Barrier slurry for low-k dielectrics
    41.
    发明申请
    Barrier slurry for low-k dielectrics 有权
    用于低k电介质的阻隔浆料

    公开(公告)号:US20100075502A1

    公开(公告)日:2010-03-25

    申请号:US12584343

    申请日:2009-09-03

    IPC分类号: H01L21/304 C09K13/00

    摘要: The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

    摘要翻译: 本发明提供了一种用于抛光基材的化学机械抛光组合物。 抛光组合物包括二氧化硅,选自胺取代的硅烷,四烷基铵盐,四烷基鏻盐和咪唑鎓盐的化合物,具有七个或更多个碳原子的羧酸,氧化金属的氧化剂 ,和水。 本发明还提供了用上述抛光组合物对衬底进行化学机械抛光的方法。

    METHOD OF POLISHING NICKEL-PHOSPHOROUS
    42.
    发明申请
    METHOD OF POLISHING NICKEL-PHOSPHOROUS 有权
    抛光镍 - 磷光体的方法

    公开(公告)号:US20100009537A1

    公开(公告)日:2010-01-14

    申请号:US12170954

    申请日:2008-07-10

    IPC分类号: H01L21/461

    摘要: The invention is directed to a method of chemically-mechanically polishing a a surface of a substrate, comprising contacting a surface of a substrate comprising nickel-phosphorous with a chemical-mechanical polishing composition comprising wet-process silica, an agent that oxidizes nickel-phosphorous, and an aminopolycarboxylic acid, wherein the polishing composition has a pH of about 1 to about 5, and abrading at least a portion of the nickel-phosphorous to polish the substrate.

    摘要翻译: 本发明涉及一种对基底表面进行化学机械抛光的方法,包括使包含镍 - 磷的基底的表面与包含湿法二氧化硅的化学机械抛光组合物接触,氧化镍 - 磷的试剂, 和一种氨基多羧酸,其中所述抛光组合物具有约1至约5的pH,并且研磨所述镍 - 磷的至少一部分以抛光所述基材。

    CMP method for improved oxide removal rate
    43.
    发明申请
    CMP method for improved oxide removal rate 审中-公开
    CMP方法提高氧化物去除率

    公开(公告)号:US20090191710A1

    公开(公告)日:2009-07-30

    申请号:US12384161

    申请日:2009-04-01

    IPC分类号: H01L21/461

    CPC分类号: C09G1/02 H01L21/31053

    摘要: The invention provides a method for the chemical-mechanical polishing of a substrate with a chemical-mechanical polishing composition that comprises an abrasive, a halide salt, water and a polishing pad.

    摘要翻译: 本发明提供了一种用化学机械抛光组合物进行化学机械抛光的方法,该组合物包括研磨剂,卤化物盐,水和抛光垫。

    X-ray source with nonparallel geometry
    44.
    发明授权
    X-ray source with nonparallel geometry 失效
    具有非平行几何形状的X射线源

    公开(公告)号:US07542549B2

    公开(公告)日:2009-06-02

    申请号:US11779752

    申请日:2007-07-18

    IPC分类号: H01J35/14 H01J35/06 H01J35/30

    摘要: An improved x-ray generation system produces a converging or diverging radiation pattern particularly suited for substantially cylindrical or spherical treatment devices. In an embodiment, the system comprises a closed or concave outer wall about a closed or concave inner wall. An electron emitter is situated on the inside surface of the outer wall, while a target film is situated on the outside surface of the inner wall. An extraction voltage at the emitter extracts electrons which are accelerated toward the inner wall by an acceleration voltage. Alternately, electron emission may be by thermionic means. Collisions of electrons with the target film causes x-ray emission, a substantial portion of which is directed through the inner wall into the space defined within. In an embodiment, the location of the emitter and target film are reversed, establishing a reflective rather than transmissive mode for convergent patterns and a transmissive mode for divergent patterns.

    摘要翻译: 改进的X射线产生系统产生特别适用于基本上圆柱形或球形处理装置的会聚或发散辐射图。 在一个实施例中,系统包括围绕封闭或凹入的内壁的封闭或凹入的外壁。 电子发射体位于外壁的内表面上,而靶膜位于内壁的外表面上。 发射极处的提取电压提取通过加速电压向内壁加速的电子。 或者,电子发射可以通过热电子方式。 电子与目标膜的碰撞导致x射线发射,其大部分被引导通过内壁进入限定在其内的空间。 在一个实施例中,发射器和目标膜的位置被反转,建立用于会聚图案的反射而不是透射模式和用于发散图案的透射模式。

    CMP composition comprising surfactant
    45.
    发明授权
    CMP composition comprising surfactant 有权
    包含表面活性剂的CMP组合物

    公开(公告)号:US07524347B2

    公开(公告)日:2009-04-28

    申请号:US10975585

    申请日:2004-10-28

    IPC分类号: C09G1/02 C09G1/04 B24B1/00

    摘要: The invention provides a polishing composition comprising fumed alumina, alpha alumina, silica, a nonionic surfactant, a metal chelating organic acid, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, and abrading at least a portion of the substrate to polish the substrate.

    摘要翻译: 本发明提供了一种抛光组合物,其包含热解法氧化铝,α氧化铝,二氧化硅,非离子表面活性剂,金属螯合有机酸和液体载体。 本发明还提供了一种化学机械抛光衬底的方法,包括使衬底与抛光垫和化学 - 机械抛光组合物接触,并研磨至少一部分衬底以抛光衬底。

    METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC
    47.
    发明申请
    METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC 有权
    抛光含硅介质的方法

    公开(公告)号:US20090029633A1

    公开(公告)日:2009-01-29

    申请号:US12239249

    申请日:2008-09-26

    IPC分类号: B24B1/00 B24B7/00

    摘要: A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKa of about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.

    摘要翻译: 一种化学机械抛光系统,包括:(a)具有约180nm或更小的平均粒度和正ζ电位的二氧化铈磨料,(b)具有pKa约3至约9的官能团的抛光添加剂, 其中所述抛光添加剂选自芳基胺,氨基醇,脂族胺,杂环胺,异羟肟酸,氨基羧酸,环状单羧酸,不饱和一元羧酸,取代的苯酚,磺酰胺,硫醇,其盐及其组合,以及 (c)液体载体,其中所述化学机械抛光系统具有约4至约6的pH。

    Decontamination and sterilization system using large area x-ray source
    48.
    发明授权
    Decontamination and sterilization system using large area x-ray source 有权
    消毒灭菌系统采用大面积X射线源

    公开(公告)号:US07447298B2

    公开(公告)日:2008-11-04

    申请号:US11241214

    申请日:2005-09-30

    IPC分类号: H01J35/04

    摘要: A novel x-ray treatment system utilizes one or more large area flat panel sources of x-ray radiation directed into a target zone. A target substance within the target zone is irradiated with x-ray radiation from the one or more flat panel sources, reducing the biological effects of a contaminant presence therein. The flat panel source comprises an electron source, an electron accelerator, and an electron target medium. The electron source may emit electrons either via field emission or thermionic emission. The x-ray source may operate in transmissive, reflective, or combined transmissive/reflective mode. The use of large area flat panel x-ray sources in the inventive systems allows for decreased installation and operational costs as well as increased efficiency.

    摘要翻译: 一种新型的X射线处理系统利用一个或多个大面积平板的X射线辐射源引导到目标区域。 目标区域内的目标物质被来自一个或多个平板光源的x射线辐射照射,减少了其中污染物存在的生物效应。 平板源包括电子源,电子加速器和电子目标介质。 电子源可以通过场发射或热离子发射发射电子。 x射线源可以以透射,反射或组合透射/反射模式工作。 在本发明的系统中使用大面积平板X射线源允许降低安装和操作成本以及提高效率。

    Method of polishing a silicon-containing dielectric
    49.
    发明授权
    Method of polishing a silicon-containing dielectric 有权
    抛光含硅电介质的方法

    公开(公告)号:US07442645B2

    公开(公告)日:2008-10-28

    申请号:US10543848

    申请日:2004-02-02

    IPC分类号: H01L21/302

    摘要: The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The inventive chemical-mechanical polishing system comprises (a) ceria, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing system has a pH of about 4 to about 6.

    摘要翻译: 本发明的抛光含硅介电层的方法涉及使用化学机械抛光系统,其包括(a)无机磨料,(b)抛光添加剂和(c)液体载体,其中所述抛光组合物具有 本发明的化学机械抛光系统包括(a)二氧化铈,(b)抛光添加剂和(c)液体载体,其中抛光系统的pH为约4至约6。

    Transparent microporous materials for CMP
    50.
    发明授权
    Transparent microporous materials for CMP 有权
    透明微孔材料用于CMP

    公开(公告)号:US07435165B2

    公开(公告)日:2008-10-14

    申请号:US10282489

    申请日:2002-10-28

    申请人: Abaneshwar Prasad

    发明人: Abaneshwar Prasad

    IPC分类号: B24D11/00 B24D5/00 B24B1/00

    CPC分类号: B24B37/24

    摘要: The invention is directed to a chemical-mechanical polishing pad substrate comprising a porous material having an average pore size of about 0.01 microns to about 1 micron. The polishing pad substrate has a light transmittance of about 10% or more at at least one wavelength of about 200 nm to about 35,000 nm. The invention is further directed to a polishing pad comprising the polishing pad substrate, a method of polishing comprising the use of the polishing pad substrate, and a chemical-mechanical apparatus comprising the polishing pad substrate.

    摘要翻译: 本发明涉及包含平均孔径为约0.01微米至约1微米的多孔材料的化学机械抛光垫基材。 抛光垫基板在约200nm至约35,000nm的至少一个波长处具有约10%以上的透光率。 本发明还涉及包括抛光垫基板的抛光垫,包括使用抛光垫基板的抛光方法以及包括抛光垫基板的化学机械装置。