Abstract:
A coupling structure for a rotation rate sensor apparatus, having at least one first oscillating mass; and having a first frame, surrounding the first oscillating mass, to which the first oscillating mass is coupled; the first frame encompassing four angle elements, each of which angle elements has at least one first limb and one second limb and is respectively coupled with the first limb and with the second limb to another adjacent angle element of the four angle elements. Also described is a further coupling structure for a rotation rate sensor apparatus, to a rotation rate sensor apparatus, to a manufacturing method for a coupling structure for a rotation rate sensor apparatus, and to a manufacturing method for a rotation rate sensor apparatus.
Abstract:
A rotation rate sensor includes a substrate having a main extension plane, and a Coriolis element movable relative to the substrate, the Coriolis element being provided to be excitable, by way of excitation means, to perform an oscillation deflection substantially parallel to the main extension plane; and the Coriolis element further being provided to be deflectable, by way of a Coriolis force acting on the Coriolis element, to perform a detectable Coriolis deflection perpendicular to the main extension plane; and the rotation rate sensor further including at least one compensation electrode that is provided for at least partial compensation, as a function of the oscillation deflection, for a levitation force acting on the Coriolis element.
Abstract:
A component has at least one MEMS element and at least one cap made of a semiconductor material. The cap, in addition to its mechanical function as a terminus of a cavity and protection of the micromechanical structure, is provided with an electrical functionality. The micromechanical structure of the MEMS element of the component is situated in a cavity between a carrier and the cap, and includes at least one structural element which is deflectable out of the component plane within the cavity. The cap includes at least one section extending over the entire thickness of the cap, which is electrically insulated from the adjoining semiconductor material in such a way that it may be electrically contacted independently from the remaining sections of the cap.
Abstract:
A yaw-rate sensor is described as having a substrate which has a main plane of extension for detecting a yaw rate about a first axis extending parallel to the main plane of extension is provided, the yaw-rate sensor having a first rotation element and a second rotation element, the first rotation element being drivable about a first axis of rotation, the second rotation element being drivable about a second axis of rotation, the first axis of rotation being situated perpendicularly to the main plane of extension, the second axis of rotation being situated perpendicularly to the main plane of extension, the first rotation element and the second rotation element being drivable in opposite directions.
Abstract:
A micromechanical sensor having at least one movably mounted measuring element which is opposite at least one stationary electrode, the electrode being situated in a first plane, and being contacted by at least one printed conductor track which is situated in a second plane. A third plane is located between the first plane and the second plane, the third plane including an electrically conductive material.
Abstract:
A device is provided for resonantly driving a micromechanical system, which includes at least one seismic mass supported by spring vibrations, at least one drive for driving the vibration of the seismic mass and at least one element that is motionally coupled to the seismic mass. Furthermore, the device includes at least one detection element for detecting a relational parameter, that changes with the vibration of the seismic mass, between the motionally coupled element and the detection element, the detection element being equipped to cause an interruption of the vibration drive when a predetermined value of the relational parameter is reached.
Abstract:
In a yaw rate sensor with a substrate having a main extent plane and with a first and second partial structure disposed parallel to the main extent plane, the first partial structure includes a first driving structure and the second partial structure includes a second driving structure, the first and second partial structure being excitable by a driving device, via the first and second driving structure, into oscillation parallel to a first axis parallel to the main extent plane, the first partial structure having a first Coriolis element and the second partial structure having a second Coriolis element, the yaw rate sensor being characterized in that the first and second Coriolis elements are displaceable by a Coriolis force parallel to a second axis, which is perpendicular to the first axis, and parallel to a third axis, which is perpendicular to the first and second axis, the second axis extending parallel to the main extent plane, and the first Coriolis element being connected to the second Coriolis element via a coupling element.
Abstract:
A micromechanical yaw rate sensor includes a substrate having a main plane of extension and two Coriolis elements. The first Coriolis element may be driven to a first vibration along a second direction which is parallel to the main plane of extension. The second Coriolis element may be driven to a second vibration which is antiparallel to the first vibration. A first deflection of the first Coriolis element and a second deflection of the second Coriolis element, in each case along a first direction which is parallel to the main plane of extension and perpendicular to the second direction, may be detected. The micromechanical sensor also has a rocker element indirectly or directly coupled to the first Coriolis element and to the second Coriolis element, which rocker element has a torsional axis essentially parallel to the second direction.
Abstract:
A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track.
Abstract:
A coupling structure for a rotation rate sensor apparatus, having at least one first oscillating mass; and having a first frame, surrounding the first oscillating mass, to which the first oscillating mass is coupled; the first frame encompassing four angle elements, each of which angle elements has at least one first limb and one second limb and is respectively coupled with the first limb and with the second limb to another adjacent angle element of the four angle elements. Also described is a further coupling structure for a rotation rate sensor apparatus, to a rotation rate sensor apparatus, to a manufacturing method for a coupling structure for a rotation rate sensor apparatus, and to a manufacturing method for a rotation rate sensor apparatus.