Abstract:
The present invention provides a plasma display device that has light emission properties with short persistence where green light has a persistence time of 3.5 msec or less, that is excellent in luminance, luminance degradation resistance, and color tone, and that is suitable for, for example, a stereoscopic image display device. The present invention provides a plasma display device including a plasma display panel in which a pair of substrates at least whose front side is transparent are disposed to oppose each other so as to form a discharge space between the substrates, barrier ribs for dividing the discharge space into a plurality of discharge spaces are disposed on at least one substrate, electrode groups are disposed on the substrates so as to produce discharge in the discharge spaces divided with the barrier ribs, and a green phosphor layer that emits light by the discharge is provided, wherein the green phosphor layer includes a mixed phosphor containing a short persistence Mn2+-activated green phosphor with a 1/10 persistence time of more than 2 msec but less than 5 msec and either a Ce3+-activated green phosphor or an Eu2+-activated green phosphor that has a light emission peak in a wavelength range of not less than 490 nm and less than 560 nm.
Abstract:
A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
Abstract:
A light-emitting device of the present application includes a light-emitting element and a phosphor layer. Output light of the device is white light, which contains red, green, and blue light-emitting components emitted by red and green phosphors and a blue light-emitting element, respectively. The phosphor layer includes a phosphor such as a red phosphor, which is a nitridoaluminosilicate-based nitride phosphor, and a green phosphor. The red and green phosphors and the blue light-emitting element have emission peaks from 600 nm to less than 660 nm, from 500 to less than 560 nm, and from 440 nm to less than 500 nm, respectively. The phosphor in the phosphor layer has an excitation peak at a wavelength shorter than that of the emission peak of light emitted by the blue light-emitting element. The phosphor is activated with Eu2+ or Ce3+.
Abstract:
A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.
Abstract:
The semiconductor light emitting device is composed of a combination of a near ultraviolet LED and a phosphor layer including a plurality of phosphors for absorbing near ultraviolet emitted by the near ultraviolet LED and for emitting fluorescence having an emission peak in a visible wavelength region, and the phosphor layer includes four kinds of phosphors, that is, a blue-based phosphor, a green-based phosphor, a red-based phosphor and a yellow-based phosphor. Thus, lowering of luminous flux derived from red-based light with low luminosity is compensated by yellow-based light with comparatively high luminosity, and the resultant white-based light can be well color balanced, and hence, a semiconductor light emitting device emitting white-based light with high luminous flux and a large Ra can be obtained.
Abstract:
The present invention provides a plasma display device that has light emission properties with short persistence where green light has a persistence time of 3.5 msec or less, that is excellent in luminance, luminance degradation resistance, and color tone, and that is suitable for, for example, a stereoscopic image display device. The present invention provides a plasma display device including a plasma display panel in which a pair of substrates at least whose front side is transparent are disposed to oppose each other so as to form a discharge space between the substrates, barrier ribs for dividing the discharge space into a plurality of discharge spaces are disposed on at least one substrate, electrode groups are disposed on the substrates so as to produce discharge in the discharge spaces divided with the barrier ribs, and a green phosphor layer that emits light by the discharge is provided, wherein the green phosphor layer includes a mixed phosphor containing a short persistence Mn2+-activated green phosphor with a 1/10 persistence time of more than 2 msec but less than 5 msec and either a Ce3+-activated green phosphor or an Eu2+-activated green phosphor that has a light emission peak in a wavelength range of not less than 490 nm and less than 560 nm.
Abstract:
A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.
Abstract:
A nitridosilicate-based compound is produced by reacting an alkaline-earth metal compound capable of generating an alkaline-earth metal oxide by heating or a rare earth compound capable of generating a rare earth oxide by heating with at least a silicon compound, while the alkaline-earth metal compound or the rare earth compound is being reduced and nitrided by the reaction with carbon in an atmosphere of nitriding gas. Because of this, a nitridosilicate-based compound of high quality can be produced industrially at low cost.
Abstract:
A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1−a1−b1−xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
Abstract translation:芯片型发光半导体器件包括:基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13(半透明树脂)的混合物制成的发光层3。 黄/黄色荧光体颗粒2是一种硅酸盐荧光体,其吸收由蓝色LED1发射的蓝色光,以发射在550nm至600nm的波长范围内具有主发光峰的荧光,并且其包含作为主要 组分,由化学式表示的化合物:(Sr 1-a 1-b 1-x Ba)a a1 Ca 2 Sb x x (0 <= a1 <= 0.3,0 <= b1 <= 0.8和0
Abstract:
A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
Abstract translation:芯片型发光半导体器件包括:基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13(半透明树脂)的混合物制成的发光层3。 黄/黄色荧光体颗粒2是一种硅酸盐荧光体,其吸收由蓝色LED1发射的蓝色光,以发射在550nm至600nm的波长范围内具有主发光峰的荧光,并且其包含作为主要 组分,由化学式表示的化合物:(Sr 1-a 1-b 1-x Ba)a a1 Ca 2 Sb x x (0 <= a1 <= 0.3,0 <= b1 <= 0.8和0