Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI)
    41.
    发明授权
    Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI) 有权
    同时测量和清洁绝缘体上硅(SOI)上的薄膜

    公开(公告)号:US07006222B2

    公开(公告)日:2006-02-28

    申请号:US10339518

    申请日:2003-01-08

    Inventor: Shankar Krishnan

    CPC classification number: G01J4/00 G01B11/06 G01B11/065

    Abstract: A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.

    Abstract translation: 在诸如绝缘体上硅(SOI)的多层基板上的薄膜上执行单波长椭偏仪(SWE)的系统应用具有小于多层膜的表层的厚度的吸收距离的测量光束, 层基板。 例如,对于SOI衬底,测量光束被选择为具有导致小于表面硅层厚度的吸收距离的波长。 该系统可以包括清洁激光器以提供同时清洁以提高测量精度,而不会不利地影响生产量。 测量光束源可以被配置为提供一个波长的测量光束和较长波长的清洁光束,使得测量光束的吸收深度小于表面层厚度,而清洁光束的吸收深度更大 比表面层厚度。

    Photopolarimeters and spectrophotopolarimaters with multiple diffraction gratings
    42.
    发明申请
    Photopolarimeters and spectrophotopolarimaters with multiple diffraction gratings 失效
    具有多个衍射光栅的光电极和分光光度计

    公开(公告)号:US20050018189A1

    公开(公告)日:2005-01-27

    申请号:US10504796

    申请日:2003-02-13

    CPC classification number: G01J4/04 G01J3/447

    Abstract: In a device for measuring the complete polarization state of light over a spectral bandwidth, an optical input signal (41) with wavelengths of light within a spectral band is incident on two or more diffraction gratings (42, 44, 46, 48), or incident from at least two directions on one or more diffraction gratings (72, 74), and the intensity is measured as a function of wavelength for at least four of the diffraction spectra produced by the grating(s). The polarization state of light is then calculated as a function of wavelength over the spectral bandwidth from the intensity measurements.

    Abstract translation: 在用于在光谱带宽上测量光的完全偏振状态的装置中,光谱波段内的波长的光输入信号(41)入射到两个或更多个衍射光栅(42,44,46,48)上,或 在一个或多个衍射光栅(72,74)上从至少两个方向入射,并且对于由光栅产生的至少四个衍射光谱,测量强度作为波长的函数。 然后,根据强度测量,光的偏振状态被计算为光谱带宽上的波长的函数。

    Substrate thickness determination
    43.
    发明授权
    Substrate thickness determination 有权
    基板厚度测定

    公开(公告)号:US06710890B1

    公开(公告)日:2004-03-23

    申请号:US10375554

    申请日:2003-02-26

    CPC classification number: G01B11/0608

    Abstract: An apparatus for measuring a thickness of a substrate having an upper surface, without contacting the upper surface of the substrate. A platen having a base surface receives the substrate, and a reference surface is disposed at a known first height from the platen surface. A non contact sensor senses the known first height of the reference surface without making physical contact with the reference surface. The non contact sensor further senses a relative difference between the known first height of the reference surface and a second height of the upper surface of the substrate without making physical contact with the upper surface of the substrate. A controller controls the sensor and determines the thickness of the substrate based at least in part on the known first height of the reference surface and the relative difference between the known first height of the reference surface and the second height of the upper surface of the substrate.

    Abstract translation: 一种用于测量具有上表面的基板的厚度而不与基板的上表面接触的装置。 具有基面的台板容纳基板,并且参考表面设置在距压板表面已知的第一高度处。 非接触传感器感测参考表面的已知第一高度,而不与参考表面物理接触。 非接触式传感器进一步感测参考表面的已知第一高度与衬底的上表面的第二高度之间的相对差异,而不与衬底的上表面物理接触。 控制器控制传感器并且至少部分地基于参考表面的已知第一高度和参考表面的已知第一高度与衬底的上表面的第二高度之间的相对差异来确定衬底的厚度 。

    APPARATUS AND METHOD FOR MODIFICATION OF TELECOMMUNICATION VIDEO CONTENT
    46.
    发明申请
    APPARATUS AND METHOD FOR MODIFICATION OF TELECOMMUNICATION VIDEO CONTENT 有权
    电信视频内容修改的装置和方法

    公开(公告)号:US20130342629A1

    公开(公告)日:2013-12-26

    申请号:US13527774

    申请日:2012-06-20

    CPC classification number: H04N7/141 H04N7/157 H04N21/44008 H04N21/8146

    Abstract: A method that incorporates teachings of the subject disclosure may include, for example, utilizing a system including at least one processor for determining a video modification plan for a received video stream of a video call session according to the at least one party associated with the video call session, modifying, by the system, a plurality of background images of the received video stream according to the video modification plan to generate a plurality of modified background images, and generating, by the system, a modified video stream according to the plurality of modified background images. Other embodiments are disclosed.

    Abstract translation: 结合本公开的教导的方法可以包括例如利用包括至少一个处理器的系统,用于根据与视频相关联的至少一个方确定视频呼叫会话的接收视频流的视频修改计划 呼叫会话,由系统修改根据该视频修改方案的接收到的视频流的多个背景图像,以生成多个修改后的背景图像,并且由该系统根据多个修改图像生成修改的视频流 修改背景图片。 公开了其他实施例。

    Reconfigurable spectroscopic ellipsometer
    47.
    发明授权
    Reconfigurable spectroscopic ellipsometer 有权
    可重构光谱椭偏仪

    公开(公告)号:US08446584B2

    公开(公告)日:2013-05-21

    申请号:US13106940

    申请日:2011-05-13

    CPC classification number: G01B11/0641 G01B2210/56 G01N21/211 G01N21/956

    Abstract: A Mueller ellipsometer of the type having a first rotating element on an incident beam side of a sample and a second rotating element on a reflected beam side of the sample and a detector having an integration time, having a controller for selectively and separately adjusting (1) a first angular frequency of the first rotating element and (2) a second angular frequency of the second rotating element.

    Abstract translation: 具有在样品的入射光束侧的第一旋转元件和样品的反射光束侧的第二旋转元件和具有积分时间的检测器的Mueller椭偏仪具有用于选择性和分别地调节(1 )第一旋转元件的第一角频率和(2)第二旋转元件的第二角频率。

    Reconfigurable Spectroscopic Ellipsometer
    48.
    发明申请
    Reconfigurable Spectroscopic Ellipsometer 有权
    可重构光谱椭偏仪

    公开(公告)号:US20120287433A1

    公开(公告)日:2012-11-15

    申请号:US13106940

    申请日:2011-05-13

    CPC classification number: G01B11/0641 G01B2210/56 G01N21/211 G01N21/956

    Abstract: A Mueller ellipsometer of the type having a first rotating element on an incident beam side of a sample and a second rotating element on a reflected beam side of the sample and a detector having an integration time, having a controller for selectively and separately adjusting (1) a first angular frequency of the first rotating element and (2) a second angular frequency of the second rotating element.

    Abstract translation: 具有在样品的入射光束侧的第一旋转元件和样品的反射光束侧的第二旋转元件和具有积分时间的检测器的Mueller椭偏仪具有用于选择性和分别地调节(1 )第一旋转元件的第一角频率和(2)第二旋转元件的第二角频率。

    Cooling Hot-Spots by Lateral Active Heat Transport
    49.
    发明申请
    Cooling Hot-Spots by Lateral Active Heat Transport 审中-公开
    通过横向主动热运输冷却热点

    公开(公告)号:US20090071525A1

    公开(公告)日:2009-03-19

    申请号:US11856201

    申请日:2007-09-17

    CPC classification number: H01L23/38 H01L2924/0002 H01L2924/00

    Abstract: An apparatus includes a thermoelectric cooler adjacent to a surface of a device substrate and including a first set of one or more metal electrodes, a second set of one or more metal electrodes, and one or more semiconductor members. Each member includes a material different from the device substrate and physically joins a corresponding one electrode of the first set to a corresponding one electrode of the second set. The electrodes and at least one member are configured to transport heat to or from a thermal load in a direction parallel to the surface of the device substrate.

    Abstract translation: 一种装置包括邻近器件衬底的表面的热电冷却器,并且包括第一组一个或多个金属电极,第二组一个或多个金属电极和一个或多个半导体部件。 每个构件包括与装置基板不同的材料,并将第一组的对应的一个电极物理地连接到第二组的对应的一个电极。 电极和至少一个构件构造成在平行于器件衬底的表面的方向上将热量传递到热负载或从热负载传输热量。

    PURGE GAS FLOW CONTROL FOR HIGH-PRECISION FILM MEASUREMENTS USING ELLIPSOMETRY AND REFLECTOMETRY
    50.
    发明申请
    PURGE GAS FLOW CONTROL FOR HIGH-PRECISION FILM MEASUREMENTS USING ELLIPSOMETRY AND REFLECTOMETRY 有权
    用于高精度电泳测量的气体流量控制使用ELLIPSOMETRY和REFLECTOMETRY

    公开(公告)号:US20080180698A1

    公开(公告)日:2008-07-31

    申请号:US12019592

    申请日:2008-01-24

    Abstract: An optical method and system for measuring characteristics of a sample using a broadband metrology tool in a purge gas flow environment are disclosed. In the method a beam path for the metrology tool is purged with purge gas at a first flow rate. A surface of the sample is illuminated by a beam of source radiation having at least one wavelength component in a vacuum ultraviolet (VUV) range and/or at least one wavelength component in an ultraviolet-visible (UV-Vis) range. A flow rate of a purge gas is adjusted between the first flow rate for metrology measurements made when the source radiation is in the VUV spectral region and a second flow rate for metrology measurements made when the source radiation is in the UV-Vis spectral region. The system includes a light source, illumination optics, collection optics, detector, a purge gas source and a controller. The purge gas source is configured to supply a flow of purge gas to a beam path in the light source and/or illumination optics and/or sample and/or collection optics and/or detector. The controller is configured to control a flow rate of the purged gas flow in response to an output signal from the detector.

    Abstract translation: 公开了一种用于在吹扫气体流动环境中使用宽带测量工具测量样品的特性的光学方法和系统。 在该方法中,用第一流量的吹扫气体吹扫计量工具的光束路径。 通过在紫外 - 可见(UV-Vis)范围内具有真空紫外(VUV)范围和/或至少一个波长分量的至少一个波长分量的源辐射束照射样品的表面。 当源辐射处于VUV光谱区域时进行的度量测量的第一流量和当源辐射处于UV-Vis光谱区域时进行度量测量的第二流量时,净化气体的流量被调节。 该系统包括光源,照明光学器件,收集光学器件,检测器,吹扫气体源和控制器。 吹扫气体源被配置为向光源和/或照明光学器件和/或样品和/或收集光学元件和/或检测器中的光束路径提供净化气体流。 控制器被配置为响应于来自检测器的输出信号来控制净化气体流量的流量。

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