公开(公告)号：US20120217198A1

公开(公告)日：2012-08-30

申请号：US13405531

申请日：2012-02-27

申请人： Feng Chen ,  Linping Wu

发明人： Feng Chen ,  Linping Wu

IPC分类号： B01D29/00

CPC分类号： F25B43/003

摘要： Disclosed herein is a bi-flow filter drier including a cartridge and a filter core located inside the cartridge. A filter sheet is provided at each of two ends of the filter core. The bi-flow filter drier further includes at least one intermediate filter sheet positioned between the cartridge and the filter core. In the bi-flow filter drier of the application, the refrigerant flows into the filter core after being filtered by the intermediate filter sheet, and flows through the center hole of the filter core towards the filter sheet at one end of the filter core, and then flows out of the filter drier after being re-filtered. This bi-flow filter drier allows the refrigerant to pass through the filter sheets twice, and the filtration capacity and the filtration precision are improved. The intermediate filter sheet may protect the filter core to prolong the service life thereof.

摘要翻译： 本文公开了一种双流过滤干燥器，其包括位于筒内的筒和滤芯。 在过滤芯的两端的每一端设置有过滤片。 双流过滤干燥器还包括位于盒和过滤芯之间的至少一个中间过滤片。 在本申请的双流过滤干燥器中，制冷剂在被中间过滤片过滤后流入过滤芯，并且在过滤芯的一端通过过滤芯的中心孔流向过滤片， 然后在重新过滤后从过滤干燥器中流出。 该双流过滤器干燥器允许制冷剂通过过滤板两次，并且提高了过滤能力和过滤精度。 中间过滤片可以保护过滤芯以延长其使用寿命。

公开(公告)号：US20120087861A1

公开(公告)日：2012-04-12

申请号：US13271118

申请日：2011-10-11

申请人： Roger Nitsch ,  Feng Chen ,  Jan Grimm ,  Jean-Luc Baeriswyl ,  Christoph Hock

发明人： Roger Nitsch ,  Feng Chen ,  Jan Grimm ,  Jean-Luc Baeriswyl ,  Christoph Hock

IPC分类号： A61K51/10 ,  C12N15/13 ,  C12N15/63 ,  C12N1/21 ,  C12N1/19 ,  C12N5/10 ,  C12P21/08 ,  C12N9/96 ,  A61K39/395 ,  C40B30/04 ,  G01N33/566 ,  A61K49/16 ,  A61K49/00 ,  A61P25/28 ,  A61P25/16 ,  A61P25/00 ,  C07K16/18

CPC分类号： C07K16/18 ,  A61K39/3955 ,  A61K2039/505 ,  C07K14/47 ,  C07K14/4711 ,  C07K2317/10 ,  C07K2317/21 ,  C07K2317/24 ,  C07K2317/34 ,  C07K2317/41 ,  C07K2317/52 ,  C07K2317/56 ,  C07K2317/565 ,  C07K2317/90 ,  C07K2317/92 ,  G01N33/6896 ,  G01N2333/47 ,  G01N2800/56

摘要： Provided are novel human tau-specific antibodies as well as fragments, derivatives and variants thereof as well as methods related thereto. Assays, kits, and solid supports related to antibodies specific for tau are also disclosed. The antibody, immunoglobulin chain(s), as well as binding fragments, derivatives and variants thereof can be used in pharmaceutical and diagnostic compositions for tau targeted immunotherapy and diagnosis, respectively.

摘要翻译： 提供新的人tau特异性抗体以及其片段，衍生物和变体以及与之相关的方法。 还公开了与特异于tau的抗体相关的测定，试剂盒和固体支持物。 抗体，免疫球蛋白链以及其结合片段，衍生物和变体可分别用于tau靶向免疫治疗和诊断的药物和诊断组合物中。

公开(公告)号：US08039056B2

公开(公告)日：2011-10-18

申请号：US12019848

申请日：2008-01-25

申请人： Hirokazu Hasegawa ,  Mikihito Takenaka ,  Feng Chen ,  Hiroshi Yoshida

发明人： Hirokazu Hasegawa ,  Mikihito Takenaka ,  Feng Chen ,  Hiroshi Yoshida

IPC分类号： G11B5/73 ,  B05D3/02 ,  B44C1/22

CPC分类号： G11B5/855 ,  B05D1/34 ,  B05D3/0254 ,  B05D3/0493 ,  B05D5/00 ,  G03F7/0002 ,  Y10T428/269

摘要： A polymer thin film in which cylindrical phases are distributed in a continuous phase and are oriented in a pass-through-direction of the film includes at least: a first block copolymer including at least a block chain A1, as a component of the continuous phase, composed of polymerized monomers a1, and a block chain B1, as a component of the cylindrical phases, composed of polymerized monomers b1; and a second block copolymer including at least a block chain A2, as a component of the continuous phase, composed of polymerized monomers a2, and a block chain B2, as a component of the cylindrical phases, composed of polymerized monomers b2, with the second copolymer having a degree of polymerization different from that of the first copolymer. A film thickness of the polymer thin film and an average center distance between adjacent cylindrical phases have a relation represented by a predetermined expression.

摘要翻译： 一种聚合物薄膜，其中圆柱相分布在连续相中并且在膜的通过方向上取向至少包括：至少包含作为连续相的组分的嵌段链A1的第一嵌段共聚物 由聚合单体a1组成的嵌段链B1和由聚合单体b1组成的圆柱相的组分; 和作为连续相的组分的至少一种链段A2的第二嵌段共聚物，由作为由聚合单体b2组成的圆柱相的组分的聚合单体a2和嵌段链B2组成，第二嵌段链A2与第二嵌段链A2 共聚物，其聚合度与第一共聚物的聚合度不同。 聚合物薄膜的膜厚和相邻圆柱相之间的平均中心距离具有由预定表达式表示的关系。

公开(公告)号：US07956935B2

公开(公告)日：2011-06-07

申请号：US11104515

申请日：2005-04-13

申请人： Feng Chen

发明人： Feng Chen

IPC分类号： H04N5/44

CPC分类号： H04N5/4403 ,  H04N5/50 ,  H04N21/42208 ,  H04N21/4221 ,  H04N21/4222 ,  H04N21/4263 ,  H04N21/4383 ,  H04N21/482 ,  H04N21/485 ,  H04N21/84 ,  H04N2005/4412 ,  H04N2005/4425

摘要： An example method and device for controlling a controllable device involves using a control device comprising a numeric keypad and a delimiter key. Control operations for the controllable device are respectively associated with digits of the numeric keypad and one of the control operations is initiated by pressing the delimiter key followed by the digit key associated with the one control operation. Control operations include by way of example channel tuning operations for a television, input selection operations for a television and menu screen selections.

摘要翻译： 用于控制可控设备的示例性方法和设备涉及使用包括数字小键盘和定界符键的控制设备。 可控设备的控制操作分别与数字小键盘的数字相关联，并且通过按下分隔符键和跟一个控制操作相关的数字键来启动控制操作之一。 控制操作包括例如电视的频道调谐操作，用于电视的输入选择操作和菜单屏幕选择。

公开(公告)号：US20100273327A1

公开(公告)日：2010-10-28

申请号：US12829119

申请日：2010-07-01

申请人： Lana Hiului Chan ,  Feng Chen ,  Karl B. Levy

发明人： Lana Hiului Chan ,  Feng Chen ,  Karl B. Levy

IPC分类号： H01L21/3205

CPC分类号： C23C16/0281 ,  C23C16/02 ,  C23C16/06 ,  C23C16/45523 ,  H01L21/28562 ,  H01L21/32051

摘要： Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.

摘要翻译： 提供了改善低电阻率钨膜的均匀性和粘附性的方法。 通过在沉积钨体层之前将钨成核层暴露于一系列脉冲中的还原剂形成低电阻率钨膜。 根据各种实施例，该方法包括以不同的流速，不同的脉冲时间和不同的间隔时间来减少代理脉冲。

公开(公告)号：US07773582B2

公开(公告)日：2010-08-10

申请号：US11265379

申请日：2005-11-02

申请人： Lawrence Joseph Smith ,  John David Doyle ,  Feng Chen ,  Luis Zamora

发明人： Lawrence Joseph Smith ,  John David Doyle ,  Feng Chen ,  Luis Zamora

IPC分类号： H04L12/66

CPC分类号： H04L29/06027 ,  H04L65/103 ,  H04L65/104 ,  H04L65/1043

摘要： A method, apparatus and computer program product for performing dynamic Voice Over Internet Protocol (VOIP) endpoint mapping is presented. At least one on net endpoint of a VOIP call is determined. An endpoint data structure is used to store, for each on net endpoint of the call, a key and at least one of an Internet Protocol (IP) address of the end point, a phone number associated with the endpoint, and/or a display name associated with the endpoint. The endpoint data structure is used to correlate call legs across a network. Heuristics of the VOIP call are determined, the heuristics including information relating to the main source call leg and the main destination call leg.

摘要翻译： 提出了一种用于执行动态语音互联网协议（VOIP）端点映射的方法，装置和计算机程序产品。 确定VOIP呼叫的至少一个净端点。 端点数据结构用于为呼叫的每个净端点存储密钥和终端的互联网协议（IP）地址，与端点相关联的电话号码和/或显示器中的至少一个 与端点关联的名称。 端点数据结构用于关联网络中的呼叫支路。 确定VOIP呼叫的启发式，启发式包括与主源呼叫支路和主目的地呼叫支路相关的信息。

公开(公告)号：US07772114B2

公开(公告)日：2010-08-10

申请号：US11951236

申请日：2007-12-05

申请人： Lana Hiului Chan ,  Feng Chen ,  Karl B. Levy

发明人： Lana Hiului Chan ,  Feng Chen ,  Karl B. Levy

IPC分类号： H01L21/443

CPC分类号： C23C16/0281 ,  C23C16/02 ,  C23C16/06 ,  C23C16/45523 ,  H01L21/28562 ,  H01L21/32051

摘要： Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.

摘要翻译： 提供了改善低电阻率钨膜的均匀性和粘附性的方法。 通过在沉积钨体层之前将钨成核层暴露于一系列脉冲中的还原剂形成低电阻率钨膜。 根据各种实施例，该方法包括以不同的流速，不同的脉冲时间和不同的间隔时间来减少代理脉冲。

公开(公告)号：US20100159694A1

公开(公告)日：2010-06-24

申请号：US12407541

申请日：2009-03-19

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/285 ,  B05C11/00

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US07741719B2

公开(公告)日：2010-06-22

申请号：US12235784

申请日：2008-09-23

申请人： Dong Sheng Liu ,  Cing Ge Lim ,  Subbiah Chettiar Mahadevan ,  Feng Chen

发明人： Dong Sheng Liu ,  Cing Ge Lim ,  Subbiah Chettiar Mahadevan ,  Feng Chen

IPC分类号： H01L23/48

CPC分类号： H01L21/7684 ,  H01L21/3212 ,  Y10S438/926

摘要： An integrated circuit system comprised by forming a first region, a second region and a third region within a dielectric over a substrate. The first region includes tungsten plugs. The second region is formed adjacent at least a portion of the perimeter of the first region and the third region is formed between the first region and the second region. An opening is formed in the third region and a material is deposited within the opening for preventing erosion of the first region.

摘要翻译： 一种集成电路系统，包括在衬底之内的电介质内形成第一区域，第二区域和第三区域。 第一个区域包括钨丝塞。 第二区域形成在第一区域的周边的至少一部分附近，第三区域形成在第一区域和第二区域之间。 在第三区域中形成开口，并且在开口内沉积材料以防止第一区域的侵蚀。

公开(公告)号：USD617738S1

公开(公告)日：2010-06-15

申请号：US29344651

申请日：2009-10-01

申请人： Feng Chen ,  Feng Zhu ,  Kuo-Chin Lin

设计人： Feng Chen ,  Feng Zhu ,  Kuo-Chin Lin