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    SMD diode holding structure and package thereof
    43.
    发明授权
    SMD diode holding structure and package thereof 有权
    SMD二极管保持结构及封装

    公开(公告)号：US08193540B2

    公开(公告)日：2012-06-05

    申请号：US12588415

    申请日：2009-10-15

    Applicant: Yi-Ming Huang ,  Hsiang-Cheng Hsieh

    Inventor： Yi-Ming Huang ,  Hsiang-Cheng Hsieh

    IPC: H01L27/15

    CPC classification number: H01L25/167 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2924/3025 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: An SMD diode holding structure includes a plastic housing and a plurality of metal holders. Two ends of the plastic housing from a function area and a notch. The metal holder has a base portion and a connecting pin portion. The top and bottom surfaces of the base portion are exposed to the function area and the notch. The top surface of one base portion in the function area is connected with an LED chip, and the bottom surface of another base portion in the notch is connected with the anti-ESD chip. The LED chip, the anti-ESD chip, and the base portion are connected with a conductive wire. The function area is covered with a first sealing compound, and the notch is covered with a second sealing compound. Light emitted from the LED chip is uniformly reflected in the function area, and the brightness is uniform.

    Abstract translation: SMD二极管保持结构包括塑料外壳和多个金属保持器。 塑料外壳的两端由功能区和凹口组成。 金属保持器具有基部和连接销部。 基部的顶面和底面暴露于功能区和凹口。 功能区域中的一个基部的顶面与LED芯片连接，凹口中的另一基部的底面与防静电芯片连接。 LED芯片，抗ESD芯片和基部与导线连接。 功能区域被第一密封化合物覆盖，并且凹口被第二密封化合物覆盖。 从LED芯片发出的光在功能区域均匀地反射，亮度均匀。

    Method for fabricating lED chip comprising reduced mask count
    44.
    发明授权
    Method for fabricating lED chip comprising reduced mask count 有权
    制造lED芯片的方法包括减少掩模计数

    公开(公告)号：US08178377B2

    公开(公告)日：2012-05-15

    申请号：US13046632

    申请日：2011-03-11

    Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    IPC: H01L21/00

    CPC classification number: H01L33/44 ,  H01L33/387 ,  Y10S438/951

    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

    Abstract translation: 提供一种制造发光二极管芯片的方法。 在该方法中，应用半色调掩模处理，灰度色调处理或多色调掩模处理，并与剥离处理相结合，以进一步减少发光二极管芯片的处理步骤。 在本发明中，一些部件也可以通过相同的工艺同时形成，以减少发光二极管芯片的工艺步骤。 因此，本发明中提供的发光二极管的制造方法降低了用于制造发光二极管的成本和时间。

    Method for fabricating LED chip comprising reduced mask count and lift-off processing
    47.
    发明授权
    Method for fabricating LED chip comprising reduced mask count and lift-off processing 有权
    制造LED芯片的方法包括减少掩模计数和剥离处理

    公开(公告)号：US08173465B2

    公开(公告)日：2012-05-08

    申请号：US13046576

    申请日：2011-03-11

    Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    IPC: H01L21/00

    CPC classification number: H01L33/44 ,  H01L33/387 ,  Y10S438/951

    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

    Abstract translation: 提供一种制造发光二极管芯片的方法。 在该方法中，应用半色调掩模处理，灰度色调处理或多色调掩模处理，并与剥离处理相结合，以进一步减少发光二极管芯片的处理步骤。 在本发明中，一些部件也可以通过相同的工艺同时形成，以减少发光二极管芯片的工艺步骤。 因此，本发明中提供的发光二极管的制造方法降低了用于制造发光二极管的成本和时间。

    Illuminating device
    48.
    发明授权
    Illuminating device 有权
    照明装置

    公开(公告)号：US08147092B2

    公开(公告)日：2012-04-03

    申请号：US12076436

    申请日：2008-03-18

    Applicant: Meng-Chai Wu ,  Chien-Lung Lee

    Inventor： Meng-Chai Wu ,  Chien-Lung Lee

    IPC: F21V9/00

    CPC classification number: F21S10/02 ,  F21V9/10 ,  F21V9/40 ,  F21V29/773 ,  F21Y2101/00 ,  F21Y2115/10

    Abstract: An illuminating device comprises a base, a light source and at least one first layer, wherein said light source is assembled on said base to emit a first color temperature light, while first layer is located on the base along the first light irradiation path. The first light is passed through the first layer to react with said first layer to form a second color temperature light for emission, wherein said first color temperature is ranged from 2800K to 20000K, while excitation wavelength range of said first layer is mainly beyond the wavelength of ultraviolet lights for further adjusting the second color temperature range.

    Abstract translation: 照明装置包括基座，光源和至少一个第一层，其中所述光源组装在所述基座上以发射第一色温光，同时第一层沿着第一光照射路径位于基底上。 第一光通过第一层与第一层反应以形成用于发射的第二色温光，其中所述第一色温范围为2800K至20000K，而所述第一层的激发波长范围主要超出波长 的紫外线灯，用于进一步调整第二色温范围。

    Fabrication method of light emitting diode
    49.
    发明授权
    Fabrication method of light emitting diode 有权
    发光二极管的制造方法

    公开(公告)号：US08071409B2

    公开(公告)日：2011-12-06

    申请号：US12542703

    申请日：2009-08-18

    Applicant: Te-Chung Wang ,  Chun-Jong Chang ,  Kun-Fu Huang

    Inventor： Te-Chung Wang ,  Chun-Jong Chang ,  Kun-Fu Huang

    IPC: H01L21/00 ,  H01L33/00

    CPC classification number: H01L33/007 ,  Y10S438/962 ,  Y10S977/755

    Abstract: A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T1, and the barrier layers are formed at a growth temperature T2, where T1

    Abstract translation: 提供了一种发光二极管的制造方法。 在基板上形成第一种类型的掺杂半导体层。 随后，在第一种掺杂半导体层上形成发光层。 形成发光层的工艺包括在第一掺杂半导体层上交替地形成多个势垒层和多个量子阱层。 量子阱层以生长温度T1形成，并且阻挡层以T1

    Packaging process of light emitting diode
    50.
    发明授权
    Packaging process of light emitting diode 有权
    发光二极管封装工艺

    公开(公告)号：US08012777B2

    公开(公告)日：2011-09-06

    申请号：US12496644

    申请日：2009-07-02

    Applicant: Wen-Sung Chang ,  Cheng-Ta Kuo

    Inventor： Wen-Sung Chang ,  Cheng-Ta Kuo

    IPC: H01L21/56

    CPC classification number: H01L33/52 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

    Abstract: A packaging process of a light emitting diode (LED) is provided. First, an LED chip is bonded with a carrier to electrically connect to each other. After that, the carrier is heated to raise the temperature thereof. Next, an encapsulant is formed on the heated carrier by a dispensing process to encapsulate the LED chip, wherein the viscosity of the encapsulant before contacting the carrier is lower than that of the encapsulant after contacting the carrier. Thereafter, the encapsulant is cured.

    Abstract translation: 提供了一种发光二极管（LED）的封装工艺。 首先，将LED芯片与载体接合以彼此电连接。 之后，载体被加热以升高其温度。 接下来，通过分配工艺在加热的载体上形成密封剂以封装LED芯片，其中在与载体接触之前，密封剂在与载体接触之前的粘度低于封装剂的粘度。 此后，密封剂固化。

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