公开(公告)号：US06585910B1

公开(公告)日：2003-07-01

申请号：US09125440

申请日：1999-03-26

申请人： Hirohisa Kikuyama ,  Masayuki Miyashita ,  Tatsuhiro Yabune ,  Tadahiro Ohmi

发明人： Hirohisa Kikuyama ,  Masayuki Miyashita ,  Tatsuhiro Yabune ,  Tadahiro Ohmi

IPC分类号： C09K1308

CPC分类号： H01L21/31111 ,  H01L21/31144

摘要： An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.

摘要翻译： 可以在不损害抗蚀剂图案的情况下高速蚀刻绝缘膜的蚀刻处理剂，在半导体制造工艺中的绝缘膜蚀刻工艺被单晶片处理蚀刻处理方法代替时，提供逼真的生产量，并且防止表面上的粗糙度 蚀刻后的半导体。

公开(公告)号：US06514474B1

公开(公告)日：2003-02-04

申请号：US09600231

申请日：2000-09-05

申请人： Hirohisa Kikuyama ,  Toshirou Fukudome ,  Masahide Waki ,  Hirofumi Yazaki

发明人： Hirohisa Kikuyama ,  Toshirou Fukudome ,  Masahide Waki ,  Hirofumi Yazaki

IPC分类号： C01B2510

CPC分类号： C01D15/005

摘要： A method of purifying lithium hexafluorosphate that allows to purify lithium hexafluorophosphate, useful as lithium secondary cell electrolyte, organic synthesis medium or the like, to an extremely high purity is provided. Lithium hexafluorophosphate containing harmful impurities such as oxyfluoride, lithium fluoride is purified by adding phosphoric chloride. The purification is performed in the presence of phosphoric chloride and hydrogen fluoride of the quantity equal or superior to the equivalent amount for reacting them, and then by converting lithium fluoride to lithium hexafluorophosphate with generated phosphor pentafluoride.

摘要翻译： 提供了一种纯化六氟磷酸锂的方法，其可以将用作锂二次电池电解质，有机合成介质等的六氟磷酸锂纯化至极高纯度。 含有氟化氢，氟化锂等有害杂质的六氟磷酸锂通过加入磷酸盐进行纯化。 在磷酸盐和氟化氢存在下进行纯化，其量等于或优于反应它们的当量，然后通过用产生的五氟化磷将氟化锂转化为六氟磷酸锂。

公开(公告)号：US5277835A

公开(公告)日：1994-01-11

申请号：US50737

申请日：1993-04-21

申请人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama

发明人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama

IPC分类号： C09K13/08 ,  H01L21/306 ,  H01L21/3105 ,  B05D1/00

CPC分类号： H01L21/3105 ,  C09K13/08 ,  H01L21/02063

摘要： A surface treatment agent containing a solution of hydrogen fluoride, ammonium fluoride and water, the solution containing less than 8 weight % of hydrogen fluoride (HF) and less than 15 weight % of ammonium fluoride (NH.sub.4 F).

摘要翻译： 含有氟化氢，氟化铵和水的溶液的表面处理剂，含有少于8重量％的氟化氢（HF）和小于15重量％的氟化铵（NH 4 F）的溶液。

公开(公告)号：US20070215835A1

公开(公告)日：2007-09-20

申请号：US10488036

申请日：2002-09-02

申请人： Hirohisa Kikuyama ,  Masayuki Miyashita ,  Tatsuhiro Yabune ,  Tadahiro Ohmi

发明人： Hirohisa Kikuyama ,  Masayuki Miyashita ,  Tatsuhiro Yabune ,  Tadahiro Ohmi

IPC分类号： C09K13/08

CPC分类号： C03C15/00 ,  C03C15/02

摘要： A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.

摘要翻译： 一种表面处理溶液，用于微细加工含有用于构建液晶或有机电致发光的平板显示装置的多种成分的玻璃基板，而不会引起晶体析出和表面粗糙度。 除了氢氟酸（HF）外，本发明的蚀刻溶液还含有至少一种其解离常数大于HF的酸。 调节溶液中酸的浓度。

公开(公告)号：US20070029519A1

公开(公告)日：2007-02-08

申请号：US10487770

申请日：2002-08-26

申请人： Hirohisa Kikuyama ,  Tatsuhiro Yabune ,  Masayuki Miyashita ,  Tadahiro Ohmi

发明人： Hirohisa Kikuyama ,  Tatsuhiro Yabune ,  Masayuki Miyashita ,  Tadahiro Ohmi

IPC分类号： C09K13/00

CPC分类号： C03C15/00

摘要： A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.

摘要翻译： 用于精细加工含有多种成分的玻璃基板的表面处理溶液用于构建基于液晶或有机电致发光的平板显示装置，而不会引起晶体沉淀和/或增加表面粗糙度。 除氢氟酸（HF）和氟化铵（NH 4 F F）外，本发明的蚀刻溶液含有至少一种其解离常数大于HF的酸。 可以有利地调节溶液中酸的浓度以最大化蚀刻速率。

公开(公告)号：US20050115364A1

公开(公告)日：2005-06-02

申请号：US10505803

申请日：2003-02-27

申请人： Hirohisa Kikuyama ,  Masahide Waki ,  Hiroto Izumi ,  Hirofumi Yazaki ,  Kenji Aoki ,  Shinji Hashiguchi ,  Masatsugu Kawawaki ,  Yuko Murakami

发明人： Hirohisa Kikuyama ,  Masahide Waki ,  Hiroto Izumi ,  Hirofumi Yazaki ,  Kenji Aoki ,  Shinji Hashiguchi ,  Masatsugu Kawawaki ,  Yuko Murakami

IPC分类号： C01G33/00 ,  C01G35/00 ,  C22B3/26 ,  C22B34/24 ,  C22B34/20

CPC分类号： C22B3/0005 ,  C01G33/00 ,  C01G33/003 ,  C01G35/00 ,  C01G35/003 ,  C22B34/24 ,  Y02P10/234

摘要： An object of the present invention is to provide a method for purifying a highly pure niobium compound and/or tantalum compound, the method enabling the purification of a highly pure niobium compound and tantalum compound in a simplified manner at a low cost. The object is met by providing a method comprising adding an organic solvent to an aqueous solution containing a niobium compound and/or tantalum compound together with impurities, and then performing extraction via the solution. A niobium compound and/or tantalum compound dissolved in a solution is allowed to precipitate, and said aqueous solution is obtained by dissolving the precipitate in water.

摘要翻译： 本发明的目的是提供一种纯化铌化合物和/或钽化合物的纯化方法，该方法能够以低成本简便地纯化铌化合物和钽化合物。 通过提供一种包括向含有铌化合物和/或钽化合物以及杂质的水溶液中加入有机溶剂，然后通过溶液进行萃取的方法来满足目的。 溶解在溶液中的铌化合物和/或钽化合物析出，所述水溶液通过将沉淀物溶解在水中得到。

公开(公告)号：US06699603B1

公开(公告)日：2004-03-02

申请号：US09857117

申请日：2001-12-26

申请人： Tadahiro Ohmi ,  Hirohisa Kikuyama ,  Masayuki Miyashita ,  Hiroto Izumi ,  Takanobu Kujime

发明人： Tadahiro Ohmi ,  Hirohisa Kikuyama ,  Masayuki Miyashita ,  Hiroto Izumi ,  Takanobu Kujime

IPC分类号： C23C806

CPC分类号： C23C8/80 ,  C23C8/08 ,  Y10T428/31678

摘要： A stainless steel with a passive state fluorinated film formed thereon, which is easy to construct and does not produce particles even when it is welded, and a device using the same. The stainless steel does not cause leakage even when said film is formed on a sealing surface of a joint and a valve seat surface. The stainless steel is characterized in that at least a part of the surface coated with a passive state fluorinated film not thicker than 190Å consisting of a metal fluoride as a main component.

摘要翻译： 其上形成有被动状态氟化膜的不锈钢，即使在被焊接时也容易构造并且不产生颗粒，以及使用其的装置。 即使所述膜形成在接头的密封面和阀座面上，不锈钢也不会引起泄漏。 不锈钢的特征在于，涂覆有不大于190的被动状态氟化膜的表面的至少一部分由以金属氟化物为主要成分组成。

公开(公告)号：US5149378A

公开(公告)日：1992-09-22

申请号：US613730

申请日：1990-11-21

申请人： Tadahiro Ohmi ,  Nobuhiro Miki ,  Matagoroh Maeno ,  Hirohisa Kikuyama

发明人： Tadahiro Ohmi ,  Nobuhiro Miki ,  Matagoroh Maeno ,  Hirohisa Kikuyama

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285

CPC分类号： H01L21/28556 ,  C23C16/14 ,  C23C16/4402 ,  C23C16/4404

摘要： A tungsten film forming apparatus includes a reaction chamber, means for introducing WF.sub.6 into said reaction chamber, and means for introducing H.sub.2 gas into said reaction chamber, wherein at least the portion of at least said reaction chamber is made of the metal material whose surface is covered with the fluorinated paasivation film mainly consisting of the almost stoichiometric metal fluoride. It becomes possible to form a high quality tungsten film at a low substrate temperature by use of said tungsten film forming apparatus.

公开(公告)号：US5100495A

公开(公告)日：1992-03-31

申请号：US682412

申请日：1991-04-08

申请人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama ,  Matagoro Maeno

发明人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama ,  Matagoro Maeno

IPC分类号： C23F1/08 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01J37/3244 ,  C23F1/08 ,  H01L21/02049 ,  H01L21/02063 ,  H01L21/31116

摘要： Dry etching apparatus composed of any of metal, silica, ceramic or combination thereof with a processing chamber in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator, the processing chamber being connected to the diluted anhydrous hydrogen fluoride gas generator through a pipe line of stainless steel or nickel. There is also disclosed a dry-etching method with the dry-etching apparatus, and a diluted anhydrous hydrogen gas generator used in the dry-etching apparatus and dry-etching method.

公开(公告)号：US5073232A

公开(公告)日：1991-12-17

申请号：US454575

申请日：1989-12-21

申请人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama ,  Matagoro Maeno

发明人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama ,  Matagoro Maeno

IPC分类号： C23F1/08 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01J37/3244 ,  C23F1/08 ,  H01L21/02049 ,  H01L21/02063 ,  H01L21/31116

摘要： Disclosed is a dry-etching apparatus composed of any of metal, silica, ceramic or combination thereof including a processing chamber in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator, the processing chamber being connected to the diluted anhydrous hydrogen fluoride gas generator through a pipe line of such metal as stainless steel or nickel. There is also provided according to the invention a dry-etching method with the dry-etching apparatus, a cooled anhydrous hydrogen fluoride gas source and a diluted anhydrous hydrogen gas generator used in the dry-etching apparatus and dry-etching method.