公开(公告)号：US07531857B2

公开(公告)日：2009-05-12

申请号：US11335405

申请日：2006-01-19

申请人： Young-Hoon Park

发明人： Young-Hoon Park

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14687 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14689

摘要： There is provided an image sensor and a method of forming the same in order to prevent cross talk and to improve sensitivity. The image sensor includes a plurality of pixels for embodying colors having different wavelengths, and each of pixels includes a photoelectric conversion unit and a buried barrier layer having different thicknesses according to the wavelengths. The method of forming the image sensor includes: forming an epitaxial layer of a first type on a semiconductor substrate of a first type; and forming a buried barrier layer in the first type of epitaxial layer. The buried barrier layer is formed to have different thickness according to the wavelength.

摘要翻译： 提供了一种图像传感器及其形成方法，以防止串扰并提高灵敏度。 图像传感器包括用于实现具有不同波长的颜色的多个像素，并且每个像素包括根据波长具有不同厚度的光电转换单元和掩埋阻挡层。 形成图像传感器的方法包括：在第一类型的半导体衬底上形成第一类型的外延层; 以及在所述第一类型的外延层中形成掩埋阻挡层。 掩埋阻挡层根据波长形成为具有不同的厚度。

公开(公告)号：US07514284B2

公开(公告)日：2009-04-07

申请号：US11223707

申请日：2005-09-09

申请人： Jae-Ho Song ,  Young-Hoon Park ,  Sang-Hak Shin

发明人： Jae-Ho Song ,  Young-Hoon Park ,  Sang-Hak Shin

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685

摘要： Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a metal diffusion coefficient which is lower than a silicon oxide diffusion coefficient. Therefore, dark defects of the image sensor are reduced. In addition, the image sensor includes a color-ratio control layer. The color ratio control layer controls color ratios between the sensitivities to blue, green and red. As a result, color distinction of the picture that is embodied by the image sensor can be improved.

摘要翻译： 提供了图像传感器及其制造方法。 图像传感器包括设置在光电二极管上的阻挡图案。 阻挡图案由具有低于氧化硅扩散系数的金属扩散系数的绝缘材料形成。 因此，图像传感器的暗缺陷减少。 此外，图像传感器包括色比控制层。 颜色比例控制层控制对蓝色，绿色和红色的敏感度之间的颜色比。 结果，可以提高由图像传感器实现的图像的颜色区别。

公开(公告)号：US20080283884A1

公开(公告)日：2008-11-20

申请号：US12124270

申请日：2008-05-21

申请人： Young-Hoon Park

发明人： Young-Hoon Park

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14636

摘要： A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region including a plurality of nMOS transistors and pMOS transistors, and contact studs formed on the floating diffusion region and the junction region in the pixel array region, the contact studs comprising impurity-doped polysilicon layers.

公开(公告)号：US20070141682A1

公开(公告)日：2007-06-21

申请号：US10582166

申请日：2004-11-18

申请人： Young-Hoon Park ,  Jea-Young Chang ,  Jin-Nam Lee ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim

发明人： Young-Hoon Park ,  Jea-Young Chang ,  Jin-Nam Lee ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim

IPC分类号： C12P17/00 ,  C12N1/21

CPC分类号： C12P19/32 ,  C12R1/15 ,  Y10S435/822 ,  Y10S435/843

摘要： The invention relates to a microorganism, obtained by treating Corynebacterium ammoniagenes KCCM 10488 producing 5′-Xanthylic acid as parent strain with UV radiation and mutation Derivatives such as N-methyl-N′nitro-N-nitrosoguanidine (NTG), Having a resistance to 5-fluorotryptophan which enhances Biosynthesis of N5-N10-tetrahydrofolate used for transferring Two formyl group during the process of puring biosynthesis, making It possible to accumulate 5′xanthylic acid in culture medium at a high Yield and high concentration rate same period of fermentation.

摘要翻译： 本发明涉及通过用UV辐射和突变衍生物如N-甲基-N'-硝基-N-亚硝基胍（NTG）处理产生5'-辛酸作为亲本菌株的产氨基酸棒杆菌KCCM10488得到的微生物，具有抗 5-fluorotryptophan，其增强用于转移的N5-N10-四氢叶酸的生物合成在生物合成过程中两个甲酰基，使得在相同发酵时间的高收率和高浓度下可以在培养基中积累5'叶酸。

公开(公告)号：US20070075338A1

公开(公告)日：2007-04-05

申请号：US11542340

申请日：2006-10-03

申请人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park ,  Jin-Hyeong Park ,  Jeong-Hoon Bae ,  Jung-Ho Park

发明人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park ,  Jin-Hyeong Park ,  Jeong-Hoon Bae ,  Jung-Ho Park

IPC分类号： H01L29/768

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.

摘要翻译： 图像传感器包括其中限定有活性像素传感器区域的基板，形成在有源像素传感器区域中的多个第一导电型光电二极管和形成在有源像素传感器区域中的第一导电类型的第一深阱， 不包括多个第一导电型光电二极管。 此外，第一个深阱电连接到正电压。

公开(公告)号：US20060291115A1

公开(公告)日：2006-12-28

申请号：US11472374

申请日：2006-06-22

申请人： Jae-Ho Song ,  Young-Hoon Park ,  Eun-Soo Kim

发明人： Jae-Ho Song ,  Young-Hoon Park ,  Eun-Soo Kim

IPC分类号： H02H9/00

CPC分类号： H01L27/14601 ,  H01L27/1463

摘要： Provided are a semiconductor integrated circuit (IC) device and a method of fabricating the same. The semiconductor IC device may include first, second and third deep wells of a first conductivity type formed in a semiconductor substrate, and electrically isolated from one another; first and second wells of a second conductivity type and an active pixel sensor (APS) array formed between a top surface of the semiconductor substrate and the first, second and third deep wells, respectively; and first, second and third protective wells of the first conductivity type formed in the semiconductor substrate. The first and second wells of the second conductivity type and the APS array may be connected to different power supply voltages. The first, second and third protective wells of the first conductivity type may surround side surfaces of the first and second wells and the APS array, respectively.

摘要翻译： 提供一种半导体集成电路（IC）装置及其制造方法。 半导体IC器件可以包括形成在半导体衬底中并且彼此电隔离的第一导电类型的第一，第二和第三深阱; 分别形成在半导体衬底的顶表面和第一，第二和第三深孔之间的第二导电类型的第一和第二阱和有源像素传感器（APS）阵列; 以及形成在半导体衬底中的第一导电类型的第一，第二和第三保护阱。 第二导电类型的第一和第二阱和APS阵列可以连接到不同的电源电压。 第一导电类型的第一，第二和第三保护阱可分别围绕第一和第二阱和APS阵列的侧表面。

公开(公告)号：US20060163451A1

公开(公告)日：2006-07-27

申请号：US11336906

申请日：2006-01-23

申请人： Young-Hoon Park ,  Tae-Seok Oh ,  Eun-Soo Kim ,  June-Taeg Lee

发明人： Young-Hoon Park ,  Tae-Seok Oh ,  Eun-Soo Kim ,  June-Taeg Lee

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L31/02162 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02161

摘要： Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.

公开(公告)号：US07057219B2

公开(公告)日：2006-06-06

申请号：US10461265

申请日：2003-06-13

申请人： Young-Hoon Park ,  Sang-Il Jung

发明人： Young-Hoon Park ,  Sang-Il Jung

IPC分类号： H01L31/103

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14689

摘要： A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.

公开(公告)号：US20050200734A1

公开(公告)日：2005-09-15

申请号：US11065892

申请日：2005-02-25

申请人： Yu-Jin Ahn ,  Young-Hoon Park ,  Jae-Ku Lee ,  June-Taeg Lee ,  Sung-Won Doh ,  Bum-Suk Kim

发明人： Yu-Jin Ahn ,  Young-Hoon Park ,  Jae-Ku Lee ,  June-Taeg Lee ,  Sung-Won Doh ,  Bum-Suk Kim

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H04N5/225

CPC分类号： H01L27/14627

摘要： A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.

摘要翻译： CMOS图像器件包括其中形成有光电二极管区域的半导体衬底，形成在对应于半导体衬底上的光电二极管区域的位置处的内透镜，以及沿着内透镜的表面形成在内透镜上的辅助透镜 其中辅助透镜具有与内透镜相同的折射率。

公开(公告)号：US06573184B2

公开(公告)日：2003-06-03

申请号：US10094571

申请日：2002-03-07

申请人： Young-Hoon Park

发明人： Young-Hoon Park

IPC分类号： H01L2144

CPC分类号： C23C16/45544 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  Y10S438/935 ,  Y10T137/4673

摘要： An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from an inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, and an exhaust line for exhausting the gas from the reactor.