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    Prevention of fluorine-induced gate oxide degradation in WSi polycide structure
    41.
    发明授权
    Prevention of fluorine-induced gate oxide degradation in WSi polycide structure 失效
    防止WSI聚合物结构中氟诱发的栅极氧化物降解

    公开(公告)号：US5668394A

    公开(公告)日：1997-09-16

    申请号：US582599

    申请日：1996-01-03

    Applicant: Water Lur ,  Cheng-Han Huang

    Inventor： Water Lur ,  Cheng-Han Huang

    IPC: H01L21/28 ,  H01L29/49 ,  H01L29/76

    CPC classification number: H01L29/4941 ,  H01L21/28061 ,  Y10S257/915

    Abstract: A new method of fabricating a polycide gate is described. A gate polysilicon layer is provided a gate oxide layer on the surface of a substrate. A thin conducting diffusion barrier is deposited overlying the gate polysilicon layer. A of tungsten silicide is deposited overlying the thin diffusion barrier layer wherein a reaction gas in the deposition contains fluorine atoms and wherein fluorine atoms are incorporated into the tungsten layer. The gate polysilicon, thin conducting barrier, and tungsten silicide layers are patterned form the polycide gate structures. The wafer is annealed complete formation of the polycide gate structures wherein number of fluorine atoms from the tungsten silicide layer into the gate polysilicon layer are minimized by presence of the thin conducting diffusion barrier layer wherein because the diffusion of the fluorine atoms is the thickness of the gate oxide layer does not This prevents the device from degradation such as voltage shift and saturation current descrease.

    Abstract translation: 描述了一种制造多晶硅栅极的新方法。 栅极多晶硅层在衬底的表面上提供栅极氧化物层。 沉积在栅极多晶硅层上的薄导电扩散势垒。 沉积硅化硅的A，覆盖薄扩散阻挡层，其中沉积中的反应气体含有氟原子，并且其中氟原子被结合到钨层中。 门多晶硅，薄导电屏障和硅化钨层由多晶硅栅极结构构图。 晶片经过退火完成形成多晶硅栅极结构，其中从硅化钨层到栅极多晶硅层的氟原子数量通过存在薄导电扩散阻挡层而最小化，其中由于氟原子的扩散是 栅极氧化层不会阻止器件劣化，如电压偏移和饱和电流下降。

    Method of preventing fluorine-induced gate oxide degradation in WSi.sub.x polycide structure
    43.
    发明授权
    Method of preventing fluorine-induced gate oxide degradation in WSi.sub.x polycide structure 失效
    防止WSX聚合物结构中氟诱发的栅极氧化物降解的方法

    公开(公告)号：US5364803A

    公开(公告)日：1994-11-15

    申请号：US80304

    申请日：1993-06-24

    Applicant: Water Lur ,  Cheng-Han Huang

    Inventor： Water Lur ,  Cheng-Han Huang

    IPC: H01L21/28 ,  H01L29/49 ,  H01L21/265

    CPC classification number: H01L29/4941 ,  H01L21/28061 ,  Y10S257/915

    Abstract: A new method of fabricating a polycide gate structure is described. A gate polysilicon layer is provided overlying a gate oxide layer on the surface of a semiconductor substrate. A thin conducting diffusion barrier layer is deposited overlying the gate polysilicon layer. A layer of tungsten silicide is deposited overlying the thin conducting diffusion barrier layer wherein a reaction gas used in the deposition contains fluorine atoms and wherein the fluorine atoms are incorporated into the tungsten silicide layer. The gate polysilicon, thin conducting diffusion barrier, and tungsten silicide layers are patterned to form the polycide gate structures. The wafer is annealed to complete formation of the polycide gate structures wherein the number of fluorine atoms from the tungsten silicide layer diffusing into the gate polysilicon layer are minimized by the presence of the thin conducting diffusion barrier layer and wherein because the diffusion of the fluorine atoms is minimized, the thickness of the gate oxide layer does not increase. This prevents the device from degradation such as threshold voltage shift and saturation current decrease.

    Abstract translation: 描述了一种制造多晶硅栅极结构的新方法。 栅极多晶硅层设置在半导体衬底的表面上覆盖栅极氧化物层。 沉积在栅极多晶硅层上的薄导电扩散阻挡层。 一层硅化钨沉积在薄导电扩散阻挡层上，其中沉积中使用的反应气体含有氟原子，并且其中氟原子被结合到硅化钨层中。 栅极多晶硅，薄导电扩散阻挡层和硅化钨层被图案化以形成多晶硅栅极结构。 将晶片退火以完成多晶硅栅极结构的形成，其中通过薄导电扩散阻挡层的存在使扩散到栅极多晶硅层中的硅化钨层的氟原子的数量最小化，并且其中由于氟原子的扩散 栅极氧化物层的厚度不会增加。 这防止器件劣化，例如阈值电压偏移和饱和电流降低。

    Flexible film article
    45.
    发明授权
    Flexible film article 有权

    公开(公告)号：US11192326B2

    公开(公告)日：2021-12-07

    申请号：US16400344

    申请日：2019-05-01

    Applicant: Chen-Cheng Huang ,  Pao-Hao Huang ,  Pao-Han Huang

    Inventor： Chen-Cheng Huang ,  Pao-Hao Huang ,  Pao-Han Huang

    IPC: B32B5/02 ,  C08J5/22 ,  B32B38/00 ,  B32B3/30 ,  B32B3/26

    Abstract: A flexible film article includes: a film body having opposite first and second surfaces, and at least one surrounding surface extending from the first surface to the second surface and defining a through hole extending through the film body; at least one central member spaced apart from the surrounding surface; and a plurality of spaced-apart extending members, each of which having two opposite ends connected to the surrounding surface and the central member, respectively. The spaced-apart extending members, the central member, and the surrounding surface cooperatively define spaced-apart micropores for passing of a gaseous substance therethrough.

    Method and apparatus of localized luma prediction mode inheritance for chroma prediction in video coding
    46.
    发明授权
    Method and apparatus of localized luma prediction mode inheritance for chroma prediction in video coding 有权

    公开(公告)号：US10812806B2

    公开(公告)日：2020-10-20

    申请号：US16078193

    申请日：2017-02-21

    Applicant: Kai Zhang ,  Jicheng An ,  Han Huang

    Inventor： Kai Zhang ,  Jicheng An ,  Han Huang

    IPC: H04N19/159 ,  H04N19/176 ,  H04N19/119 ,  H04N19/186 ,  H04N19/11 ,  H04N19/139 ,  H04N19/61

    Abstract: A method and apparatus of Inter/Intra prediction for a chroma component performed by a video encoder or video decoder are disclosed. According to this method, a current chroma prediction block (e.g. a prediction unit, PU) is divided into multiple chroma prediction sub-blocks (e.g. sub-PUs). A corresponding luma prediction block is identified for each chroma prediction sub-block. A chroma prediction mode for each chroma prediction sub-block is determined from a luma prediction mode associated with the corresponding luma prediction block. A local chroma predictor for the current chroma prediction block is generated by applying a prediction process to the multiple chroma prediction sub-blocks using respective chroma prediction modes. In other words, the prediction process is applied at the chroma prediction sub-block level. After the local chroma predictor is derived, a coding block associated with the current chroma prediction block is encoded or decoded using information comprising the local chroma predictor.

    RECLOSABLE FASTENER STRIP
    47.
    发明申请
    RECLOSABLE FASTENER STRIP 审中-公开

    公开(公告)号：US20200288824A1

    公开(公告)日：2020-09-17

    申请号：US16813403

    申请日：2020-03-09

    Applicant: Chen-Cheng HUANG ,  Pao-Hao HUANG ,  Pao-Han HUANG

    Inventor： Chen-Cheng HUANG ,  Pao-Hao HUANG ,  Pao-Han HUANG

    IPC: A44B18/00

    Abstract: A reclosable fastener strip includes first and second strip halves each having a strip body and two hook units. Each hook unit has at least one pair of elongated hooks formed on a major surface of the strip body and cooperatively defining a recess therebetween. Each elongated hook is configured and dimensioned to permit being fitted securely in the recess of a corresponding pair of the elongated hooks so as to provide a suitable watertight seal.

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