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    Apparatus for manufacturing flat-panel display
    32.
    发明申请
    Apparatus for manufacturing flat-panel display 审中-公开
    用于制造平板显示器的装置

    公开(公告)号：US20050183665A1

    公开(公告)日：2005-08-25

    申请号：US11064150

    申请日：2005-02-23

    Applicant: Young Lee ,  Jun Choi ,  Saeng Jo ,  Sung Ahn

    Inventor： Young Lee ,  Jun Choi ,  Saeng Jo ,  Sung Ahn

    IPC: C23C16/00 ,  G09B9/00 ,  H01L21/00

    CPC classification number: H01L21/67236 ,  H01L21/67196 ,  H01L21/67201

    Abstract: A flat-panel display (FPD) manufacturing apparatus is disclosed which not only includes a load lock chamber, a feeding chamber, and a processing chamber, at least one of which has a vertically-stacked chamber structure to achieve an enhancement in substrate processing efficiency, but also includes a temporary substrate storing space for temporarily storing substrates in the feeding chamber to reduce the time taken to feed substrates. Another FPD manufacturing apparatus is disclosed which includes a load lock chamber, a feeding chamber connected to the load lock chamber, a temporary substrate storing space arranged at a predetermined portion of the feeding chamber, and at least one processing chamber connected to the feeding chamber.

    Abstract translation: 公开了一种平板显示器（FPD）制造装置，其不仅包括负载锁定室，馈送室和处理室，其中至少一个具有垂直堆叠的腔室结构，以实现衬底处理效率的提高 而且还包括用于在进料室中临时存储基板的临时基板存储空间，以减少进料基板所需的时间。 公开了另一种FPD制造装置，其包括负载锁定室，连接到负载锁定室的馈送室，布置在馈送室的预定部分处的临时衬底存储空间，以及连接到馈送室的至少一个处理室。

    Substrate processing apparatus
    34.
    发明授权
    Substrate processing apparatus 失效
    基板加工装置

    公开(公告)号：US08272826B2

    公开(公告)日：2012-09-25

    申请号：US12144680

    申请日：2008-06-24

    Applicant: Cheol Rae Jo ,  Jang-Wan Park ,  Won Ki Jeong

    Inventor： Cheol Rae Jo ,  Jang-Wan Park ,  Won Ki Jeong

    IPC: H01L21/677

    CPC classification number: H01L21/67161

    Abstract: A substrate processing apparatus includes first and second transfer chambers, first and second load lock chambers for exchanging one or more substrates with respective ones of first and the second transfer chambers, and a substrate transfer unit, located between the first and second load lock chambers, for transferring the one or more substrates to the first and second load lock chambers.

    Abstract translation: 基板处理装置包括第一和第二传送室，用于与第一和第二传送室中的相应的一个或多个基板交换一个或多个基板的第一和第二加载锁定室以及位于第一和第二加载锁定室之间的基板传送单元， 用于将一个或多个衬底传送到第一和第二负载锁定室。

    Plasma treatment apparatus
    39.
    发明申请
    Plasma treatment apparatus 失效
    等离子体处理装置

    公开(公告)号：US20070227660A1

    公开(公告)日：2007-10-04

    申请号：US11730595

    申请日：2007-04-03

    Applicant: Chun-Sik Kim

    Inventor： Chun-Sik Kim

    IPC: C23F1/00

    CPC classification number: H01J37/3244 ,  H01J2237/022

    Abstract: The present invention relates to a plasma treatment apparatus, and more particularly, to a plasma treatment apparatus capable of supplying pressure gas while preventing flying of particles accumulated on the bottom of a chamber. The plasma treatment apparatus of the present invention comprises a chamber; an intake/exhaust portion provided to the bottom of the chamber to supply the chamber with pressure gas, the intake/exhaust portion being configured such that an inner diameter thereof is increased upwardly; and a pressure gas source connected to the intake/exhaust portion to supply the pressure gas thereto. The apparatus may further comprise a vacuum source connected to the intake/exhaust portion to exhaust the chamber.

    Abstract translation: 等离子体处理装置技术领域本发明涉及等离子体处理装置，更具体地，涉及一种能够在防止积聚在室底部的颗粒飞散的同时供给压力气体的等离子体处理装置。 本发明的等离子体处理装置包括：室; 所述进气/排气部分设置在所述室的底部以向所述室供应压力气体，所述进气/排气部分构造成使其内径向上增加; 以及连接到进气/排气部分以将压力气体供应到其上的压力气体源。 该装置还可以包括连接到进气/排气部分以排出室的真空源。

    Plasma processing apparatus
    40.
    发明申请
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US20070204958A1

    公开(公告)日：2007-09-06

    申请号：US11711612

    申请日：2007-02-28

    Applicant: Seoung-Wook Lee ,  Young-Joo Hwang

    Inventor： Seoung-Wook Lee ,  Young-Joo Hwang

    IPC: C23F1/00 ,  C23C16/00

    CPC classification number: C23C16/54 ,  C23C16/5096 ,  H01J2237/0206 ,  Y10S156/914 ,  Y10S414/135

    Abstract: Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers. Each of the gate valves includes a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein; a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; a valve driving unit connected to the valve for moving the valve in the vertical direction; and a ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing.

    Abstract translation: 公开了一种等离子体处理装置，其中在传送室中不产生寄生等离子体。 等离子体处理装置具有装载锁定室，传送室，处理室和安装在用于传送基板的室之间的闸阀和打开和关闭室的开口的闸阀。 每个闸阀包括设置在室之间的阀壳体，使得阀壳体通过在其间插入密封构件而接触室的侧表面，并在其中形成指定的封闭空间; 阀，其包括与处理室侧面上的阀壳体的内表面接触的密封板和在传送室侧面与阀壳体的内表面接触的后板; 连接到阀的阀驱动单元，用于沿垂直方向移动阀; 以及形成在所述阀的表面上的接地构件，用于当所述阀接触所述阀壳体的内表面时电气连接所述阀和所述阀壳体。

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