Carbon nanotube-based electronic switch
    1.
    发明授权
    Carbon nanotube-based electronic switch 失效
    基于碳纳米管的电子开关

    公开(公告)号:US07456482B2

    公开(公告)日:2008-11-25

    申请号:US11084287

    申请日:2005-03-18

    IPC分类号: H01H59/00

    摘要: An improved microelectromechanical switch assembly comprises a linearly movable switch rod constrained via a switch bearing, the switch rod being actuated by electrostatic deflection. Movement of the switch rod to one end of its travel puts the switch assembly in a closed state while movement of the switch rod to the other end of its travel puts the switch assembly in an open state. In an embodiment of the invention, one or both of the switch rod and the switch bearing are fabricated of a carbon nanotube. The improved microelectromechanical switch assembly provides low insertion loss and long lifetime in an embodiment of the invention.

    摘要翻译: 改进的微机电开关组件包括通过开关轴承限制的线性可移动开关杆,开关杆由静电偏转致动。 开关杆移动到其行程的一端时,开关组件处于关闭状态,而开关杆移动到其行程的另一端则使开关组件处于打开状态。 在本发明的一个实施例中,开关杆和开关轴承中的一个或两个由碳纳米管制成。 改进的微机电开关组件在本发明的实施例中提供低插入损耗和长寿命。

    Method of operating and process for fabricating an electron source
    2.
    发明授权
    Method of operating and process for fabricating an electron source 失效
    用于制造电子源的操作和处理方法

    公开(公告)号:US07317278B2

    公开(公告)日:2008-01-08

    申请号:US10763552

    申请日:2004-01-23

    申请人: Heinz H. Busta

    发明人: Heinz H. Busta

    IPC分类号: H01J1/62 H01J63/04

    摘要: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

    摘要翻译: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖,例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来,从棒的端部去除材料,并且绝缘层相对于场发射极层凹陷,使得在场发射极层和棒之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。

    Tiled electronic display structure
    3.
    发明授权
    Tiled electronic display structure 失效
    平铺电子显示结构

    公开(公告)号:US06897855B1

    公开(公告)日:2005-05-24

    申请号:US09250324

    申请日:1999-02-16

    摘要: A tiled display device is formed from display tiles having picture element (pixel) positions defined up to the edge of the tiles. Each pixel position has an organic light-emitting diode (OLED) active area which occupies approximately 25 percent of the pixel area. Each tile includes a memory which stores display data, and pixel driving circuitry which controls the scanning and illumination of the pixels on the tile. The pixel driving circuitry is located on the back side of the tile and connections to pixel electrodes on the front side of the tile are made by vias which pass through portions of selected ones of the pixel areas which are not occupied by the active pixel material. The tiles are to formed in two parts, an electronics section and a display section. Each of these parts includes connecting pads which cover several pixel positions. Each connecting pad makes an electrical connection to only one row electrode or column electrode. The connecting pads on the display section are electrically connected and physically joined to corresponding connecting pads on the electronics section to form a complete tile. Each tile has a glass substrate on the front of the tile. Black matrix lines are formed on the front of the glass substrate and the tiles are joined by mullions which have the same appearance as the black-matrix lines. Alternatively, the black matrix lines may be formed on the inside surface of an optical integrating plate and the tiles may be affixed to the integrating plate such that the edges of the joined tiles are covered by the black-matrix lines. A cathodoluminescent tile structure is formed from individual tiles that have multiple phosphor areas, a single emissive cathode and horizontal and vertical electrostatic deflecting grids which deflect the electron beam produced by the single cathode onto multiple ones of the phosphor areas.

    摘要翻译: 平铺显示装置由具有限定到瓦片边缘的像素(像素)位置的显示瓦片形成。 每个像素位置具有占据像素面积的约25%的有机发光二极管(OLED)有源区。 每个瓦片包括存储显示数据的存储器和控制瓦片上的像素的扫描和照明的像素驱动电路。 像素驱动电路位于瓦片的背面,并且与瓦片前侧的像素电极的连接通过穿过未被活性像素材料占据的所选像素区域的部分的通孔制成。 瓷砖要形成两部分,一个电子部分和一个显示部分。 这些部件中的每一个包括覆盖几个像素位置的连接焊盘。 每个连接焊盘只与一个行电极或列电极进行电连接。 显示部分上的连接焊盘电连接并物理地连接到电子部件上的对应的连接焊盘以形成完整的瓦片。 每个瓦片在瓦片的前面具有玻璃基底。 黑色矩阵线形成在玻璃基板的前面,并且瓦片通过具有与黑矩阵线相同外观的竖框连接。 或者,黑矩阵线可以形成在光学积分板的内表面上,并且可以将瓷砖固定到积分板,使得连接的瓷砖的边缘被黑矩阵线覆盖。 阴极发光瓦片结构由具有多个荧光体区域的单个瓦片形成,单个发射阴极和水平和垂直静电偏转网格,其将由单个阴极产生的电子束偏转到多个荧光体区域上。

    Method of making micromachined refractory metal field emitters
    6.
    发明授权
    Method of making micromachined refractory metal field emitters 失效
    制造微加工难熔金属场发射体的方法

    公开(公告)号:US4685996A

    公开(公告)日:1987-08-11

    申请号:US918034

    申请日:1986-10-14

    摘要: A method of making a field emitter includes anisotropically etching a single crystal silicon substrate to form at least one funnel-shaped protrusion on the substrate, then conformally depositing a refractory metal onto the funnel-shaped protrusion. Alternatively, single crystal silicon may be anisotropically etched to form at least one funnel-shaped recess in the silicon. The etched surface is doped with an impurity to form an etch-stop layer, the remaining undoped silicon is removed, then the etch-stop layer is conformally deposited with a refractory metal. The funnel-shaped recess can then be back-filled with silicon or another suitable material.

    摘要翻译: 制造场发射体的方法包括各向异性地蚀刻单晶硅衬底,以在衬底上形成至少一个漏斗形突起,然后将难熔金属共形沉积到漏斗形突起上。 或者,可以各向异性地蚀刻单晶硅以在硅中形成至少一个漏斗形凹部。 蚀刻的表面掺杂有杂质以形成蚀刻停止层,剩下的未掺杂的硅被去除,然后蚀刻停止层被共形沉积在难熔金属上。 然后可以用硅或另一种合适的材料来填充漏斗形凹部。

    X-RAY SOURCE WITH NONPARALLEL GEOMETRY
    7.
    发明申请
    X-RAY SOURCE WITH NONPARALLEL GEOMETRY 审中-公开
    X射线源与非对称几何

    公开(公告)号:US20090232279A1

    公开(公告)日:2009-09-17

    申请号:US12421239

    申请日:2009-04-09

    IPC分类号: H01J35/14

    摘要: An improved electron bombardment device includes a first tubular member for containing a target material and a second tubular member surrounding the first tubular member, leaving a space between the first and second tubular members. In an embodiment of the invention, the second tubular member is an electron emitting material, and the bombardment device includes a voltage application means for accelerating emitted electrons from the second tubular member towards the first tubular member. In a further embodiment of the invention, the second tubular member comprises a thermionic electron emitting material. In an alternative embodiment, the second tubular member comprises a field electron emitting material.

    摘要翻译: 改进的电子轰击装置包括用于容纳目标材料的第一管状构件和围绕第一管状构件的第二管状构件,在第一和第二管状构件之间留有空间。 在本发明的一个实施例中,第二管状构件是电子发射材料,并且该轰击装置包括用于加速从第二管状构件向第一管状构件发射的电子的电压施加装置。 在本发明的另一实施例中,第二管状构件包括热离子电子发射材料。 在替代实施例中,第二管状构件包括场电子发射材料。

    Fabrication of volcano-shaped field emitters by chemical-mechanical
polishing (CMP)
    8.
    发明授权
    Fabrication of volcano-shaped field emitters by chemical-mechanical polishing (CMP) 失效
    通过化学机械抛光(CMP)制造火山形场发射体

    公开(公告)号:US5930590A

    公开(公告)日:1999-07-27

    申请号:US908144

    申请日:1997-08-06

    申请人: Heinz H. Busta

    发明人: Heinz H. Busta

    IPC分类号: H01J9/02 H01L21/00

    CPC分类号: H01J9/025

    摘要: A method for fabrication of volcano-shaped field emitters forming low-cost, large area manufacturing of ungated and gated vertical field emitter arrays. Gate and emitter thin films are deposited onto a substrate on which arrays of posts have been previously fabricated. These conformal films cover the substrate, the sidewalls of the posts, and the post top surfaces or plateaus. By using chemical-mechanical polishing (CMP), some or all of the thin films are selectively removed, leaving an intermediate structure that, after removing a small portion of the gate-to-emitter insulating film, is suitable for cold electron emission. One embodiment discloses a method of forming these devices without resort to a planarization layer. A second embodiment discloses a methodology employing a planarization layer.

    摘要翻译: 一种用于制造火山形场发射器的方法,其形成非门控和门控垂直场发射器阵列的低成本,大面积制造。 栅极和发射极薄膜沉积在其上已经预先制造了柱阵列的衬底上。 这些保形膜覆盖基底,柱的侧壁和顶部顶表面或平台。 通过使用化学机械抛光(CMP),部分或全部薄膜被选择性地去除,留下中间结构,其在除去栅极 - 发射极间绝缘膜的一小部分后适用于冷电子发射。 一个实施例公开了一种在不依赖于平坦化层的情况下形成这些装置的方法。 第二实施例公开了采用平坦化层的方法。

    Apparatus and method for electroporation
    9.
    发明授权
    Apparatus and method for electroporation 失效
    电穿孔仪器及方法

    公开(公告)号:US5137817A

    公开(公告)日:1992-08-11

    申请号:US593033

    申请日:1990-10-05

    摘要: An electrode set for electrotransformation of a host cell by electroporation, comprising: an electrically insulating substrate; and at least one pair of interdigitated electrodes which are carried by said substrate and which lie in a generally planar array, said electrodes and said substrate being adopted to carry a cell transformant and a host cell thereon, said electrodes and said host cell and said cell transformant being adapted to pass electrical current upon the application of a potential difference across said electrodes.

    摘要翻译: 一种用于通过电穿孔电转移宿主细胞的电极组,包括:电绝缘衬底; 以及由所述基板承载并位于大致平面阵列中的至少一对叉指电极,所述电极和所述基板用于承载细胞转化体和宿主细胞,所述电极和所述宿主细胞和所述细胞 转换体适于在施加跨所述电极的电位差时传递电流。

    Micromachined cold cathode vacuum tube device and method of making
    10.
    发明授权
    Micromachined cold cathode vacuum tube device and method of making 失效
    微加工冷阴极真空管装置及其制造方法

    公开(公告)号:US4855636A

    公开(公告)日:1989-08-08

    申请号:US105895

    申请日:1987-10-08

    IPC分类号: H01J9/00 H01J21/10

    CPC分类号: H01J9/00 H01J21/105

    摘要: A miniaturized field emitter vacuum tube device and method of making are described. The device includes a needle-shaped field emitter cathode, metal gate and electron collecting anode, which are enclosed by an insulating chamber which is evacuated. The gate electrode may be used to form the insulator-to-metal vacuum seal. Device isolation is achieved by using a highly resistive polycrystalline silicon film. A method of making a field emitter cathode tip is described in which two masking and etching steps form a pair of intersecting lines, the intersection point forming the cathode tip.

    摘要翻译: 描述了一种小型化场发射体真空管装置及其制造方法。 该装置包括被抽真空的绝缘室包围的针状场发射极阴极,金属栅极和电子收集阳极。 栅电极可用于形成绝缘体至金属真空密封。 器件隔离是通过使用高电阻多晶硅膜实现的。 描述了制造场发射极阴极尖端的方法,其中两个掩模和蚀刻步骤形成一对相交线,该交点形成阴极尖端。