摘要:
A semiconductor device comprising: a first insulating film formed on a semiconductor substrate; a semiconductor layer at least a part of which is formed on the first insulating film; a second insulating film comprising a non-doped silicon oxide film and formed on the semiconductor layer; a third insulating film comprising a silicon oxide film containing at least phosphorus formed on the second insulating film; and a fourth insulating film comprising a non-doped silicon oxide film formed on the third insulating film.
摘要:
A disk drive including a disk rotatably mounted in a housing and having a plurality of tracks, a rotating mechanism for rotating the disk, a head slider having a transducer for reading/writing data on the disk, and an actuator for moving the head slider across the tracks. The actuator includes an actuator arm rotatably mounted in the housing, a suspension having a front end portion for supporting the head slider and a base end portion fixed to the actuator arm, and a pad mounted on a disk opposing surface of the actuator arm. The pad overlaps at least an outermost circumferential portion of the disk in a specific position of the actuator upon stoppage of driving of the disk drive.
摘要:
In a thermal displacement compensating device and a thermal displacement compensating method for a machine tool, a block temperature obtaining section obtains temperatures of respective blocks based on temperature information detected by temperature sensors wherein temperatures in each of the respective blocks into which a column is divided to be pluralized are defined as a uniform value. An FEM analysis section performs a structural analysis by a finite element method based on the temperatures of the respective blocks obtained by the block temperature obtaining section and infers thermal displacement amounts of the column. A compensation value calculation section calculates a compensation value for a machining command position based on the thermal displacement amounts of the column inferred by the FEM analysis section. A compensation section compensates the machining command position by the compensation value obtained by the compensation value calculation section.
摘要:
An ignition timing controller for an engine includes basic knock-limit ignition timing calculation means that calculates a basic knock-limit ignition timing on the basis of an operating state of the engine; learning-region variation calculation means that learns the knock-limit ignition timing of the engine in two operating regions and thereby calculates a learning-region variation due to octane number and a learning-region variation due to humidity in one of the operating regions; estimated variation calculation means that estimates a variation due to octane number and a variation due to humidity in a present operating state on the basis of the learning-region variation due to octane number and the learning-region variation due to humidity; and knock-limit ignition timing calculation means that calculates the knock-limit ignition timing in the present operating state on the basis of the basic knock-limit ignition timing, the variation due to octane number, and the variation due to humidity.
摘要:
A control device includes an opening detector that detects the opening of a control valve driven by an electric actuator. A control element sets the target opening of the control valve, thereby to control the electric actuator in accordance with a deviation between the target opening and the detected opening. In the case where a predetermined necessary condition containing at least a condition for the absolute value of the deviation to be smaller than a predetermined value is satisfied, power to the electric actuator is interrupted to prevent the electric actuator from generating a driving force. This reduces situations where the driving force to be applied from the electric actuator to the control valve fluctuates finely to suppress the progress of the wear or deterioration of the components of the electric actuator.
摘要:
A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.
摘要:
A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.
摘要:
A pneumatic tire and a rim includes a noise damper, fixed to a tire inner surface or a rim inner surface with the upper surface facing a tire inner space, and extending in the tire circumferential direction. The noise damper is made of a sponge having a volume ranging from 0.4 to 20% of the volume of the tire inner space. The noise damper is a laterally long and flat, with a maximum thickness ranging from 5 to 45 mm and a width more than the maximum thickness. The upper surface extends along a wavy curve including a hilltop, valley bottoms on each side of the hilltop and slopes extending down to the respective valley bottoms from the hilltop. Each end of the upper surface is terminated at the valley bottoms or the slopes. A thickness from the upper surface to the bottom surface ranges from 1.0 to 15.0 mm.
摘要:
The present invention provides a method for extraction of metals selected from Cr, Mo, Pd, Tc, W, Re, and Pu using a new extractant of methyliminobisalkylacetamide represented by a formula (I): CH3—N—(CH2CONR2)2 (I) wherein R represents an alkyl group having 8-12 carbon atoms.
摘要:
According to an aspect of the invention, there is provided, a gas diffusion layer, including, base materials integrated being including in the gas diffusion layer configured in an air electrode, wettability of a surface of each base material changing in an integrated direction.