Method for manufacturing a device on a substrate
    32.
    发明授权
    Method for manufacturing a device on a substrate 有权
    在基板上制造器件的方法

    公开(公告)号:US08999187B2

    公开(公告)日:2015-04-07

    申请号:US14092624

    申请日:2013-11-27

    IPC分类号: C03C15/00 H01L41/297 H03H3/04

    CPC分类号: H01L41/297 H03H3/04

    摘要: A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.

    摘要翻译: 在衬底上制造器件的方法包括在衬底上形成层结构,在层结构上形成辅助层,在辅助层和衬底上形成平坦化层,通过化学机械抛光工艺使辅助层露出 以及至少部分去除所述辅助层以形成剩余辅助层或所述层结构和所述平坦化层的平坦表面。 化学机械抛光工艺相对于平坦化层具有第一去除速率,相对于辅助层具有第二去除速率,并且第一去除速率大于第二去除速率。

    PIEZOPOLYMER TRANSDUCER WITH MATCHING LAYER
    33.
    发明申请
    PIEZOPOLYMER TRANSDUCER WITH MATCHING LAYER 有权
    具有匹配层的PIEZOPOLYMER传感器

    公开(公告)号:US20150044386A1

    公开(公告)日:2015-02-12

    申请号:US14028578

    申请日:2013-09-17

    申请人: DVX, LLC

    摘要: Matching layers improve the performance of ultrasonic transducers. Such layers have traditionally required significant effort and expense to be added to ultrasonic transducers. The present invention discloses a method of producing ultrasonic transducers with a matching layer, specifically for ultrasonic transducers utilizing piezopolymer transducer materials. Rather than the conventional method of forming the piezopolymer on a substrate and then attaching a matching layer through which the transducer emits its ultrasound energy, we teach depositing the piezopolymer on a substrate that also serves as a matching layer through which the ultrasound is emitted. We also teach depositing an additional shield layer for reducing electromagnetic interference. Methods of how to select materials and modify their ultrasonic characteristics are also discussed.

    摘要翻译: 匹配层提高超声波换能器的性能。 这些层传统上需要大量的努力和费用才能添加到超声换能器中。 本发明公开了一种制造具有匹配层的超声波换能器的方法,特别涉及使用压电聚合物换能器材料的超声换能器。 而不是在基片上形成压电聚合物的常规方法,然后附加换能器通过该匹配层发射其超声能量的匹配层,我们教导了将压电聚合物沉积在也用作发射超声波的匹配层的基底上。 我们还教导了放置一个额外的屏蔽层,以减少电磁干扰。 还讨论了如何选择材料和修改其超声波特性的方法。

    Method for Manufacturing a Device on a Substrate
    34.
    发明申请
    Method for Manufacturing a Device on a Substrate 审中-公开
    在基板上制造器件的方法

    公开(公告)号:US20140083973A1

    公开(公告)日:2014-03-27

    申请号:US14092624

    申请日:2013-11-27

    IPC分类号: H01L41/297

    CPC分类号: H01L41/297 H03H3/04

    摘要: A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.

    摘要翻译: 在衬底上制造器件的方法包括在衬底上形成层结构,在层结构上形成辅助层,在辅助层和衬底上形成平坦化层,通过化学机械抛光工艺使辅助层露出 以及至少部分去除所述辅助层以形成剩余辅助层或所述层结构和所述平坦化层的平坦表面。 化学机械抛光工艺相对于平坦化层具有第一去除速率,相对于辅助层具有第二去除速率,并且第一去除速率大于第二去除速率。

    VOLTAGE BREAKDOWN UNIFORMITY IN PIEZOELECTRIC STRUCTURE FOR PIEZOELECTRIC DEVICES

    公开(公告)号:US20220344575A1

    公开(公告)日:2022-10-27

    申请号:US17241620

    申请日:2021-04-27

    摘要: In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.