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    Method for manufacturing a micromechanical sensor element
    32.
    发明授权
    Method for manufacturing a micromechanical sensor element 有权
    微机械传感器元件的制造方法

    公开(公告)号：US07572661B2

    公开(公告)日：2009-08-11

    申请号：US11223637

    申请日：2005-09-08

    Applicant: Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    Inventor： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    IPC: H01L21/00

    CPC classification number: B81C1/00047 ,  B81B2203/0109 ,  B81C2201/0115 ,  B81C2201/0116 ,  G01L9/0045

    Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

    Abstract translation: 描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。 执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。 此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。 随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。 由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。 这种格子状结构优选地从半导体的表面延伸到深度。 用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。 进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。 在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

    Micromechanical sensor element
    33.
    发明申请
    Micromechanical sensor element 有权
    微机械传感器元件

    公开(公告)号：US20060063293A1

    公开(公告)日：2006-03-23

    申请号：US11223637

    申请日：2005-09-08

    Applicant: Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    Inventor： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    IPC: H01L21/00

    CPC classification number: B81C1/00047 ,  B81B2203/0109 ,  B81C2201/0115 ,  B81C2201/0116 ,  G01L9/0045

    Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

    Abstract translation: 描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。 执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。 此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。 随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。 由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。 这种格子状结构优选地从半导体的表面延伸到深度。 用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。 进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。 在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

    PROCESS FOR MANUFACTURING A MEMS PRESSURE SENSOR, AND CORRESPONDING MEMS PRESSURE SENSOR
    36.
    发明申请
    PROCESS FOR MANUFACTURING A MEMS PRESSURE SENSOR, AND CORRESPONDING MEMS PRESSURE SENSOR 审中-公开

    公开(公告)号：US20170284882A1

    公开(公告)日：2017-10-05

    申请号：US15276617

    申请日：2016-09-26

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Lorenzo BALDO ,  Sarah ZERBINI ,  Enri DUQI

    IPC: G01L9/00 ,  B81B7/00 ,  B81C1/00 ,  B81B3/00

    CPC classification number: G01L9/0052 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C1/00182 ,  B81C2201/0116

    Abstract: A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate region made of conductive material, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate region, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

    INTEGRATED MICRO-ELECTROMECHANICAL DEVICE OF SEMICONDUCTOR MATERIAL HAVING A DIAPHRAGM, SUCH AS A PRESSURE SENSOR AND AN ACTUATOR
    38.
    发明申请
    INTEGRATED MICRO-ELECTROMECHANICAL DEVICE OF SEMICONDUCTOR MATERIAL HAVING A DIAPHRAGM, SUCH AS A PRESSURE SENSOR AND AN ACTUATOR 审中-公开
    具有膜片的半导体材料的集成微电气装置，例如压力传感器和执行器

    公开(公告)号：US20160176702A1

    公开(公告)日：2016-06-23

    申请号：US14856707

    申请日：2015-09-17

    Applicant: STMICROELECTRONICS S.r.I.

    Inventor： Alberto PAGANI ,  Alessandro MOTTA

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/0074 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0116 ,  G01L9/0045

    Abstract: An integrated micro-electromechanical device includes a first body of semiconductor material having a first face and a second face opposite the first surface, with the first body including a buried cavity forming a diaphragm delimited between the buried cavity and the first face. The diaphragm is monolithic with the first body. At least one first magnetic via extends between the second face and the buried cavity of the first body. A first magnetic region extends over the first face of the first body. A first coil extends over the second face of the first body and is magnetically coupled to the first magnetic via.

    Abstract translation: 集成的微机电装置包括具有第一面和与第一表面相对的第二面的半导体材料的第一本体，第一主体包括形成在掩埋腔和第一面之间的隔膜的掩埋腔。 隔膜与第一个主体是整体的。 至少一个第一磁通孔在第二面和第一主体的埋入腔之间延伸。 第一磁性区域在第一主体的第一面上延伸。 第一线圈在第一主体的第二面上延伸并且磁耦合到第一磁通孔。

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