公开(公告)号：US20030143495A1

公开(公告)日：2003-07-31

申请号：US10309797

申请日：2002-12-04

发明人： Norio Ishikawa ,  Takuo Oowada

IPC分类号： G03F007/42

CPC分类号： G03F7/422

摘要： The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulating film etc. This is made possible by a photoresist residue removing liquid composition containing one or more members selected from the group consisting of reducing compounds and their salts and one or more members selected from the group consisting of aliphatic polycarboxylic acids and their salts.

摘要翻译： 本发明的目的是在制造半导体电路元件时，提供在干蚀刻之后除去光致抗蚀剂残留物而不攻击布线材料或层间绝缘膜等的光刻胶残渣除去液体组合物。 通过含有一种或多种选自还原化合物及其盐以及一种或多种选自脂肪族多元羧酸及其盐的成分的成分的光致抗蚀剂残渣除去液组合物。

公开(公告)号：US20030138710A1

公开(公告)日：2003-07-24

申请号：US10276714

申请日：2002-11-18

发明人： Mi-Sun Park ,  Jong-Min Kim ,  Tae-Joon Park ,  Cheol-Woo Kang ,  Yoon-Gil Yim

IPC分类号： G03F007/42

CPC分类号： G01N21/359 ,  G01N21/3563 ,  G03F7/422 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31133

摘要： In a method of controlling a photoresist stripping process for fabricating a semiconductor device or a liquid crystal display device, the composition of the stripper used in stripping the photoresist layer is first analyzed with the NIR spectrometer. The state of the stripper is then determined by comparing the analyzed composition with the reference composition. In case the life span of the stripper comes to an end, the stripper is replaced with a new stripper. By contrast, in case the life span of the stripper is left over, the stripper is delivered to the next photoresist stripping process. This analysis technique may be applied to the photoresist stripper regenerating process in a similar way.

摘要翻译： 在控制用于制造半导体器件或液晶显示器件的光致抗蚀剂剥离工艺的方法中，首先用NIR光谱仪分析用于剥离光致抗蚀剂层的剥离器的组成。 然后通过将分析的组合物与参考组合物进行比较来确定汽提器的状态。 如果汽提器的使用寿命终止，则剥离器将被新的汽提器更换。 相比之下，在汽提器的使用寿命剩余的情况下，汽提器被输送到下一个光刻胶剥离工艺。 该分析技术可以以类似的方式应用于光致抗蚀剂剥离器再生过程。

公开(公告)号：US20030099908A1

公开(公告)日：2003-05-29

申请号：US10231136

申请日：2002-08-30

发明人： Shigeru Yokoi ,  Kazumasa Wakiya

IPC分类号： G03F007/42 ,  C25F001/00 ,  B08B006/00

CPC分类号： G03F7/422 ,  C11D7/265 ,  C11D7/3218 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/425

摘要： A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues.

摘要翻译： 一种光致抗蚀剂剥离溶液，其包含（a）含羧基的酸性化合物，（b）至少一种选自烷醇胺和特定季铵氢氧化物的碱性化合物（例如单乙醇胺，四烷基铵），（c）含硫腐蚀 抑制剂和（d）水，pH值为3.5-5.5; 并公开了使用其剥离光致抗蚀剂的方法。 本发明提供一种光刻胶剥离溶液，其保护金属布线（特别是铜布线）不受腐蚀的影响，不会损害诸如低电介质层或有机SOG层的层间膜，并且显示出优异的光致抗蚀剂剥离性 和后灰化残留物。

公开(公告)号：US20030068579A1

公开(公告)日：2003-04-10

申请号：US10144025

申请日：2002-05-14

申请人： Kabushiki Kaisha Toshiba

发明人： Riichiro Takahashi ,  Kei Hayasaki ,  Tomoyuki Takeishi ,  Shinichi Ito

IPC分类号： G03F007/32 ,  G03F007/38 ,  G03F007/42 ,  G03D005/04 ,  C03C023/00 ,  B08B003/00 ,  G03B007/00 ,  C11D003/00

CPC分类号： H01L21/31133 ,  G03F7/3021 ,  G03F7/322 ,  G03F7/422 ,  G03F7/425

摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

摘要翻译： 一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

公开(公告)号：US20030049570A1

公开(公告)日：2003-03-13

申请号：US10236921

申请日：2002-09-09

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F007/30 ,  G03F007/42

CPC分类号： G03F7/322

摘要： In the pattern formation method of the invention, a resist film made of a chemically amplified resist is formed on a substrate. The resist film is selectively exposed to light for pattern exposure. The pattern-exposed resist film is subjected to a developer, and the resultant resist film is rinsed with an alkaline rinsing liquid to form a resist pattern made of the resist film.

摘要翻译： 在本发明的图案形成方法中，在基板上形成由化学放大型抗蚀剂构成的抗蚀剂膜。 抗蚀剂膜选择性地暴露于光以进行图案曝光。 对图案曝光的抗蚀剂膜进行显影，并且用碱性漂洗液冲洗所得的抗蚀剂膜，以形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US20020187422A1

公开(公告)日：2002-12-12

申请号：US10165582

申请日：2002-06-07

申请人： International Business Machines Corporation

发明人： Marie Angelopoulos ,  Ari Aviram ,  C. Richard Guarnieri ,  Wu-Song Huang ,  Ranee Kwong ,  Wayne M. Moreau

IPC分类号： G03F007/30 ,  G03F007/36 ,  G03F007/42 ,  G03F007/213 ,  G03C001/72 ,  G03C001/795 ,  G03C001/825 ,  G03C001/83 ,  G03C001/835

CPC分类号： C08G77/20 ,  C08G77/38 ,  G03F7/0757 ,  G03F7/091 ,  Y10S430/151

摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.

公开(公告)号：US20020127500A1

公开(公告)日：2002-09-12

申请号：US10045062

申请日：2002-01-15

发明人： Sang-Sik Moon ,  Mi-Sook Jeon ,  Pil-Kwon Jun ,  June-Ing Kil ,  Je-Eung Park ,  Sang-Mun Chun

IPC分类号： G03F007/42

CPC分类号： C11D7/5022 ,  C11D11/0047 ,  G03F7/422 ,  H01L21/31133

摘要： A photoresist stripper composition is formed of a mixture of acetone, null-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.

摘要翻译： 光致抗蚀剂剥离剂组合物由丙酮，γ-丁内酯和酯溶剂的混合物形成。 光致抗蚀剂剥离方法包括在基板以相对低的速度旋转的同时将光致抗蚀剂剥离剂组合物喷涂在基板上，以便从基板剥离光致抗蚀剂。 基板的旋转停止一段时间，然后在较高速度旋转基板的同时将光致抗蚀剂剥离剂组合物再次喷涂在基板上。 然后，用纯水冲洗基材。

公开(公告)号：US20020068244A1

公开(公告)日：2002-06-06

申请号：US09946313

申请日：2001-09-05

申请人： Huntsman Petrochemical Corporation

发明人： James R. Machac JR. ,  Edward T. Marquis ,  Wheeler C. Crawford

IPC分类号： G03F007/42 ,  C11D003/00 ,  C11D017/00

CPC分类号： G03F7/423 ,  G03F7/422

摘要： The present invention is directed toward effective photoresist stripping compositions that are less corrosive and do not cause skin irritation. One form of the present invention is a composition useful as a photoresist remover that includes an alkylene carbonate, and one or more additional components chosen from the group that includes alkyl hydrogen peroxides, hydroxyalkyl ureas, urea-hydrogen peroxides, N-substituted morpholines and alcohols. Another form of the present invention is a composition for removing photoresist from a surface that includes an N-substituted morpholine.

公开(公告)号：US20020048731A1

公开(公告)日：2002-04-25

申请号：US09389788

申请日：1999-09-03

发明人： WILLIAM H MULLEE

IPC分类号： G03F007/42

CPC分类号： G03F7/422 ,  H01L21/31133

摘要： A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

摘要翻译： 公开了从半导体衬底去除光致抗蚀剂或光致抗蚀剂残留物的方法。 在半导体衬底的表面上具有光致抗蚀剂或光致抗蚀剂残留物的半导体衬底置于压力室内。 然后将压力室加压。 将超临界二氧化碳和汽提化学物质引入压力室。 超临界二氧化碳和汽提化学物质保持与光致抗蚀剂或光致抗蚀剂残留物接触，直到从半导体衬底去除光致抗蚀剂或光致抗蚀剂残留物。 然后将压力室冲洗并排空。

公开(公告)号：US20040099284A1

公开(公告)日：2004-05-27

申请号：US10614244

申请日：2003-07-08

发明人： Nobuhiro Miki ,  Takahisa Nitta

IPC分类号： B08B003/00 ,  B08B007/00 ,  G03F007/40 ,  B08B003/12 ,  G03F007/42

CPC分类号： H01L21/6715 ,  B08B3/00 ,  B08B3/02 ,  B08B7/0057 ,  B08B2203/0288 ,  B08B2230/01 ,  G03F7/422 ,  G03F7/427 ,  Y10T156/11 ,  Y10T156/1116 ,  Y10T156/1121

摘要： A line slit nozzle for spraying steam is disposed along a diameter of a resist film. Steam containing a mist is sprayed onto a surface of the resist film. The film is thereby peeled off and removed. By using a change in physical properties (swelling, etc.) of the resist film by water, the film is easily and surely peeled off. Breakaway from much resources/energy consumption type techniques is realized. In other words, realized are environment-symbiosis type techniques by which resist films can be removed independently of the quantity of energy and kinds of chemical solvents.

摘要翻译： 沿着抗蚀剂膜的直径设置用于喷射蒸汽的线狭缝喷嘴。 含有雾的蒸汽喷涂在抗蚀膜的表面上。 由此剥离和除去膜。 通过使用水的抗蚀剂膜的物理性质（溶胀等）的变化，膜容易且可靠地剥离。 实现了大量资源/能源消耗类型技术的分离。 换句话说，实现了环境共生型技术，通过其可以独立于能量和化学溶剂的种类去除抗蚀剂膜。