TREATMENT DEVICE FOR SEMICONDUCTOR MANUFACTURING EXHAUST GAS

    公开(公告)号:US20240082782A1

    公开(公告)日:2024-03-14

    申请号:US18274277

    申请日:2021-04-26

    发明人: Hiroshi IMAMURA

    IPC分类号: B01D53/70 B01D47/06 B01D53/76

    摘要: A treatment device for semiconductor manufacturing exhaust gas of the present invention includes an inlet scrubber, a gas treatment furnace, and an outlet scrubber. The gas treatment furnace includes an outer cylinder having a main body that includes a gas treatment space formed therein and a gas introduction port drilled in a bottom thereof, an inner cylinder that extends across the gas treatment space such that one end thereof is mounted to the bottom inside the main body so as to enclose the gas introduction port and another end thereof is opened and located at a position close to a ceiling surface of the main body, and an electric heater that is hung from a ceiling of the main body and that has a heating element having a long bar shape placed in an internal space of the inner cylinder.

    Reactive byproduct treatment in gas generators

    公开(公告)号:US11707714B1

    公开(公告)日:2023-07-25

    申请号:US17738838

    申请日:2022-05-06

    申请人: Anasphere, Inc.

    发明人: John A. Bognar

    IPC分类号: B01D53/76 B64B1/58

    摘要: The disclosure provides devices, methods, and systems for treating reactive metals and other reactive species produced during operation of thermal solid-state gas generators. Thermal energy, which may be derived from the gas generation process, physical contact with the evolved gases, or a dedicated or shared heat source, is used to release a gaseous species that neutralizes the reactive species. In some embodiments, the neutralization reaction causes the release of additional product gas(es).