Abstract:
The present invention provides an inorganic oxide made of MLn2QR4O12, where M is at least one element selected from the group consisting of Mg, Ca, Sr, and Ba; Ln is at least one rare earth element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; Q is at least one element selected from the group consisting of Si, Ge, Sn, and Pb,; and R is at least one element selected from the group consisting of B, Al, Ga, In, and Tl. This inorganic oxide serves as a phosphor or a phosphor host and if it contains ions capable of being the luminescent center, it becomes a phosphor emitting fluorescent light. Thus, a novel oxide that can be a phosphor host of a high efficiency phosphor or the phosphor itself and a novel phosphor are provided.
Abstract translation:本发明提供了一种由MLn 2 O 2 O 12 O 12制成的无机氧化物,其中M是选自以下的至少一种元素: Mg,Ca,Sr和Ba; Ln是选自Sc,Y,La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu中的至少一种稀土元素; Q是选自Si,Ge,Sn和Pb中的至少一种元素; 并且R是选自B,Al,Ga,In和Tl中的至少一种元素。 该无机氧化物用作荧光体或荧光体主体,如果含有能够作为发光中心的离子,则成为发出荧光的荧光体。 因此,提供了可以是高效磷光体的荧光体主体或荧光体本身和新型荧光体的新型氧化物。
Abstract:
The present invention provides a plasma display device that has light emission properties with short persistence where green light has a persistence time of 3.5 msec or less, that is excellent in luminance, luminance degradation resistance, and color tone, and that is suitable for, for example, a stereoscopic image display device. The present invention provides a plasma display device including a plasma display panel in which a pair of substrates at least whose front side is transparent are disposed to oppose each other so as to form a discharge space between the substrates, barrier ribs for dividing the discharge space into a plurality of discharge spaces are disposed on at least one substrate, electrode groups are disposed on the substrates so as to produce discharge in the discharge spaces divided with the barrier ribs, and a green phosphor layer that emits light by the discharge is provided, wherein the green phosphor layer includes a mixed phosphor containing a short persistence Mn2+-activated green phosphor with a 1/10 persistence time of more than 2 msec but less than 5 msec and either a Ce3+-activated green phosphor or an Eu2+-activated green phosphor that has a light emission peak in a wavelength range of not less than 490 nm and less than 560 nm.
Abstract:
A light emitting device includes: a first semiconductor light emitting element having a solid-state blue light emitting element that emits blue light with a light emission peak in a wavelength range from 420 nm to less than 480 nm, and a first red phosphor layer that covers the solid-state blue light emitting element and includes a first red phosphor that emits red light with a light emission peak in a wavelength range from 600 nm to less than 680 nm; and a second semiconductor light emitting element having a solid-state green light emitting element that emits green light with a light emission peak in a wavelength range from 500 nm to less than 550 nm, and a second red phosphor layer that covers the solid-state green light emitting element and includes a second red phosphor that emits red light with a light emission peak in a wavelength range from 600 nm to less than 680 nm.
Abstract:
A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
Abstract:
A light-emitting device of the present application includes a light-emitting element and a phosphor layer. Output light of the device is white light, which contains red, green, and blue light-emitting components emitted by red and green phosphors and a blue light-emitting element, respectively. The phosphor layer includes a phosphor such as a red phosphor, which is a nitridoaluminosilicate-based nitride phosphor, and a green phosphor. The red and green phosphors and the blue light-emitting element have emission peaks from 600 nm to less than 660 nm, from 500 to less than 560 nm, and from 440 nm to less than 500 nm, respectively. The phosphor in the phosphor layer has an excitation peak at a wavelength shorter than that of the emission peak of light emitted by the blue light-emitting element. The phosphor is activated with Eu2+ or Ce3+.
Abstract:
A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.
Abstract:
A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.
Abstract:
The semiconductor light emitting device is composed of a combination of a near ultraviolet LED and a phosphor layer including a plurality of phosphors for absorbing near ultraviolet emitted by the near ultraviolet LED and for emitting fluorescence having an emission peak in a visible wavelength region, and the phosphor layer includes four kinds of phosphors, that is, a blue-based phosphor, a green-based phosphor, a red-based phosphor and a yellow-based phosphor. Thus, lowering of luminous flux derived from red-based light with low luminosity is compensated by yellow-based light with comparatively high luminosity, and the resultant white-based light can be well color balanced, and hence, a semiconductor light emitting device emitting white-based light with high luminous flux and a large Ra can be obtained.