Method for measuring three-dimension shape
    42.
    发明申请
    Method for measuring three-dimension shape 审中-公开
    测量三维形状的方法

    公开(公告)号:US20090216486A1

    公开(公告)日:2009-08-27

    申请号:US12453321

    申请日:2009-05-07

    CPC classification number: G01B11/28 G01B11/2531 G06T7/521

    Abstract: A method of measuring a 3D shape, which can measure a 3D shape of target objects on a board by searching a database for bare board information when a measuring object is not set to a normal inspection mode or by performing bare board teaching when the board is supplied from a supplier having not the bare board information is provided. The method of measuring a 3D shape includes operation S100 of measuring a brightness of a first illumination source 41a, operation S200 of measuring a phase-to-height conversion factor, operation S300 of determining whether the measurement is performed in a normal inspection mode, operation S400 of measuring a 3D shape of a board 62 according to the normal inspection mode, operation S500 of determining whether bare board information about the board 62 is included, operation S600 of performing bare board teaching when the bare board information is excluded, operation S700 of measuring the 3D shape of target objects on the board 62 when the bare board information is included or bare board teaching information is generated, and operation S800 of analyzing whether the board 62 is normal or abnormal by using 3D shape information. Therefore, the 3D shape of target objects on the board may be more readily measured.

    Abstract translation: 一种测量3D形状的方法,其可以通过在测量对象未设置为正常检查模式时通过在数据库中查找裸板信息来测量板上的目标对象的3D形状,或者当板是板时,执行裸板教学 提供从没有裸板信息的供应商提供的。 测量3D形状的方法包括测量第一照明源41a的亮度的操作S100,测量相位到高度转换因子的操作S200,确定是否在正常检查模式下执行测量的操作S300,操作 S400,根据普通检查模式测量板62的3D形状,确定是否包括关于板62的裸板信息的操作S500;当裸板信息被排除时执行裸板教学的操作S600,操作S700 当生成裸板信息或者产生裸板教学信息时,测量板62上的目标对象的3D形状,以及通过使用3D形状信息来分析板62是正常还是异常的操作S800。 因此,可以更容易地测量板上目标物体的3D形状。

    Method for automated measurement of three-dimensional shape of circuit boards
    43.
    发明授权
    Method for automated measurement of three-dimensional shape of circuit boards 有权
    自动测量电路板三维形状的方法

    公开(公告)号:US07545512B2

    公开(公告)日:2009-06-09

    申请号:US11656458

    申请日:2007-01-23

    CPC classification number: G01B11/28 G01B11/2531 G06T7/521

    Abstract: A method of measuring a 3D shape includes the steps of measuring a brightness of a first illumination source 41a, measuring a phase-to-height conversion factor, measuring a 3D shape of a circuit board 62 according to the normal inspection mode, and determining whether bare board information about the circuit board 62 is included. If the information is not included, performing bare board teaching to acquire the information. Then, the 3D shape of target objects on the circuit board 62 are measured, when the bare board information is included or bare board teaching information is generated. Next, the circuit board 62 is analyzed to determine if it is normal or abnormal by using 3D shape information.

    Abstract translation: 测量3D形状的方法包括以下步骤:测量第一照明源41a的亮度,测量相位到高度的转换因子,根据正常检查模式测量电路板62的3D形状,以及确定是否 包括关于电路板62的裸板信息。 如果不包括信息,执行裸板教学以获取信息。 然后,当包括裸板信息或生成裸板教学信息时,测量电路板62上的目标对象的3D形状。 接下来,通过使用3D形状信息来分析电路板62以确定其是正常还是异常。

    GATE STRUCTURE OF A SEMICONDUCTOR DEVICE
    45.
    发明申请
    GATE STRUCTURE OF A SEMICONDUCTOR DEVICE 失效
    半导体器件的门结构

    公开(公告)号:US20060145200A1

    公开(公告)日:2006-07-06

    申请号:US11174788

    申请日:2005-07-05

    Applicant: Min Yoo

    Inventor: Min Yoo

    Abstract: Disclosed herein is a method for forming a gate structure in a semiconductor device. The method comprises forming a SiGe film on a predetermined region of a silicon substrate corresponding to a bit-line node portion where a bit-line junction is formed, growing a silicon film over the silicon substrate having the SiGe film formed thereon, selectively etching the SiGe film, embedding a dielectric material into a portion where the SiGe film is removed, forming a stepped profile on the silicon film by etching a predetermined portion of the silicon film such that the bit-line node portion is included in the stepped profile, and forming a gate on the silicon film having the stepped profile formed therein such that the gate overlaps the stepped profile. The dielectric pad prevents the bit-line junction from spreading downward upon operation of the gate, thereby enhancing a punch-through phenomenon.

    Abstract translation: 这里公开了一种在半导体器件中形成栅极结构的方法。 该方法包括在对应于形成位线结的位线节点部分的硅衬底的预定区域上形成SiGe膜,在其上形成有SiGe膜的硅衬底上生长硅膜,选择性地蚀刻 SiGe膜,将介电材料嵌入到去除SiGe膜的部分中,通过蚀刻硅膜的预定部分使得在硅膜上形成阶梯形轮廓,使得位线节点部分包括在阶梯轮廓中,以及 在硅膜上形成具有形成在其中的阶梯轮廓的栅极,使得栅极与阶梯轮廓重叠。 电介质垫在栅极操作时防止位线结面向下扩展,从而增强穿通现象。

    Apparatus and method for detecting proximity by proximity sensor in portable terminal
    49.
    发明授权
    Apparatus and method for detecting proximity by proximity sensor in portable terminal 有权
    用于检测便携式终端中接近传感器的接近度的装置和方法

    公开(公告)号:US09106756B2

    公开(公告)日:2015-08-11

    申请号:US13436407

    申请日:2012-03-30

    CPC classification number: H04M1/67 H03K17/941 H04M2250/12

    Abstract: An apparatus and method is configured to detect the proximity of an object using a proximity sensor in a portable terminal. A method for detecting the proximity of an object in a portable terminal mounted with a proximity sensor includes setting a reference light-receiving quantity according to a hairstyle of a user of the portable terminal, emitting light, detecting a light-receiving quantity corresponding to the emitted light, and determining the proximity/non-proximity of an object by comparing the light-receiving quantity with the reference light-receiving quantity.

    Abstract translation: 一种装置和方法被配置为使用便携式终端中的接近传感器来检测物体的接近度。 用于检测安装有接近传感器的便携式终端中的物体的接近度的方法包括根据便携式终端的用户的发型设置参考光接收量,发射光,检测对应于 发射光,以及通过将光接收量与参考光接收量进行比较来确定对象的接近度/非接近度。

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