摘要:
A thin-film type thermal print head has a resistor layer formed over an insulative substrate, a conductor layer having a specified planar pattern overlapping the resistor layer, a portion of the resistor layer serving as a heat-emitting part which is not covered by the conductor layer, and a protective layer formed over the heat-emitting part and at least a portion of the conductor layer adjacent to the heat-emitting part. The protective layer may be formed as a conductive layer with resistance greater than that of the heat-emitting part such that static electricity which may be generated by the friction with printing paper can quickly escape to the conductor layer. The protective layer may also include a wear-resisting layer of a prior art type between the conductive layer and the conductor layer, a portion of the conductive layer being preferably connected to the conductor layer. The conductive layer is preferably a mixed layer of SiC and ZrB.sub.2 containing ZrB.sub.2 by 5-20 molar %, formed by sputtering or chemical vapor deposition and having surface resistance of 10.sup.6 -10.sup.9 .OMEGA..
摘要:
A thermal printhead according to the present invention includes an insulating head substrate (8) having an obverse surface (8a), a reverse surface (8b), a first longitudinal edge surface (8c) and a second longitudinal edge surface (8d). The surface (8a) of the head substrate (8) is formed with an array of heating dots (10a) along the first longitudinal edge surface (8c), a common electrode pattern (11) electrically connected to the array of heating dots (10a) adjacent to the first longitudinal edge surface (8c) and individual electrodes (12) extending away from the common electrode pattern (11) and being electrically connected to the respective heating dots (10a). The heating dots (10a) are selectively heated by drive elements. The common electrode pattern (11) is electrically connected to an auxiliary electrode layer (14) which covers at least the first longitudinal edge surface (8c), reverse surface (8b) and second longitudinal edge surface (8d) of the heat substrate (8).
摘要:
A method of making thermal printheads is provided which comprises the steps of: (a) preparing a master substrate having plural rows of unit head regions; (b) forming a head glaze member in each unit head region in each row so that an edge of the head glaze member of the unit head region aligned with that of the head glaze member of any other unit region in the same row; (c) half-cutting the master substrate along the edge of the head glaze member of the unit head region with a half-cutting dicing blade which has an inclined edge face for partially cutting the head glaze member to provide a glaze corner; and (d) forming an array of heating dots along the glaze corner; wherein at least one blade positioning mark is formed on the master substrate before the half-cutting step (c); and the half-cutting dicing blade is positionally set in the half-cutting step (c) by referring to the blade positioning mark.
摘要:
An optical printhead includes a light source, a light guide, and a light collecting sheet. The light guide includes a light incident surface facing the light source and a flat light emitting surface extending in a primary scanning direction. The light collecting sheet faces the light emitting surface of the light guide and allows the passage of light emitted from the light emitting surface. The collecting sheet includes a prism layer formed with a plurality of ridges extending parallel to each other, and a base layer laminated on the prism layer. Diffused light rays emitted from the light emitting surface of the light guide pass through the light collecting sheet to become parallel rays.
摘要:
An optical printhead includes a light source, a light guide, and a light collecting sheet. The light guide includes a light incident surface facing the light source and a flat light emitting surface extending in a primary scanning direction. The light collecting sheet faces the light emitting surface of the light guide and allows the passage of light emitted from the light emitting surface. The collecting sheet includes a prism layer formed with a plurality of ridges extending parallel to each other, and a base layer laminated on the prism layer. Diffused light rays emitted from the light emitting surface of the light guide pass through the light collecting sheet to become parallel rays.
摘要:
A plurality of first contact holes reaching an n+-type semiconductor area used as the source of a MISFET employed in a logic-DRAM mixture LSI and a plurality of second contact holes reaching another n+-type semiconductor area used as the drain of the MISFET are bored through an insulation layer created over a gate electrode of the MISFET. A conductive film on the same layer as a bit line shunts the n+-type semiconductor area used as the source through the first contact holes. Another conductive film shunts the n+-type semiconductor area used as the drain through the second contact holes.
摘要:
A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the U-shaped grooves by thermal oxidation simultaneously with the formation of a silicon oxide film used to form isolation regions between each collector contact region and base region. No separate step is needed for forming the silicon oxide film between the collector contact region and the base region. The thickness of the silicon oxide film can be controlled, and has a sufficient thickness even at its two edges, i.e., at its boundaries with the U-shaped grooves, so that the bipolar transistors exhibit good electrical characteristics. Namely, the collector resistance thereof does not increase, and the breakdown voltage at the pn junction between the collector region and the base region does not decrease. The U-shaped grooves can each comprise narrow and deep sub-grooves, with thick oxide films formed on the surfaces of the sub-grooves and a thick oxide film formed on a surface of an area between the sub-grooves, and with wiring formed on the oxide on the area between the sub-grooves.
摘要:
A semiconductor integrated circuit device is provided with polycrystalline silicon filling U-grooves etched in a semiconductor substrate to form isolation regions which prevent any short-circuiting between the polycrystalline silicon and electrodes or wiring formed on the semiconductor substrate. A silicon dioxide film is formed within the U-grooves, and a silicon nitride film and a silicon dioxide film are further formed thereon. The silicon nitride film has a high hardness which suppresses the development of crystal defects in the peripheral active regions due to the expansion of the surface of the polycrystalline silicon when it is oxidized. When the surface of the polycrystalline silicon is oxidized, the oxidation proceeds along the oxide film over the nitride film, so that the whole of the oxide film is formed thickly. Therefore, the silicon nitride film and the silicon dioxide film are provided with an increased margin against the etching used for forming contact holes.