公开(公告)号：US07513608B2

公开(公告)日：2009-04-07

申请号：US11338774

申请日：2006-01-25

申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′)face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， u =（Cc / Ca）×（Wa / Wc）（1）中的绝对值大于2的实数：<？in-line-formula description =“In-line formula”end =“lead” <？in-line-formula description =“In-line formula”end =“tail”？>其中，Cc是平面外的电介质膜的（001'）面的峰值的计数数 X射线衍射测量（这里，l'是选择的自然数，使得Cc变为最大）; Ca是In平面X射线衍射测定中的电介质膜的（h'00）面的峰值的计数数（这里，h'是选择为Cc变为最大的自然数）; Wc是外平面摇摆曲线X射线衍射测定中的电介质膜的（001'）面的峰值的半值宽度; Wa是In平面摇摆曲线X射线衍射测定中的电介质膜的（h'00）面的峰值的半值宽度。

公开(公告)号：US20060176342A1

公开(公告)日：2006-08-10

申请号：US11338774

申请日：2006-01-25

申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); WC is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， 关于电介质膜是大于2的实数：<？in-line-formula description =“In-line Formulas”end =“lead”？> u =（C C _{其中C是在平面外X射线衍射测量中电介质膜的（001'）面的峰的计数（这里，l'是 选择的自然数使得C 变得最大）; 在平面X射线衍射测量中，电介质膜的（h'00）面的峰值的计数数（这里，h'是选择的自然数，使得C 变为最大）; WC是在平面外的摇摆曲线X射线衍射测定中的电介质膜的（001'）面的峰值的半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的（h'00）面的峰值的半值宽度。}

公开(公告)号：US07059711B2

公开(公告)日：2006-06-13

申请号：US10769765

申请日：2004-02-03

申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， 关于电介质膜是大于2的实数：<？in-line-formula description =“In-line Formulas”end =“lead”？> u =（C C _{其中，C是在平面外X射线衍射测量中电介质膜的（001）面的峰值的计数（这里，l'是 选择的自然数使得C 变得最大）; 在平面X射线衍射测量中，电介质膜的（h'00）面的峰值的计数数（这里，h'是选择的自然数，使得C 变为最大）; 在平面外的摇摆曲线X射线衍射测量中，电介质薄膜的（001'）面的峰值的半值宽度是半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的（h'00）面的峰值的半值宽度。}

公开(公告)号：US07235917B2

公开(公告)日：2007-06-26

申请号：US11196260

申请日：2005-08-04

申请人： Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda

发明人： Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda

IPC分类号： H01L41/08

CPC分类号： B41J2/14233 ,  B41J2202/11 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/316

摘要： A piezoelectric member element including a piezoelectric member layer and a pair of electrode layers sandwiching the piezoelectric member layer, wherein at least three layers, which are directed in a preferential orientation to the (110) plane on the (100) plane of Si, are accumulated and the above described at least three layers include the above described piezoelectric member layer and one of the above described pair of electrode layers.

摘要翻译： 压电构件元件包括压电构件层和夹在压电构件层上的一对电极层，其中以Si的（100）面上的（110）面优先取向的至少三层为 并且上述至少三层包括上述压电构件层和上述一对电极层之一。

公开(公告)号：US20070002103A1

公开(公告)日：2007-01-04

申请号：US11515816

申请日：2006-09-06

申请人： Kiyotaka Wasa ,  Akira Unno ,  Tetsuro Fukui ,  Takanori Matsuda

发明人： Kiyotaka Wasa ,  Akira Unno ,  Tetsuro Fukui ,  Takanori Matsuda

IPC分类号： B41J2/045

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/49155

摘要： A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezo-electric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.

摘要翻译： 压电元件结构包括支撑基板和支撑在支撑基板上的压电膜，其中压电膜包含第一层，和具有锆的第二层，每个都具有钙钛矿结构，并形成为与每个 通过中间层进行其他层压，并且在薄膜形成时将温度设定为500℃以上，以提供压电膜，并且从薄膜形成温度至少至 450℃，冷却速度为30℃/分钟以上，形成。 与现有的压电薄膜相比，这样形成的压电薄膜的厚度小，但压电常数大，能够可靠地进行有效的微加工。

公开(公告)号：US07053526B2

公开(公告)日：2006-05-30

申请号：US10071095

申请日：2002-02-11

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： H01L41/08

CPC分类号： B41J2/1628 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49401

摘要： A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

公开(公告)号：US20070090730A1

公开(公告)日：2007-04-26

申请号：US11582403

申请日：2006-10-18

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： H01L41/187

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/318

摘要： To provide a film forming method capable of obtaining a high-quality perovskite type oxide thin film, piezoelectric element having a piezoelectric substance constituted of the thin film formed by the film forming method, liquid discharge head having the piezoelectric element and liquid discharge apparatus having the liquid discharge head. A method for forming a perovskite type oxide thin film having a composition expressed by (A1x, A2y A3z) (B1j, B2k, B3l, B4m B5n)Op is included, which is a film forming method having a plurality of steps for supplying a material containing the elements onto the substrate, dividing the elements A1 to A3 and B1 to B5 into a plurality of groups and supplying each material containing the elements included in the groups onto the substrate in separate steps.

摘要翻译： 为了提供能够获得高质量钙钛矿型氧化物薄膜的成膜方法，具有由通过成膜方法形成的薄膜构成的压电体的压电元件，具有压电元件的液体排出头和具有 液体排放头。 一种形成具有由（A1 ，A2＆gt; A3＆lt; z＆gt;）表示的组成的钙钛矿型氧化物薄膜的方法（B1＆ B 1，B 2，B 1，B 2，B 3，N 2，B 3，N 3， 是一种成膜方法，其具有多个步骤，用于将含有元素的材料提供到基底上，将元件A1至A3和B1至B5分成多个组，并将含有 包含在基团中的元素在单独的步骤中。

公开(公告)号：US07069631B2

公开(公告)日：2006-07-04

申请号：US11240524

申请日：2005-10-03

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： H01L17/00 ,  H01L21/00

CPC分类号： B41J2/1628 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49401

摘要： A piezoelectric structure includes a vibrational plate and a piezoelectric film. The vibrational plate includes a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials. Oxide layers sandwich the aforementioned layer. The piezoelectric film has a single orientation crystal or monocrystal structure.

摘要翻译： 压电结构包括振动板和压电膜。 振动板包括单晶材料层，多晶体材料，掺杂有与构成单晶材料的元素不同的元素的单晶材料，或掺杂有与构成多晶体的元素不同的元素的多晶材料 材料 氧化层夹着上述层。 压电薄膜具有单取向晶体或单晶结构。

公开(公告)号：US08198199B2

公开(公告)日：2012-06-12

申请号：US12526308

申请日：2008-03-05

申请人： Jumpei Hayashi ,  Takanori Matsuda ,  Tetsuro Fukui ,  Hiroshi Funakubo

发明人： Jumpei Hayashi ,  Takanori Matsuda ,  Tetsuro Fukui ,  Hiroshi Funakubo

IPC分类号： H01L21/31

CPC分类号： H01L41/0973 ,  H01L41/0815 ,  H01L41/319

摘要： There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; andforming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1−y)B  (1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3−(1−x)BO2  (2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.

摘要翻译： 公开了一种外延膜，其包括：在基板的表面上加热具有膜厚为1.0nm以上至10nm以下的SiO 2层的Si基板; 并使用由以下组成式表示的金属靶在SiO 2层上形成：yA（1-y）B（1），其中A是选自由Y和 Sc，B为Zr，y为0.03以上且0.20以下的数值，外延膜由以下组成式表示：xA 2 O 3 - （1-x）BO 2（2），其中A和B分别为 与组成式（1）的A和B相同的元素，x是0.010以上至0.035以下的数值。

公开(公告)号：US07567022B2

公开(公告)日：2009-07-28

申请号：US11582403

申请日：2006-10-18

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： H01L41/00 ,  H01L41/187

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/318

摘要： To provide a film forming method capable of obtaining a high-quality perovskite type oxide thin film, piezoelectric element having a piezoelectric substance constituted of the thin film formed by the film forming method, liquid discharge head having the piezoelectric element and liquid discharge apparatus having the liquid discharge head. A method for forming a perovskite type oxide thin film having a composition expressed by (A1x, A2y A3z) (B1j, B2k, B3l, B4m B5n)Op is included, which is a film forming method having a plurality of steps for supplying a material containing the elements onto the substrate, dividing the elements A1 to A3 and B1 to B5 into a plurality of groups and supplying each material containing the elements included in the groups onto the substrate in separate steps.

摘要翻译： 为了提供能够获得高质量钙钛矿型氧化物薄膜的成膜方法，具有由通过成膜方法形成的薄膜构成的压电体的压电元件，具有压电元件的液体排出头和具有 液体排放头。 包括具有由（A1x，A2y A3z）（B1j，B2k，B3l，B4m B5n）Op表示的组成的钙钛矿型氧化物薄膜的方法，该方法是具有用于供给材料的多个步骤的成膜方法 将元件包含在基板上，将元件A1至A3和B1至B5分成多个组，并将包含在组中的元素的每种材料分离到基板上。