Method of purifying alkaline solution and method of etching
semiconductor wafers
    31.
    发明授权
    Method of purifying alkaline solution and method of etching semiconductor wafers 失效
    碱性溶液的净化方法及蚀刻半导体晶片的方法

    公开(公告)号:US6110839A

    公开(公告)日:2000-08-29

    申请号:US703645

    申请日:1996-08-27

    CPC分类号: C01D1/28

    摘要: A method of purifying an alkaline solution includes dissolving metallic silicon and/or silicon compounds in the alkaline solution and non-ionizing metallic ions in the alkaline solution with reaction products generated when the metallic silicon and/or silicon compounds are dissolved therein. This purifying method is capable of remarkably decreasing metallic ions in the alkaline solution at a low-cost by an easy operation. A method of etching semiconductor wafers includes purifying an alkaline solution by non-ionizing metallic ions in the alkaline solution and etching the semiconductor wafers by using the purified alkaline solution. According to this etching method, the metallic contamination level due to the etching of the semiconductor wafers is greatly decreased, there being neither deterioration in the wafer quality nor deterioration in the characteristic of the semiconductor device.

    摘要翻译: 纯化碱性溶液的方法包括在金属硅和/或硅化合物溶解时产生的反应产物将金属硅和/或硅化合物溶解在碱性溶液中,并在碱性溶液中溶解非电离金属离子。 该纯化方法能够通过简单的操作以低成本显着降低碱性溶液中的金属离子。 蚀刻半导体晶片的方法包括通过在碱性溶液中非离子化金属离子来纯化碱性溶液,并通过使用纯化的碱性溶液蚀刻半导体晶片。 根据该蚀刻方法,由于半导体晶片的蚀刻而导致的金属污染程度大大降低,晶片质量不会降低,也不会降低半导体器件的特性。

    Two-stage flotation purification of NaOH
    33.
    发明授权
    Two-stage flotation purification of NaOH 失效
    NaOH两步浮选纯化

    公开(公告)号:US4273657A

    公开(公告)日:1981-06-16

    申请号:US48589

    申请日:1979-06-14

    摘要: A process for purifying an aqueous solution of NaOH by removing suspended NaCl and Na.sub.2 SO.sub.4 impurities therefrom comprising bubbling a gas into the impurity-containing NaOH solution at a first stage temperature above 16.degree. C. up to 31.degree. C. and at a second stage temperature above 31.degree. C. up to about 36.degree. C., separating a foam layer containing NaCl and Na.sub.2 SO.sub.4 from NaOH at the first stage and a foam layer containing Na.sub.2 SO.sub.4 from NaOH at the second stage.

    摘要翻译: 通过除去悬浮的NaCl和Na 2 SO 4杂质来净化NaOH水溶液的方法,包括在高于16℃至31℃的第一阶段温度下将气体鼓泡到含杂质的NaOH溶液中,并在第二阶段温度 高于31℃至约36℃,在第一阶段从NaOH分离含有NaCl和Na 2 SO 4的泡沫层,在第二阶段从NaOH中分离含有Na 2 SO 4的泡沫层。

    Process for desalting an aqueous caustic solution
    34.
    发明授权
    Process for desalting an aqueous caustic solution 失效
    脱盐水苛性碱溶液的方法

    公开(公告)号:US4235717A

    公开(公告)日:1980-11-25

    申请号:US944688

    申请日:1978-09-22

    CPC分类号: C01D1/28 B01J41/043 B01J41/14

    摘要: Ion retardation resins particularly useful for desalting caustic solutions are prepared by employing ion exchange resins consisting essentially of a mixture of a reticular, insoluble, cross-linked styrene/divinylbenzene copolymer with an entrapped non-leachable polymer of acrylic acid contained therein and where the amount of carboxylic acid groups on the polyacrylic acid are in substantial excess over the amount needed to react with all the quaternary ammonium groups which are nuclear substituted on the styrene copolymer chains.

    摘要翻译: 特别适用于脱盐苛性碱溶液的离子延迟树脂通过使用基本上由网状,不溶性,交联的苯乙烯/二乙烯基苯共聚物与其中所含的包含丙烯酸的截留的不可浸出聚合物的混合物组成的离子交换树脂来制备, 的聚丙烯酸上的羧酸基团相对于在苯乙烯共聚物链上被核取代的所有季铵基团反应所需的量相当大。

    Process for purifying sodium hydroxide
    35.
    发明授权
    Process for purifying sodium hydroxide 失效
    纯化氢氧化钠的方法

    公开(公告)号:US4065270A

    公开(公告)日:1977-12-27

    申请号:US677754

    申请日:1976-04-16

    摘要: An aqueous solution of sodium hydroxide containing soluble impurities such as a concentrated catholyte produced by a diaphragm electrolysis is cooled by a coolant or a heat-exchanger to form a slurry containing sodium hydroxide hydrate crystals and fine impurity crystals. The fine impurity crystals are adsorbed on bubbles which are formed by vaporizing a dissolved coolant or introducing a gas in the slurry and separated from the slurry.

    摘要翻译: 通过隔膜电解产生的含有可溶性杂质如浓缩阴极电解液的氢氧化钠水溶液由冷却剂或热交换器冷却,形成含有氢氧化钠水合物晶体和微细杂质晶体的浆料。 精细的杂质晶体吸附在通过汽化溶解的冷却剂或在浆料中引入气体并与浆料分离而形成的气泡上。