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公开(公告)号：US20060132247A1
公开(公告)日：2006-06-22
申请号：US11311301
申请日：2005-12-20
IPC分类号： H03K3/03
CPC分类号： H03K3/0315 , H03K17/063
摘要： The present invention provides a current-limited oscillator capable of performing stable operation even when it is driven with a low power-supply voltage, and a charge pump circuit using the oscillator. A current-limited oscillator has a delay section that includes a plurality of series-connected inverters to delay an output pulse on the basis of a current limiting level indication signal, and the oscillator further includes at least one first transistor that limits a first current between the inverters and a high potential power supply and at least one second transistor that limits a second current between the inverters and a low potential power supply, wherein at least one of the plurality of inverters is configured as a first inverter that is connected with the first transistor and is not connected with the second transistor, and at least another of the plurality of inverters is configured as a second inverter that is not connected with the first transistor and is connected with the second transistor.
摘要翻译： 本发明提供一种即使在以低电源电压驱动的情况下也能够稳定工作的电流限制型振荡器和使用该振荡器的电荷泵电路。 限流振荡器具有延迟部分，该延迟部分包括多个串联的反相器，用于基于限流电平指示信号来延迟输出脉冲，并且该振荡器还包括至少一个第一晶体管，其限制第一电流 所述逆变器和高电位电源以及限制所述逆变器之间的第二电流和低电位电源的至少一个第二晶体管，其中所述多个逆变器中的至少一个被配置为与所述第一逆变器连接的第一逆变器 并且不与第二晶体管连接，并且多个反相器中的至少另一个被配置为不与第一晶体管连接并与第二晶体管连接的第二反相器。
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32.发明申请Internal voltage generating circuit and semiconductor integrated circuit device 有权内部电压发生电路和半导体集成电路器件公开(公告)号：US20050264347A1
公开(公告)日：2005-12-01
申请号：US11135488
申请日：2005-05-24
IPC分类号： H01L27/04 , G05F1/10 , G05F1/46 , G05F3/24 , G11C11/407 , H01L21/822
CPC分类号： G05F1/465
摘要： A voltage for reference at a voltage level higher than a target value is produced from a constant current provided from a constant current generating circuit, and is subjected to resistance division by a resistance division circuit to produce a reference voltage at the target level, and then a final reference voltage is produced by a voltage follower. An internal voltage generating circuit thus provided can generate the reference voltage having the desired voltage level with high accuracy as well as an internal voltage based on the reference voltage by controlling temperature characteristic even with a low power supply voltage.
摘要翻译： 在从恒定电流产生电路提供的恒定电流中产生高于目标值的电压电压的参考电压，并通过电阻分割电路进行电阻分割以产生目标电平的参考电压，然后 最终的参考电压由电压跟随器产生。 由此提供的内部电压产生电路即使在低电源电压下也可以通过控制温度特性，以高精度产生具有所需电压电平的基准电压以及基于参考电压的内部电压。
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公开(公告)号：US06819619B2
公开(公告)日：2004-11-16
申请号：US10356560
申请日：2003-02-03
申请人： Fukashi Morishita , Hiroshi Kato
发明人： Fukashi Morishita , Hiroshi Kato
IPC分类号： G11C514
CPC分类号： G11C11/4074 , G11C5/145 , G11C5/147 , G11C2207/104
摘要： A semiconductor memory device includes a memory cell array, a data bus, a reference voltage generating circuit, a voltage down converter, a VPP generating circuit, a circuit group, and a test circuit. The reference voltage generating circuit, voltage down converter, and VPP generating circuit include thick film transistors having a gate oxide film thickness suitable to a power supply voltage of 3.3 V. Circuits included in the circuit group include thin film transistors having a gate oxide film thickness suitable to a power supply voltage of 1.5 V. The reference voltage generating circuit, voltage down converter, and VPP generating circuit including the thick film transistors are arranged to form units corresponding to the position of the memory cell array.
摘要翻译： 半导体存储器件包括存储单元阵列，数据总线，参考电压产生电路，降压转换器，VPP生成电路，电路组和测试电路。 参考电压产生电路，降压转换器和VPP产生电路包括具有适合于3.3V的电源电压的栅极氧化膜厚度的厚膜晶体管。电路组中包括的电路包括具有栅氧化物膜厚度 适合于1.5V的电源电压。包括厚膜晶体管的参考电压产生电路，降压转换器和VPP产生电路被布置成形成与存储单元阵列的位置对应的单元。
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公开(公告)号：US06434078B1
公开(公告)日：2002-08-13
申请号：US09503719
申请日：2000-02-14
申请人： Fukashi Morishita
发明人： Fukashi Morishita
IPC分类号： G11C514
CPC分类号： G11C29/12005 , G11C5/147 , G11C29/12
摘要： In a voltage down converter, an internal power supply potential can be made equal to an external power supply potential by rendering an output driving transistor included in differential amplifiers conductive in accordance with an activation of a burn-in mode detection signal. The differential amplifiers include a comparison circuit having an output changed to an inactive state in response to the burn-in mode detection signal and a transistor setting a level of a gate voltage of the drive transistor to a fixed level.
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公开(公告)号：US06424134B1
公开(公告)日：2002-07-23
申请号：US09759321
申请日：2001-01-16
申请人： Fukashi Morishita , Akira Yamazaki , Yasuhiko Taito , Nobuyuki Fujii , Mihoko Akiyama , Mako Kobayashi
发明人： Fukashi Morishita , Akira Yamazaki , Yasuhiko Taito , Nobuyuki Fujii , Mihoko Akiyama , Mako Kobayashi
IPC分类号： G05F316
摘要： A semiconductor device includes a constant voltage generation circuit generating a constant voltage commonly to reference voltages corresponding to a plurality of internal voltages. The plurality of reference voltages are generated from the common constant voltage. Thus, the semiconductor device for generating internal voltages is implemented, which allows reduction in layout area and decrease in test time for voltage adjustment.
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公开(公告)号：US06392472B1
公开(公告)日：2002-05-21
申请号：US09954218
申请日：2001-09-18
申请人： Mako Kobayashi , Fukashi Morishita
发明人： Mako Kobayashi , Fukashi Morishita
IPC分类号： G05F1575
CPC分类号： G05F1/465
摘要： A voltage generation circuit includes a digital type VDC. The digital VDC includes a differential amplify circuit amplifying a voltage deviation of a reference voltage signal from a detection voltage signal to output the amplified voltage to a control node, a signal conversion circuit providing either an H level or an L level according to the voltage level of the control node, and an output transistor connecting an external power supply line and an internal power supply voltage node according to an output voltage of the signal conversion circuit. The center of the range of the varying voltage level of the control node is set by shifting to the logic threshold value of the signal conversion circuit.
摘要翻译： 电压产生电路包括数字型VDC。 数字VDC包括差分放大电路，放大参考电压信号与检测电压信号的电压偏差，以将放大的电压输出到控制节点，信号转换电路根据电压电平提供H电平或L电平 以及根据所述信号转换电路的输出电压连接外部电源线和内部电源电压节点的输出晶体管。 通过转移到信号转换电路的逻辑阈值来设定控制节点的变化电压电平的范围的中心。
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公开(公告)号：US06385117B1
公开(公告)日：2002-05-07
申请号：US09843691
申请日：2001-04-30
申请人： Fukashi Morishita
发明人： Fukashi Morishita
IPC分类号： G11C800
摘要： A voltage generating circuit of the present invention includes a charge pump regulator and a voltage converting circuit. Charge pump regulator receives Ext.Vcc and a ground voltage as inputs and outputs a negative voltage Vbb1. Charge pump regulator receives Int.Vcc and negative voltage Vbb1 as inputs and outputs negative voltage Vbb2(
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38.发明授权Semiconductor integrated circuit including output buffer circuit having high resistance to electro-static discharge 失效包括具有高静电放电阻力的输出缓冲电路的半导体集成电路公开(公告)号：US06323689B1
公开(公告)日：2001-11-27
申请号：US09088703
申请日：1998-06-02
申请人： Fukashi Morishita
发明人： Fukashi Morishita
IPC分类号： H01L2500
CPC分类号： H01L27/0251
摘要： The interlayer capacitance between a first metal interconnection through which a control signal is transmitted to the gate of a drive transistor and respective power supply interconnections through which a power supply potential and a ground potential is supplied is sufficiently smaller than the interlayer capacitance between an interconnection connecting a drain of the drive transistor and the first metal interconnection. The power supply interconnection is not coupled to a signal input to the gate of the drive transistor.
摘要翻译： 通过其将控制信号传输到驱动晶体管的栅极的第一金属互连和供电电位和接地电位之间的相互供电互连的层间电容充分小于互连连接 驱动晶体管的漏极和第一金属互连。 电源互连不耦合到输入到驱动晶体管的栅极的信号。
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39.发明授权Semiconductor memory device capable of increasing chip yields while maintaining rapid operation 失效半导体存储器件能够在保持快速操作的同时提高芯片产量
公开(公告)号：US5914907A
公开(公告)日：1999-06-22
申请号：US122760
申请日：1998-07-27
申请人： Mako Kobayashi , Tetsushi Tanizaki , Kazutami Arimoto , Teruhiko Amano , Takeshi Fujino , Takahiro Tsuruda , Fukashi Morishita , Mitsuya Kinoshita
发明人： Mako Kobayashi , Tetsushi Tanizaki , Kazutami Arimoto , Teruhiko Amano , Takeshi Fujino , Takahiro Tsuruda , Fukashi Morishita , Mitsuya Kinoshita
摘要： Regular memory cell arrays are arranged in divided regions in three rows and three columns except for the region located at the second row and the second column. The region located at the intersection of the second row and the second column is provided with a redundant memory cell array. The replacement operation of the regular memory cell arrays with the redundant memory cell array is provided for each memory cell block.
摘要翻译： 常规存储单元阵列被布置在除了位于第二行和第二列的区域之外的三行和三列的分割区域中。 位于第二行和第二列的交叉点的区域设置有冗余存储单元阵列。 为每个存储单元块提供具有冗余存储单元阵列的常规存储单元阵列的替换操作。
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公开(公告)号：US5877978A
公开(公告)日：1999-03-02
申请号：US710215
申请日：1996-09-13
IPC分类号： H01L21/76 , G11C11/401 , G11C11/404 , G11C11/406 , G11C11/407 , G11C11/4074 , G11C11/408 , H01L21/8242 , H01L27/108 , G11C11/24
CPC分类号： G11C11/406 , G11C11/404 , G11C11/4074 , H01L29/7841
摘要： In a dynamic random access memory, at a time of body-refresh operation, a bit-line potential VBL is set to a body-refresh-potential VBR, and the body-refresh-potential VBR is supplied to bit-line pairs via a bit-line precharging/equalizing circuit 111c, thereby the charge accumulated in the body of the n channel MOS transistor 72cb in a memory cell is drained to the bit-line pairs.
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