Abstract:
An integrated receiver with channel selection and image rejection is substantially implemented on a single CMOS integrated circuit. A receiver front end provides programable attenuation and a programable gain low noise amplifier. LC filters integrated onto the substrate in conjunction with image reject mixers provide image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. Active filters utilize multi track spiral inductors with shields to increase circuit Q. Frequency planning provides additional image rejection. Local oscillator signal generation methods on chip reduce distortion. A PLL generates needed out of band LO signals. Direct synthesis generates in band LO signals. PLL VCOs are centered automatically. A differential crystal oscillator provides a frequency reference. Differential signal transmission throughout the receiver is used. ESD protection is provided by a pad ring and ESD clamping structure. Shunts utilize a gate boosting at each pin to discharge ESD build up. An IF VGA utilizes distortion cancellation achieved with cross coupled differential pair amplifiers having their Vds dynamically modified in conjunction with current steering of the differential pairs sources.
Abstract:
Systems for controlling the frequency of the output signal of a controllable oscillator in a frequency synthesizer are provided. One such system comprises a controllable oscillator and a frequency control circuit. The controllable oscillator is configured to generate an output signal that has a predefined frequency. The controllable oscillator is also configured with a plurality of operational states that are controlled by the frequency control circuit. Each operational state of the controllable oscillator defines a distinct frequency for the output signal of the controllable oscillator. The frequency control circuit receives the output signal of the controllable oscillator and determines the distinct frequency for the output signal that best approximates the predefined frequency. The frequency control circuit may also provide a control signal to the controllable oscillator that is configured to change the controllable oscillator to the operational state corresponding to the distinct frequency that best approximates the predefined frequency.
Abstract:
A gain compensator compensates for the gain variation of a varactor-tuned voltage tuned oscillator (VCO) in a phase lock loop (PLL). The VCO includes a parallel LC circuit having multiple fixed capacitors that can be switched-in or switched-out of the LC circuit according to a capacitor control signal to perform band-select tuning of the VCO. The gain compensator compensates for the variable VCO gain by generating a charge pump reference current that is based on the same capacitor control signal that controls the fixed capacitors in the LC circuit. The gain compensator generates the charge pump reference current by replicating a reference scale current using unit current sources. The number of times the reference scale current is replicated is based on the fixed capacitance that is switched-in to the LC circuit and therefore the frequency band of the PLL. The reference scale current is generated based on a PLL control that specifics certain PLL characteristics such as reference frequency, loop bandwidth, and loop damping. Therefore, the reference pump current can be efficiently optimized for changing PLL operating conditions, in addition to compensating for variable VCO gain.
Abstract:
A programming method (250) for digitally programming the adjustment of an electronic trim capacitor (212, 314, 414). In an initial step (252), programming is initiated by setting an enable terminal (224). In subsequent steps (254, 256) a pulse signal (226) then applied to a program terminal (222) and the number of pulses (228) provided to the programming terminal (222) while the enable terminal (224) is set determines the total number of capacitance increments for which the electronic trim capacitor (212, 314, 414) is programmed. The electronic trim capacitor (212, 314, 414) may be incorporated into an integrated circuit (12, 312) or a module (412) and the electronic trim capacitor (212, 314, 414) may be programmed and used “in situ” in a more general circuit (1) such as an oscillator (301) or an amplifier (401).
Abstract:
An integrated VCO having an improved tuning range over process and temperature variations. There is therefore provided in a present embodiment of the invention an integrated VCO. The VCO comprises, a substrate, a VCO tuning control circuit responsive to a VCO state variable that is disposed upon the substrate, and a VCO disposed upon the substrate, having a tuning control voltage input falling within a VCO tuning range for adjusting a VCO frequency output, and having its tuning range adjusted by the tuning control circuit in response to the VCO state variable.
Abstract:
The Colpitts circuit is configured so that an equivalent capacitance of the voltage-dividing first and second capacitors connected in series through the output of the transistor amplifier is variable under the condition that the ratio of the capacitance of the first capacitor to that of the second capacitor is kept unchanged at a prescribed value. The first and second capacitors are, as a whole, configured as a matrix of elemental capacitors with 2 rows and a plural number n of columns, an array of the elemental capacitors in the first row being allotted to the first capacitor and an array of the elemental capacitors in the second row being allotted to the second capacitor. Two elemental capacitors in each column j (j=1, 2, . . . n) are connected in series and the ratio of the capacitance of the elemental capacitor corresponding to the 1j element of the matrix to the capacitance of the elemental capacitor corresponding to the 2j element has the prescribed value. The Colpitts circuit further has a first switch and a second switch allotted to each of the columns. Each of the elemental capacitors allocated to the first row is connected to the control electrode of the transistor amplifier through the first switch, and the junction of the two elemental capacitors allocated to each column is connected to the output of said transistor amplifier through the second switch. The first and second switches are operated synchronously for every column.
Abstract:
A transmitter system having an adjustable monolithic frequency stabilization and tuning internal capacitor circuit. The transmitter system has a transmitter for generating and transmitting a transmitter oscillator frequency signal. A data generating chip is coupled to the transmitter. The data generating chip is used for adjusting and controlling the transmitter oscillator frequency signal. A variable capacitor circuit is located internal to the data generating chip and is coupled to a ground pin and one of a plurality of function pins on the data generating chip. The variable capacitor circuit is used for adjusting and setting the centerpoint of the transmitter oscillator frequency signal.
Abstract:
A high-performance integrable tunable inductor includes a "primary" coil and a "drive" coil placed in close proximity to each other and simultaneously driven with primary and drive currents, respectively. The drive current induces mutual components of inductance in the primary coil which vary with the phase and amplitude relationship between the two currents. These relationships are controlled to precisely establish the impedance of the primary coil, allowing the inductor to be "tuned" to provide a desired inductance or resistance by simply varying the phase and amplitude relationships appropriately. Inductance values tunable over ranges of about 2:1 and Q values of nearly 2000 have been demonstrated. The primary coil can also be made to operate as a relatively large integrated capacitance by setting the phase and amplitude relationships appropriately. The tunable inductor can be fabricated with standard CMOS processes, or any of a number of other processing technologies, and thus integrated into a host of analog circuits for which a highly-integrated implementation is desirable.
Abstract:
A monolithically integrated switched capacitor bank using MEMS technology that is capable of handling GHz signal frequencies in both the RF and millimeter bands while maintaining precise digital selection of capacitor levels over a wide tuning range. Each MEMS switch includes a cantilever arm that is affixed to the substrate and extends over a ground line and a gapped signal line. An electrical contact is formed on the bottom of the cantilever arm positioned above and facing the gap in the signal line. A top electrode atop the cantilever arm forms a control capacitor structure above the ground line. A capacitor structure, preferably a MEMS capacitor suspended above the substrate at approximately the same height as the cantilever arm, is anchored to the substrate and connected in series with a MEMS switch. The MEMS switch is actuated by applying a voltage to the top electrode, which produces an electrostatic force that attracts the control capacitor structure toward the ground line, thereby causing the electrical contact to close the gap in the signal line and connect the MEMS capacitor structure between a pair of output terminals. The integrated MEMS switch-capacitor pairs have a large range between their on-state and off-state impedance, and thus exhibit superior isolation and insertion loss characteristics.
Abstract:
A voltage controlled oscillator (10) operable on two widely separated frequency bands of 800 MHz and 1.9 GHz, for example. The two operable frequency modes are controlled by changing base bias voltages on at least two transistors with commonly connected emitters. A base circuit of each transistor is connected to an independent resonator and tuning element and shares a common feedback reactance. By increasing a base bias voltage of first transistor relative the a second transistor, an associated first base circuit is turned on and allowed to oscillate at a first frequency while a second base circuit is turned off preventing oscillation at a second frequency. Correspondingly, by decreasing the base bias voltage the first base circuit is turned off and the second base circuit is turned on. The transistors share a common collector connection and output providing either one of the two frequencies.