公开(公告)号：US20090321849A1

公开(公告)日：2009-12-31

申请号：US12302121

申请日：2007-05-23

申请人： Makoto Miyamura ,  Kiyoshi Takeuchi

发明人： Makoto Miyamura ,  Kiyoshi Takeuchi

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L29/785 ,  H01L21/823412 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/105 ,  H01L29/66772 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/78696

摘要： A semiconductor circuit has a plurality of MISFETs formed with channel films comprised of semiconductor layers on an insulation film. Channel film thicknesses of each MISFET are different. A correlation relationship is fulfilled where concentration per unit area of impurity contained in the channel films becomes larger for MISFETs of a thicker channel film thickness. As a result, it is possible to suppress deviation of threshold voltage caused by changes in channel film thickness. In this event, designed values for the channel film thicknesses of the plurality of MISFETs are preferably the same, and the difference in channel film thickness of each MISFET may depend on statistical variation from the designed values. The concentration of the impurity per unit area is proportional to the channel film thickness, or is a function that is convex downwards with respect to the channel film thickness.

摘要翻译： 半导体电路具有由绝缘膜上的半导体层构成的沟道膜形成的多个MISFET。 每个MISFET的通道膜厚度不同。 对于较厚的沟道膜厚度的MISFET，通道膜中所含的杂质的每单位面积的浓度越大，就能实现相关关系。 结果，可以抑制由沟道膜厚度的变化引起的阈值电压的偏差。 在这种情况下，多个MISFET的沟道膜厚度的设计值优选相同，并且每个MISFET的沟道膜厚度差可以取决于与设计值的统计变化。 每单位面积的杂质浓度与沟道膜厚度成比例，或者是相对于沟道膜厚度向下凸的函数。

公开(公告)号：USD597111S1

公开(公告)日：2009-07-28

申请号：US29313422

申请日：2009-01-05

申请人： Kiyoshi Takeuchi ,  Takaaki Kobayashi

设计人： Kiyoshi Takeuchi ,  Takaaki Kobayashi

公开(公告)号：US20090184387A1

公开(公告)日：2009-07-23

申请号：US12354428

申请日：2009-01-15

申请人： Kiyoshi Takeuchi

发明人： Kiyoshi Takeuchi

IPC分类号： H01L31/02 ,  H01L31/0368 ,  H01L29/788

CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

摘要： A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.

摘要翻译： 提供传感器。 传感器包括半导体层; 光电二极管，杂质掺杂多晶硅层; 和栅电极。 在半导体层中形成光电二极管。 杂质掺杂多晶硅层形成在半导体层上方。 栅电极向多晶硅层施加栅极电压。 布线层设置在半导体层的第一表面上，并且光入射到其第二表面上。

公开(公告)号：US20090159441A1

公开(公告)日：2009-06-25

申请号：US12063229

申请日：2006-12-04

申请人： Masao Marunaka ,  Takayuki Tsuchiya ,  Atsuhiro Terakura ,  Kiyoshi Takeuchi

发明人： Masao Marunaka ,  Takayuki Tsuchiya ,  Atsuhiro Terakura ,  Kiyoshi Takeuchi

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/32009 ,  H01J37/3266

摘要： A plasma film deposition system increases plasma density and improves sputtering efficiency by not generating a corner of a sheet plasma and can be operated safely by preventing occurrence of the corner in sheet plasma.The system comprises: a plasma gun capable of discharging source plasma toward a transport direction; a sheet plasma deformation chamber; a pair of magnetic field generating means provided such that same polarities thereof face each other; a film deposition chamber; and a forming magnet coil provided upstream of the pair of magnetic field generating means in the transport direction. The magnetic field generating means and the forming magnet coil generate a magnetic field whose magnetic flux densities in the transport direction are substantially constant at portions of a transport center and their vicinity portions, the portions corresponding to the forming magnet coil and the magnetic field generating means.

摘要翻译： 等离子体膜沉积系统通过不产生片状等离子体的拐角来提高等离子体密度并提高溅射效率，并且可以通过防止片状等离子体中的拐角发生而安全地操作。 该系统包括：等离子体枪，能够沿着输送方向对源极进行放电; 片状等离子体变形室; 设置成使得其相同极性彼此面对的一对磁场产生装置; 成膜室; 以及形成磁体线圈，其沿输送方向设置在所述一对磁场产生装置的上游。 磁场产生装置和成形磁体线圈产生一个磁场，其输送方向上的磁通密度在输送中心及其附近部分的部分，对应于形成磁体线圈的部分和磁场产生装置 。

公开(公告)号：US20090114665A1

公开(公告)日：2009-05-07

申请号：US11816686

申请日：2006-02-14

申请人： Kenichi Ogawa ,  Motoi Okada ,  Kenji Yamakawa ,  Kiyoshi Takeuchi

发明人： Kenichi Ogawa ,  Motoi Okada ,  Kenji Yamakawa ,  Kiyoshi Takeuchi

IPC分类号： G07F11/00 ,  B65B31/00

CPC分类号： B65G47/1421 ,  B65G27/02 ,  B65G27/32 ,  C23C14/24 ,  C23C14/243

摘要： A vibrating bowl and the like are provided which are capable of accurately counting the number of objects to be fed. The vibrating bowl (10) includes: a concave portion (10a) capable of storing therein collectivity of objects (15) to be fed; a feed passage (20) capable of feeding the objects (15) within the concave portion (10a) by vibrating the objects (15); and a step portion (26) configured to cause the objects to be ejected outside of the concave portion (10a) in a direction substantially perpendicular and downwardly oblique to a feed direction in which those objects (15) which are present in the vicinity of a termination of the feed passage (20) are fed.

摘要翻译： 提供了能够精确地计数要供给的物体的数量的振动碗等。 振动碗（10）包括：能够存储要供给的物体（15）的集合体的凹部（10a） 通过振动物体（15）能够将物体（15）供给到凹部（10a）内的供给通道（20）。 以及台阶部（26），被配置为使物体在与所述凹部（10a）附近的所述物体（15）的进给方向大致垂直向下倾斜的方向上被排出到所述凹部（10a）的外侧， 进料通道（20）的终止进料。

公开(公告)号：US20080251849A1

公开(公告)日：2008-10-16

申请号：US10593300

申请日：2005-03-22

申请人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Kiyoshi Takeuchi ,  Atsushi Ogura ,  Masayasu Tanaka ,  Masahiro Nomura ,  Koichi Takeda ,  Toru Tatsumi ,  Koji Watanabe ,  Koichi Terashima

发明人： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Kiyoshi Takeuchi ,  Atsushi Ogura ,  Masayasu Tanaka ,  Masahiro Nomura ,  Koichi Takeda ,  Toru Tatsumi ,  Koji Watanabe ,  Koichi Terashima

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/785 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/6681 ,  H01L2029/7858

摘要： A semiconductor device comprising a first semiconductor region and a second semiconductor region, (a) wherein a field effect transistor is comprised of the first semiconductor region comprising at least one semiconductor layer(s) protruding upward from a substrate, a gate electrode(s) formed via an insulating film such that the gate electrode(s) strides over the semiconductor layer(s) and source/drain regions provided in the semiconductor layer(s) on both sides of the gate electrode(s), whereby a channel region is formed in at least both sides of the semiconductor layer(s), (b) wherein the second semiconductor region comprises semiconductor layers protruding upward from the substrate and placed, at least opposing the first semiconductor region at both ends in the direction perpendicular to a channel current direction and the side surface of the semiconductor layers facing the first semiconductor region is parallel to the channel current direction.

摘要翻译： 一种包括第一半导体区域和第二半导体区域的半导体器件，（a）其中场效应晶体管由包括从衬底向上突出的至少一个半导体层的第一半导体区域，栅电极， 通过绝缘膜形成，使得栅电极跨越设置在栅电极两侧的半导体层中的半导体层和源极/漏极区，由此沟道区是 形成在所述半导体层的至少两侧，（b），其中所述第二半导体区域包括从所述衬底向上突出的半导体层，并且至少相对于与沟道垂直的方向的两端处的所述第一半导体区域相对 电流方向和面对第一半导体区域的半导体层的侧表面平行于沟道电流方向。

公开(公告)号：US20080113305A1

公开(公告)日：2008-05-15

申请号：US11968016

申请日：2007-12-31

申请人： Hiroyuki Yoneyama ,  Akira Ikeda ,  Shin Soejima ,  Kiyoshi Takeuchi ,  Naoto Matsuda

发明人： Hiroyuki Yoneyama ,  Akira Ikeda ,  Shin Soejima ,  Kiyoshi Takeuchi ,  Naoto Matsuda

IPC分类号： G03C7/30

CPC分类号： G03C1/08 ,  G03C1/0051 ,  G03C1/09 ,  G03C1/30 ,  G03C1/46 ,  G03C5/04 ,  G03C5/50 ,  G03C7/3013 ,  G03C7/3022 ,  G03C7/3041 ,  G03C7/3225 ,  G03C7/34 ,  G03C7/346 ,  G03C7/36 ,  G03C7/3825 ,  G03C7/3885 ,  G03C7/39208 ,  G03C7/4136 ,  G03C2001/03517 ,  G03C2001/03535 ,  G03C2001/03541 ,  G03C2001/03594 ,  G03C2001/0476 ,  G03C2001/093 ,  G03C2007/3025 ,  G03C2007/3027 ,  G03C2007/3043 ,  G03C2200/07 ,  G03C2200/27 ,  G03C2200/33

摘要： A silver halide color photographic light-sensitive material, having at least one each of blue-, green-, and red-sensitive emulsion layers containing yellow, magenta, and cyan couplers, respectively, on a support; wherein said blue-sensitive emulsion layer contains at least one coupler of formula (I); and wherein the light-sensitive material satisfies expression a-1) and/or b-1): wherein, Q forms a 5- to 7-membered ring with the —N═C—N(R1)-; R1 and R2 each are a substituent; m is 0 to 5; and X is a hydrogen atom, or a coupling split-off group; 0.5≦Dmax(UV)/Dmin(UV)≦1.1  a-1) wherein Dmax(UV)/Dmin(UV) is the smallest of the value in a wavelength range of 340 to 450 nm; 1300≦(B−C)/A≦20000  b-1) wherein B is yellow Dmax, C is yellow Dmin; and A is an amount mol/m2 of the coupler of formula (I).

摘要翻译： 一种卤化银彩色照相感光材料，其分别在载体上具有含有黄色，品红色和青色成色剂的蓝色，绿色和红色感光乳剂层中的至少一种; 其中所述感蓝乳剂层含有至少一种式（I）的成色剂; 并且其中所述感光材料满足表达式a-1）和/或b-1）：其中，Q与-N-C-N（R1） - 形成5-至7-元环; R1和R2各自为取代基; m为0〜5; X为氢原子或偶联分离基团; <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <= Dmax（UV）/ Dmin（UV）<= 1.1 a-1） “直线公式”end =“tail”？>其中Dmax（UV）/ Dmin（UV）是340至450nm的波长范围内的最小值; <？in-line-formula description =“In-line Formulas”end =“lead”？> 1300 <=（BC）/ A <= 20000 b-1）<？in-line-formula description =“In-line 式“end =”tail“？>其中B为黄色Dmax，C为黄色Dmin; 并且A是式（I）的成色剂的量mol / m 2。

公开(公告)号：US20080079077A1

公开(公告)日：2008-04-03

申请号：US11570037

申请日：2005-05-25

申请人： Koichi Takeda ,  Masahiro Nomura ,  Kiyoshi Takeuchi ,  Hitoshi Wakabayashi ,  Shigeharu Yamagami ,  Risho Koh ,  Koichi Terashima ,  Katsuhiko Tanaka ,  Masayasu Tanaka

发明人： Koichi Takeda ,  Masahiro Nomura ,  Kiyoshi Takeuchi ,  Hitoshi Wakabayashi ,  Shigeharu Yamagami ,  Risho Koh ,  Koichi Terashima ,  Katsuhiko Tanaka ,  Masayasu Tanaka

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L27/11 ,  H01L27/1104 ,  H01L27/1108 ,  H01L29/785 ,  Y10S257/903

摘要： A semiconductor device having SRAM cell units each comprising a pair of a first driving transistor and a second driving transistor, a pair of a first load transistor and a second load transistor, and a pair of a first access transistor and a second access transistor, wherein each of the transistors comprises a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulating film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; and the first and second driving transistors each have a channel width larger than that of at least either each of the load transistors or each of the access transistors.

摘要翻译： 一种具有SRAM单元单元的半导体器件，每个SRAM单元包括一对第一驱动晶体管和第二驱动晶体管，一对第一负载晶体管和第二负载晶体管，以及一对第一存取晶体管和第二存取晶体管，其中 每个晶体管包括从衬底平面向上突出的半导体层，在半导体层的相对侧上延伸以跨越半导体层的顶部的栅极电极，插入在栅极电极和半导体之间的栅极绝缘膜 层，以及形成在半导体层中的一对源极/漏极区域; 并且第一和第二驱动晶体管的沟道宽度均大于至少任一个负载晶体管或每个存取晶体管的沟道宽度。

公开(公告)号：US20070075372A1

公开(公告)日：2007-04-05

申请号：US10576412

申请日：2004-10-19

申请人： Koichi Terashima ,  Kiyoshi Takeuchi ,  shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Atsushi Ogura ,  Koji Watanabe ,  Toru Tatsumi ,  Koichi Takeda ,  Masahiro Nomura ,  Masayasu Tanaka

发明人： Koichi Terashima ,  Kiyoshi Takeuchi ,  shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Atsushi Ogura ,  Koji Watanabe ,  Toru Tatsumi ,  Koichi Takeda ,  Masahiro Nomura ,  Masayasu Tanaka

IPC分类号： H01L23/62

CPC分类号： H01L29/7853 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/7854 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device wherein at least the largest width of a source/drain region is larger than the width of a semiconductor region and the source/drain region has a slope having a width continuously increasing from the uppermost side to the substrate side, and a silicide film is formed in the surface of the slope.

摘要翻译： 提供了一种半导体器件，其中源极/漏极区域的至少最大宽度大于半导体区域的宽度，并且源极/漏极区域具有从最上侧到衬底侧的宽度连续增加的斜率， 并且在斜面的表面中形成硅化物膜。

公开(公告)号：US07125988B2

公开(公告)日：2006-10-24

申请号：US10669414

申请日：2003-09-25

申请人： Kiyoshi Takeuchi ,  Nobuo Seto ,  Hiroyuki Yoneyama ,  Shigeki Uehira ,  Satoshi Sano ,  Yasuhiro Shimada

发明人： Kiyoshi Takeuchi ,  Nobuo Seto ,  Hiroyuki Yoneyama ,  Shigeki Uehira ,  Satoshi Sano ,  Yasuhiro Shimada

IPC分类号： C07D285/34 ,  G03C1/06 ,  G03C7/26 ,  G03C7/32

CPC分类号： C07D417/06 ,  C07D285/24 ,  C07D417/12 ,  C07D417/14 ,  G03C7/36 ,  G03C2200/33

摘要： A yellow dye-forming coupler represented by formula (I): wherein Q represents a group of nonmetallic atoms that form a 5- to 7-membered ring in combination with the —N═C—N(R1)—; R1 and R2 each represent a substituent; R4 represents an alkyl group; m represents an integer of 0 to 4; and X represents a hydrogen atom, or a group capable of being split-off upon a coupling reaction with an oxidized product of a developing agent; and when R4 represents a primary alkyl group, R1 represents —(CH2)3O—R101 in which R101 is an alkyl group having 4 to 8 carbon atoms. A silver halide color photographic light-sensitive material having at least one yellow dye-forming coupler represented by formula (I) in at least one layer provided on a support.

摘要翻译： 由式（I）表示的形成黄色染料的成色剂：其中Q表示与-N-C-N（R 1'） - 组合形成5-至7-元环的一组非金属原子; R 1和R 2各自表示取代基; R 4表示烷基; m表示0〜4的整数， X表示氢原子或与显影剂的氧化物进行偶联反应时可分离的基团; 并且当R 4代表伯烷基时，R 1表示 - （CH 2 CH 2）3 - 或 _{101其中R 101是具有4至8个碳原子的烷基。 一种卤化银彩色摄影感光材料，其在至少一层设置在载体上的至少一种由式（I）表示的形成黄色染料的成色剂。}