MULTI-AXIS LASER DRILLING FOR WAFER-LEVEL PACKAGING

    公开(公告)号:US20240429095A1

    公开(公告)日:2024-12-26

    申请号:US18733373

    申请日:2024-06-04

    Inventor: Shei Meng LOO

    Abstract: A method of relocation of input/output (I/O) contact pads in a wafer-level package is provided. A method of manufacturing a wafer-level package can include: forming a redistribution layer on a wafer having a contact pad disposed thereon, where the wafer defines a plane along a major horizontal surface on which the contact pad is disposed; drilling, with a multi-axis laser drill, a hole along an axis through the redistribution layer to reach the contact pad, where the axis of the hole through the redistribution layer is at an angle relative to the plane that is neither parallel nor orthogonal; and forming a contact extending from the contact pad, through the hole through the redistribution layer, to a position on the redistribution layer.

    POWER REDUCTION AND EFFECTIVE TIMING EXCEPTIONS HANDLING IN AT-SPEED CAPTURE

    公开(公告)号:US20240427366A1

    公开(公告)日:2024-12-26

    申请号:US18337720

    申请日:2023-06-20

    Abstract: According to an embodiment, a method for testing a scan chain is provided. The method includes receiving a first clock signal and a first scan enable signal and generating a second and third clock signal based on the first clock signal and the first scan enable signal. The third clock signal is delayed by a clock pulse from the second clock signal. The first, second, and third clock signal have the same duty cycle. The method further includes providing the second clock signal and the second scan enable signal to, respectively, a clock terminal and scan enable input of a first scan flip-flop of the scan chain. The method further includes providing the third clock signal and a third scan enable signal to, respectively, a clock terminal and a scan enable input of a last scan flip-flop of the scan chain.

    HIGH-VOLTAGE BIDIRECTIONAL SWITCH DEVICE WITH IMPROVED ELECTRICAL CHARACTERISTICS

    公开(公告)号:US20240421809A1

    公开(公告)日:2024-12-19

    申请号:US18740272

    申请日:2024-06-11

    Abstract: A switch device is described, formed by: a first switch MOS transistor, with its drain terminal connected to a first switch terminal, source terminal connected to an internal source node and gate terminal connected to an internal gate node; a second switch MOS transistor, with its drain terminal connected to a second switch terminal, source terminal connected to the internal source node and gate terminal connected to the internal gate node; and a voltage limiting element connected between the internal gate and source nodes. A driving stage, voltage-referred to the internal source node, drives the switching of the bidirectional switch, as a function a first and a second driving signals, and has a driving transistor and a switching transistor connected to each other in inverter configuration.

    CLOSED LOOP STABILITY RAMP IMPLEMENTATION FOR CONSTANT ON-TIME BUCK CONVERTER

    公开(公告)号:US20240421691A1

    公开(公告)日:2024-12-19

    申请号:US18334757

    申请日:2023-06-14

    Abstract: An integrated circuit device includes: one or more switches of a Buck converter; and a control circuit for the Buck converter, including: a comparator configured to compare a feedback voltage of the Buck converter with a compensation ramp voltage; a pulse generator configured to generate, in response to a rising edge in a comparator output signal, a pulse signal for controlling the Buck converter; a transconductance amplifier (TA) configured to generate, at an output terminal of the TA, a current proportional to a difference between a reference voltage and the feedback voltage; a capacitor coupled between an output terminal of the TA and a reference voltage node; and a ramp signal generator configured to generate the compensation ramp voltage by adding a voltage at the output terminal of the TA and a ramp voltage having a gradient proportional to a switching frequency of the Buck converter.

    METHOD AND APPARATUS FOR DETECTING POWER-ON RESET THRESHOLD

    公开(公告)号:US20240402241A1

    公开(公告)日:2024-12-05

    申请号:US18203737

    申请日:2023-05-31

    Abstract: Disclosed herein is a testing circuit for indirectly testing generation of a power-on-reset signal within an integrated circuit (IC). The testing circuit includes a switch configured to selectively disconnect an internal circuit from a test pin of the IC in response to start-up of the IC, a plurality of resistors connected between the test pin and a respective plurality of switches that are configured to selectively connect ones of the plurality of resistors to ground in response to corresponding control signals, and a control circuit configured to produce, at the test pin, a resistance indicative of status of generation of the POR signal by selectively operating the plurality of switches based upon statuses of a plurality of signals from which the POR signal is generated.

    PROXIMITY SENSING DEVICE
    458.
    发明申请

    公开(公告)号:US20240385323A1

    公开(公告)日:2024-11-21

    申请号:US18648988

    申请日:2024-04-29

    Abstract: A proximity sensing device includes a proximity sensor including a light source, a light detector including a first photodiode adapted to generate a first signal, and a second photodiode adapted to generate a second signal, the second photodiode and the light source being separated from the first photodiode with a separator. The proximity sensing device further includes a selecting circuit adapted to compare the first signal to the second signal, and to select a signal from the first and second signals according to the executed comparison.

    Non-volatile memory cell with single poly, floating gate extending over two wells

    公开(公告)号:US12148473B2

    公开(公告)日:2024-11-19

    申请号:US17697846

    申请日:2022-03-17

    Abstract: In an embodiment a non-volatile memory cell includes a substrate, a first body in the substrate, a second body in the substrate, a first storage transistor having a first conduction region and a second conduction region in the first body, the first and second conduction regions delimiting a first channel region in the first body, a first control gate region in the second body, an insulating region overlying the substrate, a single floating gate region extending on the substrate and embedded in the insulating region, the single floating gate region having a first portion on the first body and a second portion on the second body, the first portion and second portion being connected and electrically coupled, a first selection via extending through the insulating region and electrically coupling the first conduction region with a first conduction node, a second selection via extending through the insulating region and electrically coupling the second conduction region with a second conduction node and a first control via extending though the insulating region and electrically coupling the first control gate region with a first control node.

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