Ink jet recording apparatus
    31.
    发明授权
    Ink jet recording apparatus 有权
    喷墨记录装置

    公开(公告)号:US08317316B2

    公开(公告)日:2012-11-27

    申请号:US12832893

    申请日:2010-07-08

    IPC分类号: B41J2/01 B41J29/13

    摘要: An ink jet recording apparatus is presented. The ink jet recording apparatus includes an apparatus casing comprising a discharge port which opens in a forward direction, a support member disposed within the apparatus casing in the rear of the discharge port and configured to support a recording medium, an ink head disposed within the apparatus casing and configured to eject ink which is curable with irradiation of ultraviolet light to the recording medium, an ultraviolet light irradiation device disposed within the apparatus casing and configured to irradiate ultraviolet light to the recording medium, and a first cover body configured to cover the discharge port in a freely openable and closeable manner, wherein the first cover body is opened upon discharging the recording medium via the discharge port.

    摘要翻译: 提出了一种喷墨记录装置。 喷墨记录装置包括:装置壳体,包括沿向前方向打开的排出口;支撑构件,其设置在排出口后部的设备壳体内并构造成支撑记录介质,设置在设备内的墨头 壳体,被配置为将能够通过紫外线照射固化的油墨喷射到记录介质上;紫外线照射装置,其设置在所述设备壳体内并被配置为向所述记录介质照射紫外线;以及第一盖体,其被配置为覆盖所述放电 端口,其可自由打开和关闭的方式,其中当经由排出口排出记录介质时,第一盖体打开。

    Hardmask process for forming a reverse tone image using polysilazane
    32.
    发明授权
    Hardmask process for forming a reverse tone image using polysilazane 有权
    使用聚硅氮烷形成反向色调图像的硬掩模工艺

    公开(公告)号:US08084186B2

    公开(公告)日:2011-12-27

    申请号:US12368720

    申请日:2009-02-10

    摘要: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

    摘要翻译: 本发明涉及一种在装置上形成反向色调图像的方法,包括: a)在衬底上形成可选的吸收有机底层; b)在底层上形成光致抗蚀剂的涂层; c)形成光致抗蚀剂图案; d)从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层,其中聚硅氮烷涂层比光致抗蚀剂图案厚,此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e)蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平,使得光刻胶图案显露出来; 以及f)干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层,从而在存在光致抗蚀剂图案的下方形成开口。 本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

    RADIO COMMUNICATION SYSTEM AND AUTHENTICATION PROCESSOR SELECTION METHOD
    33.
    发明申请
    RADIO COMMUNICATION SYSTEM AND AUTHENTICATION PROCESSOR SELECTION METHOD 审中-公开
    无线电通信系统和认证处理器选择方法

    公开(公告)号:US20110029770A1

    公开(公告)日:2011-02-03

    申请号:US12934045

    申请日:2009-03-04

    申请人: Yusuke Takano

    发明人: Yusuke Takano

    IPC分类号: H04L29/06 H04L9/32

    摘要: The present invention applies to a radio communication system that has a subscriber authentication server provided with a plurality of authentication processors and first and second authentication verification apparatuses that carry out each of authentication requests for first and second authentications to the subscriber authentication server for the same subscriber. In this radio communication system, the subscriber authentication server, upon success of the first authentication, reports to the first authentication verification apparatus identification information of the authentication processor that carried out the first authentication, and the first authentication verification apparatus reports to the second authentication verification apparatus the identification information that was reported from the subscriber authentication server.

    摘要翻译: 本发明适用于具有设置有多个认证处理器的用户认证服务器的无线通信系统和对同一用户的用户认证服务器进行第一和第二认证的认证请求的第一和第二认证验证装置 。 在该无线通信系统中,用户认证服务器在第一认证成功时向第一认证验证装置报告进行了第一认证的认证处理器的识别信息,第一认证验证装置向第二认证验证报告 设备从用户认证服务器报告的标识信息。

    Hardmask Process for Forming a Reverse Tone Image Using Polysilazane
    34.
    发明申请
    Hardmask Process for Forming a Reverse Tone Image Using Polysilazane 有权
    使用聚硅氮烷形成反向色调图像的硬掩模工艺

    公开(公告)号:US20100203299A1

    公开(公告)日:2010-08-12

    申请号:US12368720

    申请日:2009-02-10

    IPC分类号: B32B3/10 G03F7/20

    摘要: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

    摘要翻译: 本发明涉及一种在装置上形成反向色调图像的方法,包括: a)在衬底上形成任选的吸收有机底层; b)在底层上形成光致抗蚀剂的涂层; c)形成光致抗蚀剂图案; d)从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层,其中聚硅氮烷涂层比光致抗蚀剂图案厚,此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e)蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平,使得光刻胶图案显露出来; 以及f)干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层,从而在存在光致抗蚀剂图案的下方形成开口。 本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

    Anti-reflective coating composition and production method for pattern using the same
    35.
    发明授权
    Anti-reflective coating composition and production method for pattern using the same 失效
    防反射涂料组合物及其制作方法使用相同

    公开(公告)号:US07537882B2

    公开(公告)日:2009-05-26

    申请号:US11630411

    申请日:2005-06-29

    IPC分类号: G03F7/11 H01L21/027

    摘要: The object of the present invention is to provide an anti-reflective coating composition having excellent coating properties while maintaining performance as an anti-reflective film. An anti-reflective coating composition comprising at least the following components (A), (B), (C), (D), and (E) and a production method for a pattern using the anti-reflective coating composition, (A) perfluoroalkyl•alkylenesulfonic acid represented by the following formula (1): CnF2n+1(CH2CH2)mSO3H (1) (wherein, n represents an integer from 1 to 20, and m represents an integer from 0 to 20); (B) organic amine; (C) water-soluble polymer; (D) perfluoroalkylethyl group containing compound represented by the following formula (2): CkF2k+1CH2CH2—X—Y (2) (wherein, k represents an integer from 1 to 20, x represents a single bond or a divalent linking group, y represents an anionic group or a nonionic group, and this compound has a structure different from that of the component (A)); and (E) water.

    摘要翻译: 本发明的目的是提供一种具有优异涂层性能的抗反射涂料组合物,同时保持作为抗反射膜的性能。 至少包含以下组分(A),(B),(C),(D)和(E)的抗反射涂料组合物和使用该抗反射涂料组合物的图案的制备方法,(A) 由下式(1)表示的全氟烷基亚烷基磺酸:CnF2n + 1(CH2CH2)mSO3H(1)(其中,n表示1〜20的整数,m表示0〜20的整数) (B)有机胺; (C)水溶性聚合物; (D)由下式(2)表示的含全氟烷基乙基的化合物:CkF2k + 1CH2CH2-XY(2)(其中,k表示1〜20的整数,x表示单键或二价连接基,y表示 阴离子基或非离子基,该化合物具有与(A)成分不同的结构)。 和(E)水。

    Water soluble resin composition, method of pattern formation and method of inspecting resist pattern
    36.
    发明授权
    Water soluble resin composition, method of pattern formation and method of inspecting resist pattern 有权
    水溶性树脂组合物,图案形成方法和抗蚀剂图案检查方法

    公开(公告)号:US07335464B2

    公开(公告)日:2008-02-26

    申请号:US10546334

    申请日:2004-02-16

    IPC分类号: G03F7/039 G03F7/40

    摘要: A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layer 5 has a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.

    摘要翻译: 本发明的水溶性树脂组合物至少包含水溶性树脂,能够通过加热产生酸的酸发生剂和含有水的溶剂。 将水溶性树脂组合物涂布在由抗蚀剂如ArF响应性辐射敏感性树脂组合物形成的高度防水抗蚀剂图案3上,在基材1上形成涂层4。 抗蚀剂图案3和涂层4被热处理以在抗蚀剂图案3的表面附近形成显影剂不溶性改性涂层5。 显影涂层,形成由改性层5增厚的抗蚀剂图案。 改性层是具有足够厚度的层,并且能够在诸如ArF响应性辐射敏感性树脂组合物的高度防水抗蚀剂图案中形成具有高尺寸可控性。 结果,抗蚀剂图案的分离尺寸和孔径尺寸被有效地降低到小于限定分辨率。 由于改性层5具有电子束照射时抗蚀剂图案的保护膜的功能,因此可以防止通过尺寸测量SEM的电子束照射时的抗蚀剂图案的尺寸测量波动。

    Material for forming fine pattern and method for forming fine pattern using the same
    37.
    发明申请
    Material for forming fine pattern and method for forming fine pattern using the same 有权
    用于形成精细图案的材料和使用其形成精细图案的方法

    公开(公告)号:US20060183218A1

    公开(公告)日:2006-08-17

    申请号:US10565113

    申请日:2004-06-04

    IPC分类号: C12M1/34

    CPC分类号: G03F7/40

    摘要: In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.

    摘要翻译: 在通过施加精细图案形成材料使抗蚀剂图案小型化的方法中,提供了用于提供具有固化涂层图案的精细图案形成材料,其中通过水显影减少显影缺陷,其中精细图案形成材料 包括水溶性树脂,水溶性交联剂和水或由水和水溶性有机溶剂组成的混合溶液,并且还包含胺化合物。

    Water soluble resin composition, method of pattern formation and method of inspecting resist pattern
    38.
    发明申请
    Water soluble resin composition, method of pattern formation and method of inspecting resist pattern 有权
    水溶性树脂组合物,图案形成方法和抗蚀剂图案检查方法

    公开(公告)号:US20060160015A1

    公开(公告)日:2006-07-20

    申请号:US10546334

    申请日:2004-02-16

    IPC分类号: G03C1/76

    摘要: A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layer 5 has a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.

    摘要翻译: 本发明的水溶性树脂组合物至少包含水溶性树脂,能够通过加热产生酸的酸发生剂和含有水的溶剂。 将水溶性树脂组合物涂布在由抗蚀剂如ArF响应性辐射敏感性树脂组合物形成的高度防水抗蚀剂图案3上,在基材1上形成涂层4。 抗蚀剂图案3和涂层4被热处理以在抗蚀剂图案3的表面附近形成显影剂不溶性改性涂层5.涂层被显影,并且由改性层5增厚的抗蚀剂图案 形成了。 改性层是具有足够厚度的层,并且能够在诸如ArF响应性辐射敏感性树脂组合物的高度防水抗蚀剂图案中形成具有高尺寸可控性。 结果,抗蚀剂图案的分离尺寸和孔径尺寸被有效地降低到小于限定分辨率。 由于改性层5具有电子束照射时抗蚀剂图案的保护膜的功能,因此可以防止通过尺寸测量SEM的电子束照射时的抗蚀剂图案的尺寸测量波动。

    Composition for antireflection coating and method for forming pattern
    39.
    发明申请
    Composition for antireflection coating and method for forming pattern 有权
    抗反射涂层用组合物及其形成方法

    公开(公告)号:US20050239932A1

    公开(公告)日:2005-10-27

    申请号:US10519242

    申请日:2003-06-26

    摘要: An anti-reflective coating film is formed by applying on a chemically amplified photoresist film an anti-reflective coating composition comprising an alkali-soluble fluorine-containing polymer, an acid, an amine and a solvent capable of dissolving these components and having a pH of 7 or less. The formed anti-reflective coating film can serve to prevent multiple reflections within the photoresist film, increase the amount of reduction in thickness of the photoresist film upon development with a developer after exposure, and form a pattern having a rectangular cross-sectional pattern and not having T-top or round top.

    摘要翻译: 通过在化学放大的光致抗蚀剂膜上施加抗反射涂层组合物形成抗反射涂膜,所述抗反射涂层组合物包含碱溶性含氟聚合物,酸,胺和能够溶解这些组分的溶剂,并且具有 7以下。 所形成的抗反射涂膜可以用于防止光致抗蚀剂膜内的多次反射,在曝光后用显影剂显影时增加光致抗蚀剂膜的厚度减小量,并形成具有矩形横截面图案的图案 有T顶或圆顶。

    Composition for reflection reducing coating
    40.
    发明授权
    Composition for reflection reducing coating 有权
    防反射涂层用组合物

    公开(公告)号:US06309789B1

    公开(公告)日:2001-10-30

    申请号:US09485087

    申请日:2000-05-25

    IPC分类号: G03F7004

    CPC分类号: C09D5/00 G03F7/091

    摘要: The anti-reflective coating composition comprising at least perfluoroalkylsulfonic acid (A) represented by the general formula: CnF2n+1SO3H (n is an integer of 4 to 8), organic amine (B), water-soluble polymer (C), perfluoroalkyl sulfonamide (D) represented by the general formula: CnF2n+1SO2NH2 (n is an integer of 1 to 8) and water (E) and having a pH value of 1.3 to 3.3 is applied onto a photoresist film formed on a substrate, thus forming an anti-reflective coating. The photoresist and anti-reflective coating are then exposed to light and developed to give a resist pattern. The coating composition can form a uniform anti-reflective coating free of standing wave, multiple reflection, T-top and PED (Post Exposure Delay) in a small amount of drip onto any types of resists regardless of the surface shape of a substrate.

    摘要翻译: 所述抗反射涂料组合物至少包含由以下通式表示的全氟烷基磺酸(A):CnF2n + 1SO3H(n为4〜8的整数),有机胺(B),水溶性聚合物(C),全氟烷基磺酰胺 (D)由CnF2n + 1SO2NH2(n为1〜8的整数)和水(E)表示,pH值为1.3〜3.3的物质涂布到形成在基板上的光致抗蚀剂膜上,形成 防反射涂层。 然后将光致抗蚀剂和抗反射涂层曝光并显影以得到抗蚀剂图案。 涂料组合物可以形成均匀的抗反射涂层,无需驻留波,多重反射,T顶和PED(Post Exposure Delay),少量滴落到任何类型的抗蚀剂上,而不管基材的表面形状如何。