公开(公告)号：US07375868B2

公开(公告)日：2008-05-20

申请号：US11543666

申请日：2006-10-05

Applicant: Mun-Kue Park ,  Jung-Kee Lee ,  Sung-Soo Park ,  Byeong-Hoon Park

Inventor： Mun-Kue Park ,  Jung-Kee Lee ,  Sung-Soo Park ,  Byeong-Hoon Park

IPC: G02B26/08 ,  G02B5/18

CPC classification number: G02B26/101 ,  G02B26/106 ,  G02B27/1006 ,  G02B27/102 ,  G02B27/104 ,  G02B27/108 ,  G02B27/1086 ,  G02B27/145 ,  G02B27/42 ,  G02B27/4227

Abstract: An image scanning apparatus for realizing an image on a screen includes: a spatial light modulator module for diffracting light beams having different wavelengths into relevant modes; and an iris for limiting light beams of modes except a mode of 0th-order among the modes diffracted by the spatial light modulator module.

Abstract translation: 用于实现屏幕上的图像的图像扫描装置包括：用于将具有不同波长的光束衍射到相关模式的空间光调制器模块; 以及用于限制由空间光调制器模块衍射的模式中的除了第0 顺序的模式之外的模式的光束的光圈。

公开(公告)号：US07187700B2

公开(公告)日：2007-03-06

申请号：US10730568

申请日：2003-12-08

Applicant: Dong-Jae Shin ,  Dae-Kwang Jung ,  Jea-Hyuck Lee ,  Jung-Kee Lee ,  Seong-Taek Hwang ,  Yun-Je Oh

Inventor： Dong-Jae Shin ,  Dae-Kwang Jung ,  Jea-Hyuck Lee ,  Jung-Kee Lee ,  Seong-Taek Hwang ,  Yun-Je Oh

IPC: H01S3/13

CPC classification number: H04B10/572 ,  H01S5/4006

Abstract: Disclosed is a method for maintaining wavelength-locking of a Fabry-Perot laser regardless of a change of external temperature even though a temperature controller is not used, and a wavelength division multiplexing (WDM) light source using the method, as an economical light source used in a WDM optical communication field. The WDM light source comprises a Fabry-Perot laser for injecting spectrum-spliced incoherent light to amplify and output only an oscillation mode matching with a wavelength of the injected light, and a bias controlling unit for adjusting a bias current supplied to the Fabry-Perot laser to a value adjacent to a threshold current of the Fabry-Perot laser, whose threshold current is changed according to a temperature and a relationship between the injected light changed depending to a temperature and a wavelength of the oscillation mode. Therefore, the bias current having a value adjacent to the threshold current of the Fabry-Perot laser is supplied to the Fabry-Perot laser, so that the Fabry-Perot laser can maintain an excellent transmission characteristic regardless of a change of temperature even though a temperature controller is not used.

Abstract translation: 公开了即使不使用温度控制器也能够保持法布里 - 珀罗激光器的波长锁定的方法，而不管外部温度的变化如何，并且使用该方法作为经济光源的波分复用（WDM）光源 用于WDM光通信领域。 WDM光源包括用于注入频谱拼接的非相干光的法布里 - 珀罗激光器，以放大和仅输出与注入的光的波长匹配的振荡模式;以及偏置控制单元，用于调节提供给法布里 - 珀罗 激光到与Fabry-Perot激光器的阈值电流相邻的值，其阈值电流根据温度改变，并且注入的光随温度变化和振荡模式的波长之间的关系而改变。 因此，具有与法布里 - 珀罗激光器的阈值电流相邻的值的偏置电流被提供给法布里 - 珀罗激光器，使得法布里 - 珀罗激光器可以保持优异的传输特性，而不管温度的变化，即使 温度控制器不使用。

公开(公告)号：US07099530B2

公开(公告)日：2006-08-29

申请号：US10841051

申请日：2004-05-07

Applicant: Dong-Jae Shin ,  Jung-Kee Lee ,  Jeong-Seok Lee ,  Seong-Taek Hwang

Inventor： Dong-Jae Shin ,  Jung-Kee Lee ,  Jeong-Seok Lee ,  Seong-Taek Hwang

IPC: G02B6/26

CPC classification number: H01S5/50 ,  H01L27/15 ,  H01S5/0265 ,  H01S5/028

Abstract: An optical transmitter module for creating an optical signal having the same wavelength as an incoherent light inputted thereinto is provided. The module includes a substrate, a multi-layer crystal growth layer including a first area for amplifying the incoherent light and the optical signal and a second area for creating an optical signal having the same wavelength as the incoherent light amplified by means of the first area, and an electrode unit for independently injecting currents into the areas of the multi-layer crystal growth layer. A light generated at a broadband light source is spectrum-sliced and injected into the optical transmitter module so that a wavelength division multiplexing light source is realised.

Abstract translation: 提供了一种用于产生具有与输入的非相干光相同波长的光信号的光发射机模块。 该模块包括衬底，多层晶体生长层，其包括用于放大非相干光和光信号的第一区域和用于产生与通过第一区域放大的非相干光波长相同的波长的光信号的第二区域 ，以及用于独立地向多层晶体生长层的区域注入电流的电极单元。 在宽带光源处产生的光被频谱分片并注入到光发射机模块中，从而实现波分复用光源。

公开(公告)号：US20050103259A1

公开(公告)日：2005-05-19

申请号：US10805790

申请日：2004-03-22

Applicant: Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

Inventor： Young-Churl Bang ,  Eun-Hwa Lee ,  Hyeon-Soo Kim ,  Jung-Kee Lee ,  Jun-Youn Kim

IPC: H01L21/205 ,  C30B25/04 ,  C30B29/40 ,  H01L21/20 ,  H01S5/323 ,  C30B23/00 ,  C30B28/14

CPC classification number: C30B29/40 ,  C30B25/04 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

Abstract translation: 通过金属有机化学气相沉积（MOCVD）和掩模图案生长半导体层的选择区域的方法包括形成在具有（100）的半导体衬底的半导体衬底上的第一掩模图案和第二掩模图案， 晶面。 第一掩模图案具有比选择区域宽的第一窗口，第二掩模图案具有第二窗口和第三窗口。 第二窗口是通过将第二掩模图案与第一掩模图案间隔开来定义的，与用于阻挡第一窗口边缘处的III族半导体源气体的表面迁移的阻挡区域相对应。 第三个窗口与选择区域一样宽。 通过MOCVD在由第二和第三窗口暴露的半导体衬底上生长半导体层。 可以在第二和第三窗口中蚀刻沟槽，并且生长层从沟槽延伸超过InP的表面到阻挡气体分散体。

公开(公告)号：US6028876A

公开(公告)日：2000-02-22

申请号：US976014

申请日：1997-11-21

Applicant: Jung Kee Lee ,  Kyung Hyun Park ,  Ho Sung Cho ,  Dong Hoon Jang ,  Chul Soon Park

Inventor： Jung Kee Lee ,  Kyung Hyun Park ,  Ho Sung Cho ,  Dong Hoon Jang ,  Chul Soon Park

IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/042 ,  H01S5/20 ,  H01S3/19

CPC classification number: H01S5/042 ,  H01S5/0425 ,  H01S5/2063

Abstract: The present invention relates to high power semiconductor laser device and method for fabricating the same utilizing ion implanting process, by which a beam steering phenomenon of an optical output due to filaments is eliminated. This elimination is achieved by a periodically varying gain given for a resonator of the semiconductor laser device. That is, this invention changes a gain distribution which causes the generation of filaments in the resonator into different distribution. According to the present invention, there is formed an insulation layer through ion implantation to an active layer to adjust current density implanted to the active layer, thereby eliminating non-uniform distribution of the light along the longitudinal direction of the resonator.

Abstract translation: 本发明涉及大功率半导体激光器件及其制造方法，该方法利用离子注入工艺，由此消除了由于细丝引起的光输出的光束转向现象。 该消除通过对于半导体激光器件的谐振器给定的周期性变化的增益来实现。 也就是说，本发明改变了使谐振器中的细丝产生不同分布的增益分布。 根据本发明，通过离子注入形成有源层的绝缘层，以调节注入有源层的电流密度，从而消除光沿着谐振器纵向的不均匀分布。

公开(公告)号：US5665612A

公开(公告)日：1997-09-09

申请号：US512224

申请日：1995-08-07

Applicant: Jung-Kee Lee ,  Dong-Hoon Jang ,  Jeong-Soo Kim ,  Kyung-Hyun Park

Inventor： Jung-Kee Lee ,  Dong-Hoon Jang ,  Jeong-Soo Kim ,  Kyung-Hyun Park

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/30 ,  H01S5/343 ,  H01L21/265

CPC classification number: B82Y20/00 ,  H01S5/227 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313

Abstract: Disclosed is a method for fabricating a planar buried heterostructure laser diode, comprising the steps of sequentially forming a first clad layer, an undoped active layer and a second clad layer on a substrate so as to complete a first crystal growth; forming a patterned mask layer on the second clad layer; non-selectively etching the second clad layer, the active layer, the first clad layer and the substrate using the mask layer as an etching mask; selectively etching the substrate and the first and second layers; sequentially forming a first and second current blocking layers on a structure formed by the selective etching step so as to complete a second crystal growth; sequentially forming a third clad layer and an ohmic contact layer thereon after removal of the mask layer so as to complete a third crystal growth; and forming a first electrode on a rear surface of the substrate and forming a second electrode on a surface of the third clad layer. By the method, a leakage current induced in an interface between the active layer and the first current blocking layer provided therein can be reduced in proportion to a distance between the active layer and the second current blocking layer formed on the first current blocking layer, and therefore performance of the laser diode can be enhanced.

Abstract translation: 公开了一种制造平面埋置异质结激光二极管的方法，包括以下步骤：在衬底上依次形成第一覆层，未掺杂有源层和第二覆层，以完成第一晶体生长; 在所述第二覆盖层上形成图案化掩模层; 使用掩模层作为蚀刻掩模，非选择性地蚀刻第二覆盖层，有源层，第一覆盖层和衬底; 选择性地蚀刻基板和第一和第二层; 在通过选择性蚀刻步骤形成的结构上依次形成第一和第二电流阻挡层，以完成第二晶体生长; 在除去掩模层之后依次形成第三覆层和欧姆接触层，以完成第三晶体生长; 以及在所述基板的后表面上形成第一电极，并在所述第三包覆层的表面上形成第二电极。 通过该方法，可以在有源层和其中设置的第一电流阻挡层之间的界面中感应的漏电流与形成在第一电流阻挡层上的有源层和第二电流阻挡层之间的距离成比例地减小，以及 因此可以提高激光二极管的性能。