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    Piezoelectric substance element, liquid discharge head utilizing the same and optical element
    2.
    发明授权
    Piezoelectric substance element, liquid discharge head utilizing the same and optical element 有权
    压电体元件，利用其的液体排出头和光学元件

    公开(公告)号：US07759845B2

    公开(公告)日：2010-07-20

    申请号：US11683100

    申请日：2007-03-07

    申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

    发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

    IPC分类号： H01L41/08

    CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

    摘要： An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

    摘要翻译： 可以提供作为光调制元件的透明度和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极。 压电体膜不含有层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

    PIEZOELECTRIC SUBSTANCE ELEMENT, LIQUID DISCHARGE HEAD UTILIZING THE SAME AND OPTICAL ELEMENT
    6.
    发明申请
    PIEZOELECTRIC SUBSTANCE ELEMENT, LIQUID DISCHARGE HEAD UTILIZING THE SAME AND OPTICAL ELEMENT 有权
    压电元件，液体放电头，使用它们和光学元件

    公开(公告)号：US20070215715A1

    公开(公告)日：2007-09-20

    申请号：US11683100

    申请日：2007-03-07

    申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

    发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

    IPC分类号： B05B1/08

    CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

    摘要： The invention is to provide an optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode; wherein the piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

    摘要翻译： 本发明提供一种作为光调制元件的透明性和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极; 其中所述压电物质膜不包含层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

    EPITAXIAL FILM, PIEZOELECTRIC ELEMENT, FERROELECTRIC ELEMENT, MANUFACTURING METHODS OF THE SAME, AND LIQUID DISCHARGE HEAD
    8.
    发明申请
    EPITAXIAL FILM, PIEZOELECTRIC ELEMENT, FERROELECTRIC ELEMENT, MANUFACTURING METHODS OF THE SAME, AND LIQUID DISCHARGE HEAD 有权
    外延膜，压电元件，电解元件，其制造方法和液体放电头

    公开(公告)号：US20100052113A1

    公开(公告)日：2010-03-04

    申请号：US12526308

    申请日：2008-03-05

    申请人： Jumpei Hayashi ,  Takanori Matsuda ,  Tetsuro Fukui ,  Hiroshi Funakubo

    发明人： Jumpei Hayashi ,  Takanori Matsuda ,  Tetsuro Fukui ,  Hiroshi Funakubo

    IPC分类号： H01L29/04 ,  H01L21/30

    CPC分类号： H01L41/0973 ,  H01L41/0815 ,  H01L41/319

    摘要： There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; andforming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1−y)B  (1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3−(1−x)BO2  (2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.

    摘要翻译： 公开了一种外延膜，其包括：在基板的表面上加热具有膜厚为1.0nm以上至10nm以下的SiO 2层的Si基板; 并使用由以下组成式表示的金属靶在SiO 2层上形成：yA（1-y）B（1），其中A是选自由Y和 Sc，B为Zr，y为0.03以上且0.20以下的数值，外延膜由以下组成式表示：xA 2 O 3 - （1-x）BO 2（2），其中A和B分别为 与组成式（1）的A和B相同的元素，x是0.010以上至0.035以下的数值。

    Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of the same, and liquid discharge head
    9.
    发明授权
    Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of the same, and liquid discharge head 有权
    外延膜，压电元件，铁电元件，其制造方法和液体排出头

    公开(公告)号：US08198199B2

    公开(公告)日：2012-06-12

    申请号：US12526308

    申请日：2008-03-05

    申请人： Jumpei Hayashi ,  Takanori Matsuda ,  Tetsuro Fukui ,  Hiroshi Funakubo

    发明人： Jumpei Hayashi ,  Takanori Matsuda ,  Tetsuro Fukui ,  Hiroshi Funakubo

    IPC分类号： H01L21/31

    CPC分类号： H01L41/0973 ,  H01L41/0815 ,  H01L41/319

    摘要： There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; andforming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1−y)B  (1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3−(1−x)BO2  (2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.

    摘要翻译： 公开了一种外延膜，其包括：在基板的表面上加热具有膜厚为1.0nm以上至10nm以下的SiO 2层的Si基板; 并使用由以下组成式表示的金属靶在SiO 2层上形成：yA（1-y）B（1），其中A是选自由Y和 Sc，B为Zr，y为0.03以上且0.20以下的数值，外延膜由以下组成式表示：xA 2 O 3 - （1-x）BO 2（2），其中A和B分别为 与组成式（1）的A和B相同的元素，x是0.010以上至0.035以下的数值。

    Piezoelectric member, piezoelectric element, and liquid discharge head and liquid discharge apparatus utilizing piezoelectric element
    10.
    发明授权
    Piezoelectric member, piezoelectric element, and liquid discharge head and liquid discharge apparatus utilizing piezoelectric element 有权
    压电元件，压电元件，以及利用压电元件的液体排出头和液体排出装置

    公开(公告)号：US07622852B2

    公开(公告)日：2009-11-24

    申请号：US12031176

    申请日：2008-02-14

    申请人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Kenichi Takeda ,  Hiroshi Funakubo ,  Hiroshi Nakaki ,  Rikyu Ikariyama ,  Osami Sakata

    发明人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Kenichi Takeda ,  Hiroshi Funakubo ,  Hiroshi Nakaki ,  Rikyu Ikariyama ,  Osami Sakata

    IPC分类号： H01L41/04 ,  H01L41/187

    CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

    摘要： The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

    摘要翻译： 本发明提供一种压电性能大的压电膜，以及压电元件，液体排出头和利用该压电元件的液体排出装置。 压电膜由具有至少四方晶系结构的<100>取向的外延氧化物形成，其中氧化物是由通式ABO 3表示的钙钛矿型复合氧化物，并且至少含有C，D和E的畴， 100]取向在晶体方向上具有相互偏离，其中区域C和D中的结构域C和D中的结构域D和E中的区域C和E以及区域D和E中的角度偏差分别为5°或更小，5 °或更小，0.3°以下，0.3°以上，域C，E以及区域D，E的[001]方向的角度偏差分别为1.0°以上1.0°以上。