公开(公告)号：US20130017226A1

公开(公告)日：2013-01-17

申请号：US13635868

申请日：2011-03-18

申请人： Young Woo Park ,  Ki Won Jo ,  Srok Ho Yoo ,  Jung Yu ,  Dong Ji Kim ,  Sun-Ha Yoon ,  Eun Jung Song ,  Eun Kyung Lee ,  Jin Mi Oh ,  Kyu Won Cho ,  Mi La Cho ,  Ho Youn Kim ,  Mi Kyung Park ,  Hye Jwa Oh ,  Jin Sil Park ,  Yun Ju Woo ,  Jae Kyeong Byun ,  Jun Geol Ryu

发明人： Young Woo Park ,  Ki Won Jo ,  Srok Ho Yoo ,  Jung Yu ,  Dong Ji Kim ,  Sun-Ha Yoon ,  Eun Jung Song ,  Eun Kyung Lee ,  Jin Mi Oh ,  Kyu Won Cho ,  Mi La Cho ,  Ho Youn Kim ,  Mi Kyung Park ,  Hye Jwa Oh ,  Jin Sil Park ,  Yun Ju Woo ,  Jae Kyeong Byun ,  Jun Geol Ryu

IPC分类号： C07K19/00 ,  C12N15/63 ,  C12N1/21 ,  C12N5/10 ,  A61K38/17 ,  A61P19/04 ,  A61P7/06 ,  A61P3/10 ,  A61P19/02 ,  A61P25/00 ,  A61P17/00 ,  A61P21/00 ,  C12N15/62 ,  A61P37/06

CPC分类号： C07K14/525 ,  C07K14/70575 ,  C07K2319/32 ,  Y10S514/814 ,  Y10S514/885 ,  Y10S514/886 ,  Y10S514/903

摘要： The present invention relates to TNFR2-TWEAKR fusion protein, more precisely to TNFR2-TWEAKR fusion protein acting as a double-antagonist to TNF-α and TWEAK, known as major causes of autoimmune arthritis which is one of autoimmune diseases. When the composition comprising TNFR2-TWEAKR fusion protein was treated to Th17 cells, the secretion of the inflammatory cytokine IL-17 was reduced but the secretion of the anti-inflammatory cytokine IL-10 generated in Treg cells was increased. Such effect of TNFR2-TWEAKR fusion protein was far greater than that of a single protein such as TNFR2-Fc or TWEAK-Fc. The TNFR2-TWEAKR fusion protein of the present invention has not only excellent treatment effect on arthritis in CIA mouse model not also excellent treatment effect on autoimmune rheumatoid arthritis by increasing the expression of Treg, the immune suppressive cells. Therefore, the TNFR2-TWEAKR fusion protein of the present invention can be effectively used as an active ingredient for the composition for the prevention and treatment of autoimmune disease.

摘要翻译： 本发明涉及TNFR2-TWEAKR融合蛋白，更确切地说，作为TNF-α和TWEAK的双拮抗剂的TNFR2-TWEAKR融合蛋白，被称为自身免疫性疾病之一的自身免疫性关节炎的主要原因。 当将包含TNFR2-TWEAKR融合蛋白的组合物治疗至Th17细胞时，炎性细胞因子IL-17的分泌减少，但在Treg细胞中产生的抗炎细胞因子IL-10的分泌增加。 TNFR2-TWEAKR融合蛋白的这种作用远远大于单一蛋白如TNFR2-Fc或TWEAK-Fc的这种作用。 本发明的TNFR2-TWEAKR融合蛋白不仅对CIA小鼠模型的关节炎具有优异的治疗作用，而且通过增加免疫抑制细胞Treg的表达，对自身免疫性类风湿性关节炎也不是很好的治疗效果。 因此，本发明的TNFR2-TWEAKR融合蛋白可以有效地用作预防和治疗自身免疫性疾病的组合物的活性成分。

公开(公告)号：US08101515B2

公开(公告)日：2012-01-24

申请号：US12766137

申请日：2010-04-23

申请人： Joon-ho Sung ,  Ju-yong Lee ,  Mi-kyung Park ,  Tae-young Chung

发明人： Joon-ho Sung ,  Ju-yong Lee ,  Mi-kyung Park ,  Tae-young Chung

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/60 ,  H01L21/74 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/20

CPC分类号： H01L21/76897 ,  H01L21/76885 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

摘要： Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

摘要翻译： 提供制造半导体器件的方法，其中第一接触插塞形成在衬底中的第一有源区上，并且第二接触插塞形成在衬底中的第二有源区上。 第二接触塞从基板的上表面的高度大于第一接触塞从基板的上表面的高度。 在第二接触插塞上形成第三接触插塞。 第一间隔件形成在第三接触插塞的侧表面上。 形成覆盖第三接触插塞的第三层间绝缘层。 图案化第三层间绝缘层以形成暴露第一接触插塞的第三开口。 第四接触插塞形成在电连接到第一接触插塞的第三开口中。

公开(公告)号：US20110201575A1

公开(公告)日：2011-08-18

申请号：US13119154

申请日：2009-09-16

申请人： Yong Tack Lee ,  Myeong Sik Yoon ,  Hye Suk Hong ,  Il Hwan Cho ,  Tae Kun An ,  Si Beum Lee ,  Hae Jong Jang ,  Mi Kyung Park

发明人： Yong Tack Lee ,  Myeong Sik Yoon ,  Hye Suk Hong ,  Il Hwan Cho ,  Tae Kun An ,  Si Beum Lee ,  Hae Jong Jang ,  Mi Kyung Park

IPC分类号： A61K31/675 ,  A61P31/18

CPC分类号： C07D473/32 ,  A61K9/146

摘要： The present invention relates to an amorphous solid dispersion with improved stability comprising 9-[2-[[bis[(pivaloyloxy)methyl]phosphono]methoxy]ethyl]adenine as a nucleotide analogue, a pharmaceutical composition comprising the same, and a method for preparing the same.

摘要翻译： 本发明涉及具有改进的稳定性的无定形固体分散体，其包含9- [2 - [[双[（新戊酰氧基）甲基]膦酰基]甲氧基]乙基]腺嘌呤作为核苷酸类似物，包含其的药物组合物和 准备一样

公开(公告)号：US20100210087A1

公开(公告)日：2010-08-19

申请号：US12766137

申请日：2010-04-23

申请人： Joon-ho Sung ,  Ju-yong Lee ,  Mi-kyung Park ,  Tae-young Chung

发明人： Joon-ho Sung ,  Ju-yong Lee ,  Mi-kyung Park ,  Tae-young Chung

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76897 ,  H01L21/76885 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

摘要： Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

摘要翻译： 提供制造半导体器件的方法，其中第一接触插塞形成在衬底中的第一有源区上，并且第二接触插塞形成在衬底中的第二有源区上。 第二接触塞从基板的上表面的高度大于第一接触塞从基板的上表面的高度。 在第二接触插塞上形成第三接触插塞。 第一间隔件形成在第三接触插塞的侧表面上。 形成覆盖第三接触插塞的第三层间绝缘层。 图案化第三层间绝缘层以形成暴露第一接触插塞的第三开口。 第四接触插塞形成在电连接到第一接触插塞的第三开口中。

公开(公告)号：US07732318B2

公开(公告)日：2010-06-08

申请号：US11315153

申请日：2005-12-23

申请人： Gee Sung Chae ,  Mi Kyung Park

发明人： Gee Sung Chae ,  Mi Kyung Park

IPC分类号： H01L21/00

CPC分类号： H05K3/101 ,  H01L21/288 ,  H01L21/76838 ,  H01L27/1292 ,  H05K3/04 ,  H05K3/102 ,  H05K2201/0257 ,  H05K2201/0272 ,  H05K2203/0108 ,  Y10S977/777

摘要： A fabricating method of a flat panel display device can reduce manufacturing costs of the flat panel display device. A fabricating method of a flat panel display device includes providing a conductive nanopowder thin film material having a first conductive nanopowder and a second conductive nanopowder, spreading the conductive nanopowder thin film material over a substrate, forming a conductive thin film pattern by patterning the conductive nanopowder thin film material, and forming a conductive thin film by baking the conductive thin film pattern, wherein the first conductive nanopowder is located in a middle of the conductive thin film and the second conductive nanopowder is located in an outer part of the conductive thin film.

摘要翻译： 平板显示装置的制造方法可以降低平板显示装置的制造成本。 平板显示装置的制造方法包括提供具有第一导电纳米粉末和第二导电纳米粉末的导电纳米粉末薄膜材料，将导电纳米粉末薄膜材料铺展在基板上，通过图案化导电纳米粉末形成导电薄膜图案 薄膜材料，并通过烘烤导电薄膜图案形成导电薄膜，其中第一导电纳米粉末位于导电薄膜的中间，第二导电纳米粉末位于导电薄膜的外部。

公开(公告)号：US20100133545A1

公开(公告)日：2010-06-03

申请号：US12630164

申请日：2009-12-03

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US07645647B2

公开(公告)日：2010-01-12

申请号：US11397746

申请日：2006-04-04

申请人： Gee-Sung Chae ,  Mi-Kyung Park

发明人： Gee-Sung Chae ,  Mi-Kyung Park

IPC分类号： H01L21/00

CPC分类号： H01L27/1222 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78696 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/762

摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

摘要翻译： 薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

公开(公告)号：US20090139960A1

公开(公告)日：2009-06-04

申请号：US11950215

申请日：2007-12-04

申请人： Jin Wuk Kim ,  Mi Kyung Park

发明人： Jin Wuk Kim ,  Mi Kyung Park

IPC分类号： C23C16/04 ,  B29C41/02 ,  B29C41/34 ,  B29C41/38

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G02F1/1362 ,  H01L27/1288 ,  H01L27/1292

摘要： A method of fabricating an apparatus of fabricating a flat panel display device and method of fabricating flat panel display device is disclosed, which enables simplification of process by performing a patterning process without a photo process, the method for fabricating an apparatus of fabricating flat panel display device comprising, preparing a master mold including a thin film pattern, coating a liquid-type molding material including oligomer on the master mold, forming a soft mold including a groove provided with a pattern in a shape corresponding to the thin film pattern of the master mold and adhering the soft mold to a mold support plate, wherein the soft mold is adhered to the mold support plate by a covalent bonding in the interface between the oligomer and the mold support plate.

摘要翻译： 公开了一种制造平板显示装置的制造方法以及制造平板显示装置的方法，其通过在不进行光刻处理的情况下执行图案化处理来简化工艺，制造平板显示装置的方法 装置，包括：制备包括薄膜图案的母模，在所述母模上涂覆包含低聚物的液态成型材料，形成软模，所述软模包括设置有与所述母模的薄膜图案相对应的图案的凹槽 模具并将软模粘合到模具支撑板上，其中软模具通过在低聚物和模具支撑板之间的界面中的共价键合而附着到模具支撑板上。

公开(公告)号：US20090104749A1

公开(公告)日：2009-04-23

申请号：US12108012

申请日：2008-04-23

申请人： Joon-Ho Sung ,  Ju-yong Lee ,  Mi-Kyung Park ,  Tae-young Chung

发明人： Joon-Ho Sung ,  Ju-yong Lee ,  Mi-Kyung Park ,  Tae-young Chung

IPC分类号： H01L21/02 ,  H01L21/4763

CPC分类号： H01L21/76897 ,  H01L21/76885 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

摘要： Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

摘要翻译： 提供制造半导体器件的方法，其中第一接触插塞形成在衬底中的第一有源区上，并且第二接触插塞形成在衬底中的第二有源区上。 第二接触塞从基板的上表面的高度大于第一接触塞从基板的上表面的高度。 在第二接触插塞上形成第三接触插塞。 第一间隔件形成在第三接触插塞的侧表面上。 形成覆盖第三接触插塞的第三层间绝缘层。 图案化第三层间绝缘层以形成暴露第一接触插塞的第三开口。 第四接触插塞形成在电连接到第一接触插塞的第三开口中。

公开(公告)号：US07462864B2

公开(公告)日：2008-12-09

申请号：US11435522

申请日：2006-05-17

申请人： Mi Kyung Park ,  Gee Sung Chae

发明人： Mi Kyung Park ,  Gee Sung Chae

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/0673

摘要： A liquid crystal display device includes a substrate, a gate line and a data line intersected with each other to define a pixel region on the substrate, a thin film transistor having a nanowire channel layer in an intersection region of the gate line and the data line, and a pixel electrode formed in the pixel region.

摘要翻译： 液晶显示装置包括彼此相交的基板，栅极线和数据线，以限定基板上的像素区域，在栅极线和数据线的交叉区域中具有纳米线沟道层的薄膜晶体管 以及形成在像素区域中的像素电极。