公开(公告)号：US20060286783A1

公开(公告)日：2006-12-21

申请号：US11154211

申请日：2005-06-15

Applicant: James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

Inventor： James Papanu ,  Han-Wen Chen ,  Brian Brown ,  Steven Verhaverbeke

IPC: H01L21/04 ,  H01L21/302

CPC classification number: H01L21/02057 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908 ,  Y10S438/928

Abstract: A combination of a dry oxidizing, wet etching, and wet cleaning processes are used to remove particle defects from a wafer after ion implantation, as part of a wafer bonding process to fabricate a SOI wafer. The particle defects on the topside and the backside of the wafer are oxidized, in a dry strip chamber, with an energized gas. In a wet clean chamber, the backside of the wafer is treated with an etchant solution to remove completely or partially a thermal silicon oxide layer, followed by exposure of the topside and the backside to a cleaning solution. The cleaning solution contains ammonium hydroxide, hydrogen peroxide, DI water, and optionally a chelating agent, and a surfactant. The wet clean chamber is integrated with the dry strip chamber and contained in a single wafer processing system.

Abstract translation: 干法氧化，湿蚀刻和湿法清洗工艺的组合被用于在离子注入之后从晶片去除颗粒缺陷，作为制造SOI晶片的晶片接合工艺的一部分。 晶片顶面和背面的颗粒缺陷在干燥条带室中被激发的气体氧化。 在湿式清洁室中，用蚀刻剂溶液处理晶片的背面以完全或部分地去除热氧化硅层，随后将顶侧和背面暴露于清洁溶液中。 清洗液含有氢氧化铵，过氧化氢，去离子水，任选的螯合剂和表面活性剂。 湿式清洁室与干燥条带室一体化，并包含在单个晶片处理系统中。

公开(公告)号：US20060264343A1

公开(公告)日：2006-11-23

申请号：US11497486

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman

Inventor： Steven Verhaverbeke ,  J. Truman

IPC: A61K8/00

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

Abstract: The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

Abstract translation: 本发明是一种新颖的清洁方法和用于单晶片清洗工艺的解决方案。 根据本发明，清洗溶液包含氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2），水（H O 2）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 而且本发明还有另一个实施方案，清洗溶液还包括溶解气体，例如H 2。 在本发明的一个具体实施方案中，该溶液通过喷雾或分配在旋转晶片上而被使用。

公开(公告)号：US20060260659A1

公开(公告)日：2006-11-23

申请号：US11496936

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B3/12 ,  B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060260643A1

公开(公告)日：2006-11-23

申请号：US11497405

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B6/00 ,  C23G1/00 ,  B08B7/00 ,  B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060107970A1

公开(公告)日：2006-05-25

申请号：US10997194

申请日：2004-11-23

Applicant: Steven Verhaverbeke ,  Dennis Yost ,  Roman Gouk

Inventor： Steven Verhaverbeke ,  Dennis Yost ,  Roman Gouk

IPC: B08B3/12 ,  C23G1/00 ,  B08B7/00

CPC classification number: H01L21/02052 ,  H01L21/31111 ,  H01L21/67051

Abstract: According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate is provided. The method may include supporting a semiconductor substrate, the semiconductor substrate having a surface, and dispensing an amount of semiconductor substrate processing liquid onto the surface of the semiconductor substrate, the amount of semiconductor substrate processing liquid being such that substantially none of the semiconductor substrate processing liquid flows off the surface of the semiconductor substrate. The semiconductor substrate processing fluid may form a standing puddle on the surface of the semiconductor substrate. The semiconductor substrate may be rotated while the semiconductor substrate processing liquid is on the surface of the semiconductor substrate such that substantially all of the amount of semiconductor substrate processing liquid remains on the surface of the semiconductor substrate during said rotation.

公开(公告)号：US20060073673A1

公开(公告)日：2006-04-06

申请号：US10958126

申请日：2004-10-04

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/46 ,  C11D7/32

CPC classification number: H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D3/33 ,  C11D11/0047 ,  C11D11/007

Abstract: Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH4OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.

Abstract translation: 本发明的实施方案描述了表面的氨氢氧化物处理。 在一个实施方案中，包括氢氧化铵（NH 4 OH），水（H 2 O 2 O），螯合剂和用于清洁硅的表面活性剂的方法和清洗溶液 描述锗基底。 由于过氧化氢蚀刻锗，清洗溶液不包括过氧化氢（H 2 O 2 O 2）。 在另一个实施方案中，描述了通过含有氢氧化铵（NH 4 OH）的表面处理促进氧化表面与另一表面结合的端基的半导体衬底上的氧化表面的方法。 蒸发表面处理后，氧化表面立即与第二基板结合。

公开(公告)号：US07011715B2

公开(公告)日：2006-03-14

申请号：US10407692

申请日：2003-04-03

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B7/04 ,  B08B3/02

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

Abstract: A method that includes rotating a wafer, heating the wafer, applying a first liquid through one or more nozzles to a center of a topside of the wafer that is cooler than the heated wafer, and translating the one or more nozzles to an outer diameter edge of the wafer.

公开(公告)号：US20060035475A1

公开(公告)日：2006-02-16

申请号：US10918757

申请日：2004-08-12

Applicant: Steven Verhaverbeke ,  Brian Brown

Inventor： Steven Verhaverbeke ,  Brian Brown

IPC: H01L21/31 ,  H01L21/302

CPC classification number: H01L21/67155 ,  B08B3/12 ,  B08B7/04 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67057

Abstract: According to one aspect of the invention, a semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a semiconductor substrate support, a dispense head positioned over the semiconductor substrate support, a liquid container, and a transport subsystem. A semiconductor substrate may be placed on the semiconductor substrate support while a first semiconductor processing liquid is dispensed thereon. The wafer may also be spun by the semiconductor substrate support to remove the first semiconductor processing liquid. The transport subsystem may transport the semiconductor substrate to the liquid container where the semiconductor substrate may be immersed in a second semiconductor processing liquid. The semiconductor substrate may then be removed from the second semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the second semiconductor processing liquid.

Abstract translation: 根据本发明的一个方面，提供半导体衬底处理装置和半导体衬底的处理方法。 半导体衬底处理设备可以包括半导体衬底支撑件，位于半导体衬底支架上方的分配头，液体容器和运输子系统。 半导体衬底可以放置在半导体衬底支撑件上，同时分配第一半导体处理液体。 也可以通过半导体衬底支撑来旋转晶片以去除第一半导体处理液体。 输送子系统可以将半导体衬底输送到半导体衬底浸入第二半导体处理液中的液体容器。 然后可以从第二半导体处理液体中去除半导体衬底，同时蒸汽指向半导体衬底的表面，其中半导体衬底与第二半导体处理液体的表面接触。

公开(公告)号：US20050156485A1

公开(公告)日：2005-07-21

申请号：US11034475

申请日：2005-01-12

Applicant: Roman Gouk ,  Steven Verhaverbeke

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: B06B1/02 ,  H01L21/00 ,  H03H7/40 ,  H02N2/00 ,  H01L41/04

CPC classification number: H01L21/67057 ,  B06B1/0207 ,  B08B3/12 ,  H01L21/6704 ,  H01L21/67051 ,  H03H7/40

Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

Abstract translation: 一种用于匹配声波传感器负载和RF电源的阻抗幅度和阻抗相位的方法和装置。 声波传感器负载具有负载阻抗幅值和相位。 RF电源具有源阻抗幅值和相位。 在本发明的一个实施例中，变压器匹配源极和负载阻抗幅度。 与变压器串联连接的电容器将源阻抗相位与负载阻抗相位相匹配。

公开(公告)号：US06495099B1

公开(公告)日：2002-12-17

申请号：US09209101

申请日：1998-12-10

Applicant: Steven Verhaverbeke ,  Christopher F. McConnell

Inventor： Steven Verhaverbeke ,  Christopher F. McConnell

IPC: A61L900

CPC classification number: H01L21/02052 ,  H01L21/02019 ,  H01L21/30608 ,  H01L21/31111

Abstract: The present invention is directed to wet processing methods for the manufacture of electronic component precursors, such as semiconductor wafers used in integrated circuits. The electronic component precursors are placed in a reaction chamber and contacted with at least one reactive chemical process fluid for a selected period of time. The reactive process fluid can be, for example, hydrofluoric acid. The electronic component precursors are then exposed directly to a drying fluid, with no intervening rinsing fluid, for a selected period of time. The drying fluid can be a vapor.

Abstract translation: 本发明涉及用于制造电子元件前体（例如集成电路中使用的半导体晶片）的湿法加工方法。 将电子元件前体放置在反应室中并与至少一种反应性化学工艺流体接触一段选定的时间。 反应过程流体可以是例如氢氟酸。 然后将电子元件前体直接暴露于干燥流体，而没有中间冲洗流体在选定的时间段内。 干燥流体可以是蒸气。