公开(公告)号：US20050020070A1

公开(公告)日：2005-01-27

申请号：US10484502

申请日：2002-09-24

申请人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

发明人： Katsunori Ichiki ,  Kazuo Yamauchi ,  Hirokuni Hiyama ,  Seiji Samukawa

IPC分类号： G21K1/00 ,  G21K5/04 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H05H3/02

CPC分类号： H01J37/32357 ,  H01J37/32422 ,  H01L21/3065 ,  H01L21/67069

摘要： An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.

摘要翻译： 蚀刻装置包括用于保持工件（X）的工件保持器（21），用于在真空室（3）中产生等离子体（30）的等离子体发生器（10,20），设置在真空室 工件保持器（21）和等离子体发生器（10,20）以及设置在真空室（3）中的孔电极（4）上游的栅电极（5）。 孔口电极（4）具有限定在其中的孔（4a）。 蚀刻装置还包括用于在孔电极（4）和栅电极（5）之间施加电压的电压施加单元（25,26），以加速由等离子体发生器（10,20）产生的等离子体（30）的离子 并且将提取的离子通过孔口电极（4）中的孔（4a），以产生具有10eV至50eV的能量的准直中性粒子束。

公开(公告)号：US5936352A

公开(公告)日：1999-08-10

申请号：US753090

申请日：1996-11-20

申请人： Seiji Samukawa ,  Tsutomu Tsukada ,  Yukito Nakagawa ,  Kibatsu Shinohara ,  Hirofumi Matsumoto ,  Hiroyuki Ueyama

发明人： Seiji Samukawa ,  Tsutomu Tsukada ,  Yukito Nakagawa ,  Kibatsu Shinohara ,  Hirofumi Matsumoto ,  Hiroyuki Ueyama

IPC分类号： H01J37/32 ,  H05H1/46 ,  H05B37/00

CPC分类号： H01J37/3211 ,  H01J37/32082 ,  H01J37/32165 ,  H05H1/46 ,  H01J2237/3346

摘要： A plasma processing apparatus includes a plasma chamber and an antenna formed by a first set of parallel antenna elements and a second set of parallel antenna elements, the antenna elements of the first set being interdigitally arranged with those of the second set. An energy source supplies oscillation energy of first phase to the first set of antenna elements and oscillation energy of second, opposite phase to the second set of antenna elements to produce oppositely moving energy fields in the chamber at such a frequency that electrons are confined in a plasma produced in the chamber.

摘要翻译： 等离子体处理装置包括等离子体室和由第一组平行天线元件和第二组平行天线元件形成的天线，第一组的天线元件与第二组的天线元件交错布置。 能量源将第一相位的振荡能量提供给第一组天线元件，并将第二组相对于第二组天线振子的振荡能量提供给第二组天线元件，以在腔室中产生相反移动的能量场，使得电子被限制在 在室内产生的等离子体。

公开(公告)号：US5900699A

公开(公告)日：1999-05-04

申请号：US876902

申请日：1997-06-16

申请人： Seiji Samukawa ,  Tsutomu Tsukada ,  Yukito Nakagawa ,  Kibatsu Shinohara ,  Hiroyuki Ueyama

发明人： Seiji Samukawa ,  Tsutomu Tsukada ,  Yukito Nakagawa ,  Kibatsu Shinohara ,  Hiroyuki Ueyama

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05B37/00

CPC分类号： H01L21/67069

摘要： The plasma generator includes a plasma generation chamber which is pumped and into which plasma generation gas is introduced. An antenna provided outside the plasma generation chamber, a RF source supplying a RF power with the antenna to excite the antenna. A part or whole of the plasma generation chamber is made of dielectric. The antenna radiates the RF through the dielectric and includes an antenna element which longitudinal direction is vertical to the direction for the plasma. The plasma generation chamber has a side wall intersecting the longitudinal direction of the antenna element at both sides. A part or whole of a plasma generation chamber is made of dielectric having relative permittivity .epsilon..sub.S. The antenna radiates a RF through the dielectric and is comprised of multiple antenna elements which longitudinal directions are on a plane vertical to the direction for the plasma. A shield is provided at the opposite side of the electric interposing the antenna, and, the electric distance between the antenna and the shield is shorter than the length made from adding 1/.epsilon..sub.S times of the thickness of the dielectric with the distance between the dielectric and the antenna. A surface treatment apparatus using the plasma generator, includes a substrate holder for placing a substrate to be treated in parallel with the longitudinal direction of the antenna elements in the plasma generation chamber.

摘要翻译： 等离子体发生器包括等离子体产生室，其被泵送并被引入等离子体产生气体。 设置在等离子体产生室外部的天线，RF天线提供RF功率以激发天线。 等离子体生成室的一部分或全部由电介质构成。 天线通过电介质辐射RF，并且包括纵向方向垂直于等离子体的方向的天线元件。 等离子体产生室具有与两侧的天线元件的纵向方向相交的侧壁。 等离子体产生室的一部分或全部由具有相对介电常数εS的电介质制成。天线通过电介质辐射RF，并且由多个天线元件组成，纵向方向在垂直于等离子体的方向的平面上。 在插入天线的电气的相对侧设置有屏蔽，并且天线和屏蔽之间的电距离短于由电介质的厚度的1 / epsilon S倍增加的长度 电介质和天线。 使用等离子体发生器的表面处理装置包括用于将待处理基板与等离子体发生室中的天线元件的纵向平行放置的基板保持器。

公开(公告)号：US5827435A

公开(公告)日：1998-10-27

申请号：US548730

申请日：1995-10-26

申请人： Seiji Samukawa

发明人： Seiji Samukawa

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31

CPC分类号： H01J37/32192 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma processing method is provided which suppresses the charge accumulation on a processing object such as a semiconductor substrate. An alternating excitation signal in the form of pulses for exciting the plasma is supplied to a reaction gas contained in a plasma chamber, each pulse having an on-period t.sub.on for supplying the excitation signal and an off-period t.sub.off for stopping the excitation signal. The off period ranges from 10 to 100 .mu.sec. The on-period may be determined as needed. An alternating bias signal for biasing the processing object is also applied to the object in the chamber. The bias signal has a frequency of at most 600 kHz. As a result, an increased number of positive and negative ions impinge the object thus increasing the processing rate and reducing the charge accumulation compared to prior art processes.

摘要翻译： 提供一种等离子体处理方法，其抑制诸如半导体衬底的处理对象上的电荷累积。 用于激发等离子体的脉冲形式的交替激励信号被提供给等离子体室中包含的反应气体，每个脉冲具有用于提供激励信号的导通周期ton和用于停止激励信号的截止周期toff。 关闭时间范围为10至100秒。 可以根据需要确定期限。 用于偏压加工对象的交替偏置信号也适用于腔室中的物体。 偏置信号的频率至多为600 kHz。 结果，与现有技术的方法相比，正离子和负离子的增加数量撞击物体，从而增加处理速率并减少电荷累积。

公开(公告)号：US5366586A

公开(公告)日：1994-11-22

申请号：US012933

申请日：1993-02-03

申请人： Seiji Samukawa

发明人： Seiji Samukawa

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32192 ,  H01J37/32678

摘要： In the ECR plasma generating method, the microwave introduced into the plasma formation chamber is oscillated at frequencies in the range of a predetermined bandwidth, and the magnetic field applied to the introduced microwave has the flux densities in the range corresponding to the frequency bandwidth so as to meet the ECR condition, resulting a high density ECR plasma. The frequency bandwidth is at least +-4% of the center frequency of 2.45 GHz. The gradient of the magnetic field at the ECR area is at most 10 Gauss/cm. When a substrate is processed by the plasma generated by using the ECR, the ECR area is formed at a position at least 5 cms away from the microwave introducing window.

摘要翻译： 在ECR等离子体产生方法中，引入到等离子体形成室中的微波以预定带宽的范围的频率振荡，并且施加到引入的微波的磁场具有在与频带宽度对应的范围内的磁通密度， 以满足ECR条件，产生高密度ECR等离子体。 频率带宽至少为2.45 GHz中心频率的+ -4％。 ECR区域的磁场梯度为10高斯/厘米。 当通过使用ECR产生的等离子体对衬底进行处理时，ECR区域形成在离微波引入窗口至少5厘米的位置。

公开(公告)号：US20100244861A1

公开(公告)日：2010-09-30

申请号：US12725815

申请日：2010-03-17

申请人： Tomohiko Tatsumi ,  Seiji Samukawa

发明人： Tomohiko Tatsumi ,  Seiji Samukawa

IPC分类号： G01R27/08

CPC分类号： G01R19/0061 ,  H05H1/0081

摘要： A plasma monitoring method measures in-situ a resistance of a side wall in a particular pattern and a current flowing in the side wall in the pattern. A monitoring system has two sensors in a plasma chamber. Each sensor has an upper electrode and a lower electrode. An external resistance element is connected only to one of the two sensors. The external resistance element is connected in parallel to the wires extending from the upper and lower electrodes of the sensor concerned. As a result, a resistance between the upper and lower electrodes is different in the two sensors, and two different values of potential difference between the upper and lower electrodes are obtained in-situ. Because a resistance value of the external resistance element is already known, a resistance value of a side wall of a contact hole per one contact hole is obtained in-situ. When the resistance per one contact hole is obtained, an electric current flowing in the side wall of the contact hole per one contact hole can be obtained.

摘要翻译： 等离子体监测方法原位测量特定图案中的侧壁的电阻和在图案中在侧壁中流动的电流。 监测系统在等离子体室中具有两个传感器。 每个传感器具有上电极和下电极。 外部电阻元件仅连接到两个传感器之一。 外部电阻元件与从所述传感器的上部和下部电极延伸的电线并联连接。 结果，两个传感器中的上下电极之间的电阻是不同的，并且原位获得上下电极之间的两个不同的电位差值。 因为外部电阻元件的电阻值是已知的，所以每个接触孔的接触孔的侧壁的电阻值被原位获得。 当获得每个接触孔的电阻时，可以获得在每个接触孔的接触孔的侧壁中流动的电流。

公开(公告)号：US07732783B2

公开(公告)日：2010-06-08

申请号：US12219185

申请日：2008-07-17

申请人： Jun Hashimoto ,  Shinji Kawada ,  Ikuo Kurachi ,  Seiji Samukawa

发明人： Jun Hashimoto ,  Shinji Kawada ,  Ikuo Kurachi ,  Seiji Samukawa

IPC分类号： G01J1/10

CPC分类号： H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ultraviolet light monitoring system includes first and second electrodes, an evaluation subject film and a power source. The first and second electrodes are opposingly disposed and attract holes which are generated in accordance with irradiation of ultraviolet light. The evaluation subject film is formed in a vicinity of the first and second electrodes, and is a subject of evaluation of damage caused by the irradiation of ultraviolet light. The power source, at times of monitoring of the ultraviolet light, applies a predetermined bias to a series path formed by the first electrode, a gap between the first and second electrodes, and the second electrode.

摘要翻译： 紫外线监视系统包括第一和第二电极，评估对象胶片和电源。 第一和第二电极相对设置并且吸引根据紫外线的照射产生的孔。 评估对象膜形成在第一和第二电极附近，并且是评估由紫外线照射引起的损伤的对象。 在监视紫外线的时候，电源对由第一电极形成的串联路径，第一和第二电极与第二电极之间的间隙施加预定的偏压。

公开(公告)号：US07473646B2

公开(公告)日：2009-01-06

申请号：US10568960

申请日：2004-08-26

申请人： Toshiaki Shiraiwa ,  Tetsuya Tatsumi ,  Seiji Samukawa

发明人： Toshiaki Shiraiwa ,  Tetsuya Tatsumi ,  Seiji Samukawa

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32136 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/12

摘要： Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.

摘要翻译： 提供一种能够优选刻蚀特别是用于MRAM的引脚层的PtMn的工艺是一种目标：通过使用脉冲等离子体对包括铂和/或锰的层进行干蚀刻的干式蚀刻方法和MRAM的制造方法 其中干蚀刻方法适用于针层的处理。 MRAM被配置为具有包括由通过堆叠具有固定磁化方向的磁性固定层，隧道势垒层和能够改变磁化方向的磁性层形成的隧道磁阻效应元件组成的磁存储元件的存储部分。

公开(公告)号：US20080169064A1

公开(公告)日：2008-07-17

申请号：US12006375

申请日：2008-01-02

申请人： Seiji Samukawa ,  Fumihiko Oda ,  Yukihiro Morimoto

发明人： Seiji Samukawa ,  Fumihiko Oda ,  Yukihiro Morimoto

IPC分类号： H01L21/306

CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3447

摘要： Provided is a surface-treating apparatus making use of a neutral particle beam, by which a high-quality surface treatment is fundamentally conducted, and a high surface treatment rate is achieved. The surface-treating apparatus serves to conduct a surface treatment of an object to be treated, which is arranged in a vacuum treatment chamber, by a neutral particle beam, and is equipped with a light source for irradiating the object to be treated with light. In the surface-treating apparatus, the light applied to the object to be treated is preferably light including rays having a wavelength of 380 nm or shorter. An illuminance of the rays having a wavelength of 380 nm or shorter on the surface to be treated of the object to be treated is preferably 7 mW/cm2 or higher. The light source is preferably a xenon flash lamp, and an illuminance of the light on the surface to be treated of the object to be treated is preferably 20 mW/cm2 or higher.

摘要翻译： 提供使用中性粒子束的表面处理装置，通过该表面处理装置进行基本的高质量的表面处理，并且实现了高的表面处理速率。 表面处理装置用于通过中性粒子束对布置在真空处理室中的待处理物体进行表面处理，并配备有用于用光照射待处理物体的光源。 在表面处理装置中，施加到待处理物体的光优选为包括波长380nm以下的射线的光。 被处理物的被处理面波长380nm以下的光线的照度优选为7mW / cm 2以上。 光源优选为氙闪光灯，被处理物的被处理面上的光的照度优选为20mW / cm 2以上。

公开(公告)号：US20050185171A1

公开(公告)日：2005-08-25

申请号：US11060501

申请日：2005-02-18

申请人： Seiji Samukawa

发明人： Seiji Samukawa

IPC分类号： H01L21/3065 ,  G01N21/88 ,  H01J37/32 ,  H01L21/205

CPC分类号： H01J37/32935 ,  H01J37/32963

摘要： A real-time monitoring apparatus for a plasma process comprises a plurality of measuring units (10) mounted on a semiconductor wafer, a receiving device (7) for receiving a signal transmitted from each of the measuring units (10), and a data processing apparatus (6) for detecting a condition of the semiconductor wafer (3) based on the received signal. In this apparatus, each of the measuring units (10) includes at least one plasma process detection sensor (11), a light-emitting device (16) for converting an output of the plasma process detection sensor into an optical output, and a power supply (17) for supplying drive power to the light-emitting device (16).

摘要翻译： 一种用于等离子体处理的实时监视装置包括安装在半导体晶片上的多个测量单元（10），用于接收从每个测量单元（10）发送的信号的接收装置（7）和数据处理 用于基于接收信号检测半导体晶片（3）的状态的装置（6）。 在该装置中，每个测量单元（10）包括至少一个等离子体处理检测传感器（11），用于将等离子体处理检测传感器的输出转换为光输出的发光装置（16） 用于向发光装置（16）提供驱动电力的电源（17）。