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161 条记录 (耗时 0.037 秒)

    TOUCH PANEL AND DISPLAY DEVICE
    31.
    发明申请
    TOUCH PANEL AND DISPLAY DEVICE 有权
    触控面板和显示设备

    公开(公告)号：US20130076687A1

    公开(公告)日：2013-03-28

    申请号：US13479861

    申请日：2012-05-24

    申请人： Devin GIDDINGS ,  Nobuyoshi Saito ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hajime Yamaguchi

    发明人： Devin GIDDINGS ,  Nobuyoshi Saito ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hajime Yamaguchi

    IPC分类号： G06F3/045

    CPC分类号： G06F3/0412 ,  G06F3/0414

    摘要： According to one embodiment, a touch panel includes first interconnections, second interconnections, sensor units and a control unit. The first interconnections are arranged along a first direction, and extend along a second direction intersecting with the first direction. The second interconnections are arranged along a third direction intersecting with the first direction, and extend along a fourth direction intersecting with the third direction. The sensor units are provided in intersection portions of the first and second interconnections, include first and second ferromagnetic layers, and an intermediate layer, allow a current to be passed, and have one end connected to the first interconnections and another end connected to the second interconnections. The control unit is connected to the first and second interconnections. An electric resistance of the sensor units changes in accordance with a stress applied. The control unit senses a change in the electric resistance.

    摘要翻译： 根据一个实施例，触摸面板包括第一互连，第二互连，传感器单元和控制单元。 第一互连沿着第一方向布置，并且沿着与第一方向相交的第二方向延伸。 第二互连沿着与第一方向相交的第三方向布置，并且沿与第三方向相交的第四方向延伸。 传感器单元设置在第一和第二互连的交叉部分中，包括第一和第二铁磁层，以及中间层，允许电流通过，并且一端连接到第一互连，另一端连接到第二互连 互连。 控制单元连接到第一和第二互连。 传感器单元的电阻根据施加的应力而变化。 控制单元感测电阻的变化。

    Method of manufacturing a magneto-resistance effect element
    33.
    发明授权
    Method of manufacturing a magneto-resistance effect element 失效
    制造磁阻效应元件的方法

    公开(公告)号：US08671554B2

    公开(公告)日：2014-03-18

    申请号：US13419198

    申请日：2012-03-13

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/17 ,  H04R31/00

    CPC分类号： B25G1/102

    摘要： An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.

    摘要翻译： 用于制造具有磁性层，自由磁化层和间隔层的磁阻效应元件的示例性方法包括形成第一金属层，并在第一金属层上形成第二金属层。 执行第一转换处理以将第二金属层转换成第一绝缘层并形成贯穿第一绝缘层的第一金属部分。 在第一绝缘层和第一金属部分上形成第三金属层。 执行第二转换处理以将第三金属层转换成第二绝缘层并形成贯穿第二绝缘层的第二金属部分。

    Magnetoresistive element having free layer magnetic compound expressed by M1M2O
    34.
    发明授权
    Magnetoresistive element having free layer magnetic compound expressed by M1M2O 有权
    具有由M1M2O表示的自由层磁性化合物的磁阻元件

    公开(公告)号：US08184410B2

    公开(公告)日：2012-05-22

    申请号：US11902657

    申请日：2007-09-24

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    IPC分类号： G11B5/39 ,  G11C11/16

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

    摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc(where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.

    摘要翻译： 示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的间隔层。 第一磁性层和第二磁性层中的至少一个具有由M1aM2bXc（其中5＆nlE; a＆nlE; 68,10＆amp; nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V，Cr和Mn中的至少一种元素。 X是选自N，O和C中的至少一种元素。

    Magnetoresistive element and method of manufacturing the same
    37.
    发明申请
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US20090190262A1

    公开(公告)日：2009-07-30

    申请号：US12320668

    申请日：2009-01-30

    申请人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/127 ,  G11B5/48 ,  B05D3/00

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.

    摘要翻译： 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 由含氧或含氮材料形成并布置在磁化固定层中或在无磁化层中的功能层和一对电极，其垂直于磁阻膜的平面通过电流，其中晶体 功能层的取向平面与其上部或下部相邻层的结晶取向平面不同。

    Magnetoresistive element and method of manufacturing the same
    39.
    发明授权
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US08184408B2

    公开(公告)日：2012-05-22

    申请号：US12320668

    申请日：2009-01-30

    申请人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.

    摘要翻译： 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 由含氧或含氮材料形成并布置在磁化固定层中或在无磁化层中的功能层和一对电极，其垂直于磁阻膜的平面通过电流，其中晶体 功能层的取向平面不同于其上部或下部相邻层的结晶取向平面。