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    Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
    45.
    发明授权
    Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same 有权
    薄膜晶体管及其制造方法，包括薄膜晶体管的有机发光显示装置及其制造方法

    公开(公告)号：US07786494B2

    公开(公告)日：2010-08-31

    申请号：US12149944

    申请日：2008-05-09

    申请人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

    发明人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

    IPC分类号： H01L29/18

    CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/3244

    摘要： A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.

    摘要翻译： 薄膜晶体管包括栅电极; 由氧化物形成并与栅电极绝缘的有源层; 以及由有源层上的氧化物形成的源电极和漏电极，使得源电极和漏电极与栅电极绝缘并与有源层电连接，其中有源层，源电极和漏电极 使用原子层沉积（ALD）和本征工艺形成，并且与源极和漏极接触的有源层的表面粗糙度的均方根（RMS）值小于1nm，以便减少 有源层与源电极和漏电极之间的接触电阻，其制造方法，包括该薄膜晶体管的有机发光显示装置及其制造方法。

    Organic light emitting display device
    47.
    发明申请
    Organic light emitting display device 有权
    有机发光显示装置

    公开(公告)号：US20090284449A1

    公开(公告)日：2009-11-19

    申请号：US12318409

    申请日：2008-12-29

    申请人： Hun-Jung Lee ,  Ki-Nyeng Kang ,  Yeon-Gon Mo

    发明人： Hun-Jung Lee ,  Ki-Nyeng Kang ,  Yeon-Gon Mo

    IPC分类号： G09G3/30

    CPC分类号： H01L27/3265 ,  H01L27/1225 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/7869 ,  H01L2251/5323

    摘要： An organic light emitting display device having a pixel unit including a plurality of scan lines, data lines and pixel power lines arranged in a matrix type and forming respective sub pixels in an intersection region of the plurality of scan lines, data lines and pixel power lines; a thin film transistor including a pad unit receiving signals to drive driving the respective sub pixels, a scan driver and a data driver supplying the signals to the plurality of scan lines and data lines through the pad unit, and non-pixel unit formed with a power supply line supplying power to the pixel powers line, the sub-pixel including an oxide semiconductor layer; a capacitor having a lower electrode and an upper electrode formed of a transparent conductive material; and an organic light emitting element electrically coupled to the thin transistor and disposed on the capacitor.

    摘要翻译： 一种有机发光显示装置，具有像素单元，该像素单元包括多个扫描线，数据线和矩阵型排列的像素电力线，并且在多个扫描线，数据线和像素电力线的交叉区域中形成各个子像素 ; 薄膜晶体管，其包括接收信号以驱动驱动各个子像素的焊盘单元;扫描驱动器和数据驱动器，其通过焊盘单元向多条扫描线和数据线提供信号;以及非像素单元，其形成有 所述电源线向所述像素电力线供电，所述子像素包括氧化物半导体层; 电容器，具有由透明导电材料形成的下电极和上电极; 以及电耦合到薄晶体管并且设置在电容器上的有机发光元件。

    Thin film transistor, light-emitting display device having the same and associated methods
    48.
    发明申请
    Thin film transistor, light-emitting display device having the same and associated methods 有权
    薄膜晶体管，发光显示装置具有相同的相关方法

    公开(公告)号：US20090057674A1

    公开(公告)日：2009-03-05

    申请号：US12222497

    申请日：2008-08-11

    申请人： Jong-han Jeong ,  Jae-kyeong Jeong ,  Yeon-gon Mo ,  Jin-seong Park ,  Hun-jung Lee ,  Hyun-soo Shin

    发明人： Jong-han Jeong ,  Jae-kyeong Jeong ,  Yeon-gon Mo ,  Jin-seong Park ,  Hun-jung Lee ,  Hyun-soo Shin

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L29/7869

    摘要： A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.

    摘要翻译： 薄膜晶体管（TFT）包括在基板上的N型氧化物半导体层，通过栅极电介质层与N型氧化物半导体层间隔开的栅电极，与N型氧化物半导体层的第一部分接触的源电极 氧化物半导体层，以及与N型氧化物半导体层的第二部分接触的漏电极。 第一和第二部分各自具有包含至少一个第一族元素的离子的掺杂区，并且掺杂区中的至少一个第一族元素的离子可具有小于N型的功函数 氧化物半导体材料。