公开(公告)号：US20070045672A1

公开(公告)日：2007-03-01

申请号：US11491507

申请日：2006-07-24

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H01L29/80

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US08207591B2

公开(公告)日：2012-06-26

申请号：US13206544

申请日：2011-08-10

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/102

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： A photoelectric conversion device includes a first electrode; and, over the first electrode, photoelectric conversion layer that includes a first semiconductor layer having one conductivity, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer. An insulating layer is over the third semiconductor layer, and a second electrode is over the insulating layer and is electrically connected to the third semiconductor layer through the insulating layer. The third semiconductor layer and a part of the second semiconductor layer are removed in a region of the photoelectric conversion layer that does not overlap the insulating layer.

摘要翻译： 光电转换装置包括：第一电极; 并且在第一电极之上，包括具有一个导电性的第一半导体层，第一半导体层上的第二半导体层和具有与第二半导体层的一个导电性相反的导电性的第三半导体层的光电转换层。 绝缘层在第三半导体层之上，第二电极在绝缘层的上方，并通过绝缘层与第三半导体层电连接。 在不与绝缘层重叠的光电转换层的区域中去除第三半导体层和第二半导体层的一部分。

公开(公告)号：US20110291090A1

公开(公告)日：2011-12-01

申请号：US13206544

申请日：2011-08-10

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/0376

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

公开(公告)号：US07838812B2

公开(公告)日：2010-11-23

申请号：US12350271

申请日：2009-01-08

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H01J40/14 ,  H03F3/08 ,  H03K17/78 ,  H04N3/14

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US07772667B2

公开(公告)日：2010-08-10

申请号：US11383645

申请日：2006-05-16

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/075

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US07705283B2

公开(公告)日：2010-04-27

申请号：US11436086

申请日：2006-05-18

申请人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

发明人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

IPC分类号： G01J1/44 ,  H03F3/08 ,  H01L31/112 ,  G01R19/00 ,  H01L31/00 ,  H04N3/14

CPC分类号： G01J1/18 ,  G01J1/44 ,  G01J2001/4406 ,  G09G3/3611 ,  G09G2320/0626 ,  G09G2360/144 ,  G09G2360/145 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14643 ,  H01L27/14692 ,  H01L31/101 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.

摘要翻译： 本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。 本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置 开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。 通过本发明，可以检测从弱光到强光的光。

公开(公告)号：US20060260675A1

公开(公告)日：2006-11-23

申请号：US11383645

申请日：2006-05-16

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/00

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US20070187790A1

公开(公告)日：2007-08-16

申请号：US11226472

申请日：2005-09-15

申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

IPC分类号： H01L31/0203

CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

摘要： [Abstract]Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

摘要翻译： [摘要]考虑到进一步促进传感器元件的高输出和小型化，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

公开(公告)号：US07888714B2

公开(公告)日：2011-02-15

申请号：US11226472

申请日：2005-09-15

申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

IPC分类号： H01L31/062

CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

摘要： Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

摘要翻译： 考虑到传感器元件的高输出和小型化的进一步促进，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

公开(公告)号：US07691686B2

公开(公告)日：2010-04-06

申请号：US11579141

申请日：2005-05-16

申请人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

发明人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/14665 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L27/14692

摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.

摘要翻译： 本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。 根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件 通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。 因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。