公开(公告)号：US4583110A

公开(公告)日：1986-04-15

申请号：US620591

申请日：1984-06-14

申请人： Thomas N. Jackson ,  Peter D. Kirchner ,  George D. Pettit ,  Jerry M. P. Woodall

发明人： Thomas N. Jackson ,  Peter D. Kirchner ,  George D. Pettit ,  Jerry M. P. Woodall

IPC分类号： H01L29/41 ,  H01L21/28 ,  H01L21/285 ,  H01L29/43 ,  H01L29/45 ,  H01L23/48 ,  H01L29/167

CPC分类号： H01L29/452 ,  H01L21/28575 ,  Y10S148/084 ,  Y10S148/14 ,  Y10S438/915

摘要： A 10.sup.-6 ohm cm.sup.2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5.times.10.sup.19 /cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level condition so that an enhanced surface donor concentration occurs.

摘要翻译： 通过形成20-50埃的深表面区域，净供体密度高于5×1019 / cc，提供10-6欧姆的欧姆接触。 将Si或Ge的两性掺杂剂掺入固定的费米能级条件下，从而发生增强的表面供体浓度。

公开(公告)号：US4542577A

公开(公告)日：1985-09-24

申请号：US582695

申请日：1984-02-23

申请人： Thomas N. Jackson

发明人： Thomas N. Jackson

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/302

CPC分类号： H01L21/28 ,  H01L21/2815

摘要： A submicron conductor is formed by placing a metal member over an insulator both terminating at a common defined edge. An angularly deposited metal against the edge provides a broad metal conductor attached along the entire edge of a thin metal member which is positioned on the substrate on a narrow line with the width defined by the horizontal component of the angular deposition. A removal operation removes with respect to the vertical component of the angular deposition the excess angularly deposited metal and leaves a vertical, very narrow metal conductor having a horizontal metal over the dielectric in electrical and supporting contact along the entire length. The asymmetry of the conductor provides field effect transistor advantages.

摘要翻译： 通过将金属构件放置在绝缘体上而形成亚微米导体，两者终止于公共限定的边缘。 抵靠边缘的角度沉积的金属提供沿着薄金属构件的整个边缘附着的宽金属导体，薄金属构件位于具有由角度沉积的水平分量限定的宽度的窄线上的基板上。 去除操作相对于角度沉积的垂直分量移除过量的角度沉积的金属，并且沿着整个长度在电气和支撑接触中离开具有水平金属的垂直非常窄的金属导体。 导体的不对称性提供了场效应晶体管的优势。

公开(公告)号：US4532533A

公开(公告)日：1985-07-30

申请号：US372359

申请日：1982-04-27

申请人： Thomas N. Jackson ,  Jerry M. Woodall

发明人： Thomas N. Jackson ,  Jerry M. Woodall

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/338 ,  H01L29/205 ,  H01L29/76 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812 ,  H01L29/34

CPC分类号： H01L29/7606 ,  H01L29/205 ,  Y10S148/084 ,  Y10S148/14

摘要： A ballistic conduction majority carrier type semiconductor device structure can be fabricated with a built-in difference in barrier height between the emitter and collector interfaces by employing surface fermi level pinning in a crystalline structure with three copolanar regions of different semiconductor materials. The center region between the interfaces with the external zones of the structure has a thickness of the order of the mean free path of an electron. The materials of the external regions are such that there is a mismatch between the crystal spacing of the external regions and the central region which causes the fermi level of the material in the central zone to be pinned in the region of the conduction band at the interfaces with the external regions and the material of the external regions is selected so that the surface fermi level is pinned in the forbidden region. A monocrystalline structure having an emitter region of GaAs, a central or base region of InAs or W 100 .ANG. to 500 .ANG. thick, and a collector region of GaInAs provides switching in the range of 10.sup.-12 seconds.

摘要翻译： 可以通过在具有不同半导体材料的三个Copolanar区域的晶体结构中采用表面费米能级钉扎来制造具有内部的发射极和集电极界面之间的势垒高度的弹道导电多数载流子型半导体器件结构。 与结构的外部区域的界面之间的中心区域具有电子的平均自由程的顺序的厚度。 外部区域的材料使得外部区域的晶体间距和中心区域之间存在不匹配，这导致中心区域中的材料的费米能级被固定在界面处的导带区域中 选择外部区域和外部区域的材料，使得表面费米能级被固定在禁止区域中。 具有GaAs的发射极区域，InAs的中心或基极区域或500厚的W 100 ANGSTROM的GaONAs的集电极区域的单晶结构提供10-12秒的切换。

公开(公告)号：US4472206A

公开(公告)日：1984-09-18

申请号：US440655

申请日：1982-11-10

申请人： Rodney T. Hodgson ,  Thomas N. Jackson ,  Hans S. Rupprecht ,  Jerry M. Woodall

发明人： Rodney T. Hodgson ,  Thomas N. Jackson ,  Hans S. Rupprecht ,  Jerry M. Woodall

IPC分类号： C30B29/40 ,  C30B31/22 ,  H01L21/265 ,  H01L21/314 ,  H01L21/324 ,  H01L21/477

CPC分类号： H01L21/3245 ,  H01L21/26546 ,  H01L21/314

摘要： Ion implanted impurity activation in a multi-element compound semiconductor crystal such as gallium arsenide, GaAs, over a broad integrated circuit device area, is accomplished using a short time anneal, in the proximity of a uniform concentration of the most volatile element of said crystal, in solid form, over the broad integrated circuit device area surface. A GaAs integrated circuit wafer having ion implanted impurities in the surface for an integrated circuit is annealed in the vicinity of 800.degree.-900.degree. C. for a time of the order of 1-20 seconds in the proximity of a uniform layer of solid arsenic.

摘要翻译： 在广泛的集成电路器件区域上的多元素化合物半导体晶体（例如砷化镓，GaAs）中的离子注入杂质活化是通过使用短时间退火在所述晶体的最易挥发元素的均匀浓度附近 以固体形式，在广泛的集成电路器件区域表面上。 在集成电路表面上具有离子注入杂质的GaAs集成电路晶片在800-900℃附近在均匀的固体砷层附近退火约1-20秒的时间 。