公开(公告)号：US08674373B2

公开(公告)日：2014-03-18

申请号：US13370906

申请日：2012-02-10

Applicant: Nathaniel R. Quick ,  Aravinda Kar

Inventor： Nathaniel R. Quick ,  Aravinda Kar

IPC: H01L29/66

CPC classification number: H01L33/005 ,  H01L21/8213 ,  H01L21/8252 ,  H01L31/0312 ,  H01L31/03125 ,  H01L33/343

Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device. In another embodiment, the solid state energy conversion device operates as a photovoltaic device.

Abstract translation: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 在一个实施例中，固态能量转换装置用作发光装置。 在另一个实施例中，固态能量转换装置作为光伏器件工作。

公开(公告)号：US08617965B1

公开(公告)日：2013-12-31

申请号：US11410713

申请日：2006-04-25

Applicant: Nathaniel R. Quick ,  Aravinda Kar

Inventor： Nathaniel R. Quick ,  Aravinda Kar

IPC: H01L21/00

CPC classification number: H01L21/02381 ,  C30B29/36 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/0445 ,  H01L21/268

Abstract: A method is disclosed for making a high crystalline quality layer in a surface region of a wide bandgap material substrate. The high crystalline quality layer is formed by directing a thermal energy beam onto the wide bandgap material in the presence of a doping gas for converting a layer of the wide bandgap material into the high crystalline quality layer. Various electrical, optical and electro-optical components may be formed within the high crystalline quality layer through a further conversion process. In an alternative embodiment, the high crystalline quality layer may be embedded within the wide bandgap material.

Abstract translation: 公开了在宽带隙材料基板的表面区域中制造高结晶质量层的方法。 通过在存在用于将宽带隙材料的层转换成高结晶质量层的掺杂气体的存在下将热能束引导到宽带隙材料上而形成高结晶质层。 可以通过进一步的转化过程在高结晶质量层内形成各种电，光学和电光部件。 在替代实施例中，高结晶质量层可以嵌入宽带隙材料内。

公开(公告)号：US08393289B2

公开(公告)日：2013-03-12

申请号：US12231078

申请日：2008-08-29

Applicant: Nathaniel R. Quick ,  Aravinda Kar

Inventor： Nathaniel R. Quick ,  Aravinda Kar

IPC: B05C5/02

CPC classification number: B82Y30/00 ,  H01L21/02381 ,  H01L21/02587 ,  H01L21/02592 ,  H01L21/02628 ,  H01L21/02675 ,  H01L21/288 ,  H01L21/76838 ,  Y10S977/70 ,  Y10S977/712 ,  Y10S977/773 ,  Y10S977/786

Abstract: An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto the deposited nano particles on the substrate. The apparatus and method is suitable for fabricating patterned conductors, semiconductors and insulators on semiconductor wafers of a nano scale line width by direct nanoscale deposition of materials.

公开(公告)号：US20120292640A1

公开(公告)日：2012-11-22

申请号：US13370906

申请日：2012-02-10

Applicant: Nathaniel R. Quick ,  Aravinda Kar

Inventor： Nathaniel R. Quick ,  Aravinda Kar

IPC: H01L31/12 ,  H01L33/34 ,  H01L33/02

CPC classification number: H01L33/005 ,  H01L21/8213 ,  H01L21/8252 ,  H01L31/0312 ,  H01L31/03125 ,  H01L33/343

Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device. In another embodiment, the solid state energy conversion device operates as a photovoltaic device.

Abstract translation: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 在一个实施例中，固态能量转换装置用作发光装置。 在另一个实施例中，固态能量转换装置作为光伏器件工作。

公开(公告)号：US08080836B2

公开(公告)日：2011-12-20

申请号：US11825809

申请日：2007-07-09

Applicant: Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

Inventor： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

IPC: H01L21/02

CPC classification number: H01L21/02376 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02636

Abstract: A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.

Abstract translation: 公开了一种用于原位制造嵌入衬底中的半导体组件的工艺。 用第一激光束烧蚀衬底以在其中形成空隙。 第一导电元件用第二激光束形成在衬底的空隙中。 在存在沉积气氛的情况下，第三激光束在第一导电元件上沉积半导体材料。 第二导电元件用第四激光束形成在第一半导体材料上。 该工艺可用于制造肖特基势垒二极管或结型场效应晶体管等。

公开(公告)号：US07618880B1

公开(公告)日：2009-11-17

申请号：US11062011

申请日：2005-02-18

Applicant: Nathaniel R. Quick

Inventor： Nathaniel R. Quick

IPC: H01L20/00

CPC classification number: H01L21/02381 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02667 ,  H01L21/02689

Abstract: A method is disclosed for forming a layer of a wide bandgap material in a non-wide bandgap material. The method comprises providing a substrate of a non-wide bandgap material and converting a layer of the non-wide bandgap material into a layer of a wide bandgap material. An improved component such as wide bandgap semiconductor device may be formed within the wide bandgap material through a further conversion process.

Abstract translation: 公开了一种在非宽带隙材料中形成宽带隙材料层的方法。 该方法包括提供非宽带隙材料的衬底并将非宽带隙材料的层转换成宽带隙材料的层。 可以通过进一步的转换过程在宽带隙材料内形成诸如宽带隙半导体器件的改进的部件。

公开(公告)号：US07603883B2

公开(公告)日：2009-10-20

申请号：US11821640

申请日：2007-06-25

Applicant: Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

Inventor： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

IPC: B21B45/00

CPC classification number: B21C37/042 ,  B21C1/003 ,  B21C1/02 ,  B21C1/12 ,  B21C37/047 ,  Y10S72/70

Abstract: An apparatus and method is disclosed for drawing continuous metallic wire having a first diameter to a metallic fiber having a reduced second diameter. A feed mechanism moves the wire at a first linear velocity. A laser beam heats a region of the wire to an elevated temperature. A draw mechanism draws the heated wire at a second and greater linear velocity for providing a drawn metallic fiber having the reduced second diameter.

Abstract translation: 公开了一种用于将具有第一直径的连续金属丝拉制成具有减小的第二直径的金属纤维的装置和方法。 进给机构以第一线速度移动线。 激光束将导线的区域加热到升高的温度。 牵引机构以第二和更大的线速度牵引加热的线，以提供具有减小的第二直径的拉伸金属纤维。

公开(公告)号：US07419887B1

公开(公告)日：2008-09-02

申请号：US11189266

申请日：2005-07-26

Applicant: Nathaniel R. Quick ,  Aravinda Kar

Inventor： Nathaniel R. Quick ,  Aravinda Kar

IPC: H01L21/20 ,  H01L21/36

CPC classification number: B82Y30/00 ,  H01L21/02381 ,  H01L21/02587 ,  H01L21/02592 ,  H01L21/02628 ,  H01L21/02675 ,  H01L21/288 ,  H01L21/76838 ,  Y10S977/70 ,  Y10S977/712 ,  Y10S977/773 ,  Y10S977/786

Abstract: An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto the deposited nano particles on the substrate. The apparatus and method is suitable for fabricating patterned conductors, semiconductors and insulators on semiconductor wafers of a nano scale line width by direct nanoscale deposition of materials.

Abstract translation: 公开了一种在具有纳米颗粒的衬底上形成纳米结构的装置和方法。 将纳米颗粒通过纳米尺寸的孔沉积到基底上。 将激光束引导通过聚光器将纳米尺寸激光束聚焦到基底上沉积的纳米颗粒上。 该装置和方法适用于通过材料的直接纳米尺度沉积在纳米尺度线宽度的半导体晶片上制造图案化的导体，半导体和绝缘体。

公开(公告)号：US07237422B2

公开(公告)日：2007-07-03

申请号：US11264877

申请日：2005-11-01

Applicant: Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

Inventor： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

IPC: B21D37/16

CPC classification number: B21C37/042 ,  B21C1/003 ,  B21C1/02 ,  B21C1/12 ,  B21C37/047 ,  Y10S72/70

Abstract: An apparatus and method is disclosed for drawing continuous metallic wire having a first diameter to a metallic fiber having a reduced second diameter. A feed mechanism moves the wire at a first linear velocity. A laser beam heats a region of the wire to an elevated temperature. A draw mechanism draws the heated wire at a second and greater linear velocity for providing a drawn metallic fiber having the reduced second diameter.

Abstract translation: 公开了一种用于将具有第一直径的连续金属丝拉制成具有减小的第二直径的金属纤维的装置和方法。 进给机构以第一线速度移动线。 激光束将导线的区域加热到升高的温度。 牵引机构以第二和更大的线速度牵引加热的线，以提供具有减小的第二直径的拉伸金属纤维。

公开(公告)号：US07013695B2

公开(公告)日：2006-03-21

申请号：US10828711

申请日：2004-04-20

Applicant: Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

Inventor： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

IPC: B21D37/16

CPC classification number: B21C37/042 ,  B21C1/003 ,  B21C1/02 ,  B21C1/12 ,  B21C37/047 ,  Y10S72/70

Abstract: An apparatus and method is disclosed for drawing continuous metallic wire having a first diameter to a metallic fiber having a reduced second diameter. A feed mechanism moves the wire at a first linear velocity. A laser beam heats a region of the wire to an elevated temperature. A draw mechanism draws the heated wire at a second and greater linear velocity for providing a drawn metallic fiber having the reduced second diameter.

Abstract translation: 公开了一种用于将具有第一直径的连续金属丝拉制成具有减小的第二直径的金属纤维的装置和方法。 进给机构以第一线速度移动线。 激光束将导线的区域加热到升高的温度。 牵引机构以第二和更大的线速度牵引加热的线，以提供具有减小的第二直径的拉伸金属纤维。