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    Composition and organic insulating film prepared using the same
    41.
    发明授权
    Composition and organic insulating film prepared using the same 有权
    组合物和使用其制备的有机绝缘膜

    公开(公告)号：US08395146B2

    公开(公告)日：2013-03-12

    申请号：US13067002

    申请日：2011-05-02

    Applicant: Jung Seok Hahn ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Joo Young Kim

    Inventor： Jung Seok Hahn ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Joo Young Kim

    IPC: H01L35/24

    CPC classification number: H01L51/052

    Abstract: Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.

    Abstract translation: 公开了组合物，包含该有机绝缘膜的有机绝缘膜，包括有机绝缘膜的有机薄膜晶体管，包括有机薄膜晶体管的电子器件及其制造方法。 在该组合物中，包括具有羧基的有机聚合物材料和具有给电子基团的有机硅烷材料，从而实现可以进一步稳定未反应的交联材料的结构。 因此，滞后现象可能会降低，并且可能增加透明度，从而可以确保暴露在空气中时的稳定性。 因此，有机薄膜晶体管的寿命可以延长。

    Quantum dot light emitting device having quantum dot multilayer
    43.
    发明授权
    Quantum dot light emitting device having quantum dot multilayer 有权
    量子点发光器件具有量子点多层

    公开(公告)号：US08330142B2

    公开(公告)日：2012-12-11

    申请号：US12708664

    申请日：2010-02-19

    Applicant: Kyung-sang Cho ,  Byoung-lyong Choi ,  Eun-kyung Lee ,  Tae-ho Kim ,  Sang-jin Lee

    Inventor： Kyung-sang Cho ,  Byoung-lyong Choi ,  Eun-kyung Lee ,  Tae-ho Kim ,  Sang-jin Lee

    IPC: H01L21/02

    CPC classification number: H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5096

    Abstract: A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

    Abstract translation: 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带电平。

    Method of manufacturing silicon optoelectronic device,silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device
    45.
    发明申请
    Method of manufacturing silicon optoelectronic device,silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
    制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置

    公开(公告)号：US20120161159A9

    公开(公告)日：2012-06-28

    申请号：US10758136

    申请日：2004-01-16

    Applicant: Eun-Kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

    Inventor： Eun-Kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

    IPC: H01L21/00 ,  H01L27/15 ,  H01L33/00 ,  H01L31/12

    CPC classification number: H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

    Abstract translation: 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

    GRAPHENE-POLYMER LAYERED COMPOSITE AND PROCESS FOR PREPARING THE SAME
    48.
    发明申请
    GRAPHENE-POLYMER LAYERED COMPOSITE AND PROCESS FOR PREPARING THE SAME 有权
    石墨聚合物层状复合材料及其制备方法

    公开(公告)号：US20120070612A1

    公开(公告)日：2012-03-22

    申请号：US13094154

    申请日：2011-04-26

    Applicant: Eun-kyung LEE ,  Byoung-lyong CHOI ,  Choong-ho YU

    Inventor： Eun-kyung LEE ,  Byoung-lyong CHOI ,  Choong-ho YU

    IPC: B32B3/00 ,  B32B27/00 ,  B32B19/00 ,  B32B37/02 ,  B32B33/00 ,  B82Y30/00

    CPC classification number: B32B37/24 ,  B32B9/007 ,  B32B27/06 ,  B32B2037/243 ,  B32B2037/246 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2457/00 ,  B82Y30/00 ,  H01B1/04 ,  Y10T156/10 ,  Y10T428/24355 ,  Y10T428/24802 ,  Y10T428/31855

    Abstract: A graphene-polymer layered composite and a method of manufacturing the same is provided. A graphene-polymer layered composite includes polymer layers surrounding a graphene sheet, and may include numerous polymer layers and graphene sheets in an alternating stacked configuration. The graphene-polymer layered composite has the characteristics of a polymer in that it provides flexibility, ease of manufacturing, low manufacturing costs, and low thermal conductivity. The graphene-polymer layered composite also has the characteristics of graphene in that it has a high electrical conductivity. Due to the low thermal conductivity and high electrical conductivity, the graphene-polymer layered composite may be useful for electrodes, electric devices, and thermoelectric materials.

    Abstract translation: 提供了石墨烯 - 聚合物层状复合材料及其制造方法。 石墨烯 - 聚合物层状复合物包括围绕石墨烯片的聚合物层，并且可以包括交替堆叠构型的许多聚合物层和石墨烯片。 石墨烯 - 聚合物层状复合材料具有聚合物的特征，因为它提供了灵活性，易于制造，低制造成本和低热导率。 石墨烯聚合物层状复合材料也具有石墨烯的特征，因为其具有高导电性。 由于导热性低，导电性高，石墨烯 - 聚合物层状复合材料可用于电极，电子器件和热电材料。

    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same
    50.
    发明授权
    Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
    有机绝缘体组合物，具有该有机绝缘体组合物的有机绝缘膜，具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法

    公开(公告)号：US08030644B2

    公开(公告)日：2011-10-04

    申请号：US11481843

    申请日：2006-07-07

    Applicant: Jung Han Shin ,  Eun Kyung Lee ,  Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Sang Yoon Lee

    Inventor： Jung Han Shin ,  Eun Kyung Lee ,  Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Sang Yoon Lee

    IPC: H01L35/24

    CPC classification number: H01L51/052 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0055 ,  Y10T428/31663

    Abstract: Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.

    Abstract translation: 本发明的实施例涉及有机绝缘体组合物，具有有机绝缘体组合物的有机绝缘膜，具有有机绝缘膜的有机薄膜晶体管，具有有机薄膜晶体管的电子器件及其形成方法。 本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。 提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。 可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质，例如阈值电压和/或电荷载流子迁移率。 有机薄膜晶体管可以有效地用于制造包括液晶显示器（LCD）和/或光伏器件的各种电子器件。

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