公开(公告)号：US20230062105A1

公开(公告)日：2023-03-02

申请号：US17820962

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Yutaka FUJINO ,  Hiroyuki IKUTA ,  Hideki YUASA ,  Hirokazu UEDA

IPC: C23C16/44 ,  C23C16/511 ,  C23C16/34 ,  H01J37/32

Abstract: A film forming method includes repeatedly performing: forming a film on one substrate or consecutively on a plurality of substrates by supplying a film formation gas into a processing container while heating the substrate on a stage; cleaning an interior of the processing container by a fluorine-containing gas by setting a temperature of the stage to a first temperature at which a vapor pressure of an aluminum fluoride becomes lower than a control pressure in the processing container in a state in which the substrate is unloaded from the processing container; and performing a precoating continuously to the cleaning the interior of the processing container such that a precoat film is formed on at least a surface of the stage by setting the temperature of the stage to a second temperature at which the vapor pressure of the aluminum fluoride becomes lower than the control pressure in the processing container.

公开(公告)号：US20160189963A1

公开(公告)日：2016-06-30

申请号：US14976456

申请日：2015-12-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yuuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01L21/225

CPC classification number: H01L21/2236 ,  H01L21/2256 ,  H01L29/66803

Abstract: Disclosed is a method of performing doping by implanting a dopant to a processing target substrate. First, in an oxide film forming step, an oxide film is formed on the processing target substrate prior to performing a doping treatment. In addition, after the oxide film is formed on the processing target substrate, a plasma doping treatment is performed from a top of the oxide film after the oxide film forming step.

Abstract translation: 公开了通过将掺杂剂注入到处理目标衬底来进行掺杂的方法。 首先，在氧化膜形成工序中，在进行掺杂处理之前，在处理对象基板上形成氧化膜。 另外，在处理对象基板上形成氧化膜之后，在氧化膜形成工序之后，从氧化膜的顶部进行等离子体掺杂处理。

公开(公告)号：US20150318220A1

公开(公告)日：2015-11-05

申请号：US14700851

申请日：2015-04-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuuki KOBAYASHI ,  Hirokazu UEDA ,  Kohei YAMASHITA ,  Peter L.G. VENTZEK

IPC: H01L21/66 ,  H01L21/265 ,  H01J37/317 ,  G01J3/443 ,  H01L21/67

CPC classification number: G01J3/443 ,  H01J37/3171 ,  H01J37/32192 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/67 ,  H01L21/67253 ,  H01L22/10

Abstract: There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an OES (Optical Emission Spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the OES.

Abstract translation: 提供了一种等离子体处理装置，其包括：处理室，其中装载目标基板并使用包含用作掺杂剂的元素的气体的等离子体将掺杂剂注入其中; 壁探针，被配置为测量对应于在所述处理室内产生的等离子体中的带电粒子的密度的电压变化; 被配置为测量存在于等离子体中的掺杂剂的发光强度的OES（发射光谱仪）; 以及计算单元，被配置为基于在所述壁探针获得的测量结果和在所述OES获得的测量结果来计算注入到所述目标衬底中的掺杂剂的剂量。

公开(公告)号：US20150187582A1

公开(公告)日：2015-07-02

申请号：US14582417

申请日：2014-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yasuhiro SUGIMOTO ,  Masahiro HORIGOME ,  Yuuki KOBAYASHI

IPC: H01L21/223 ,  H01J37/317 ,  H01L21/324

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32412 ,  H01L29/66803

Abstract: Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.

Abstract translation: 公开了一种等离子体掺杂装置和等离子体掺杂方法，用于通过将掺杂剂离子注入到处理目标衬底中来对处理目标衬底进行掺杂。 等离子体掺杂方法包括通过使用微波产生等离子体在保持在处理容器内的保持单元上的处理目标衬底上进行等离子体掺杂处理。 等离子体掺杂方法还包括对经过等离子体掺杂处理的处理对象基板进行的退火处理。