公开(公告)号：US10407309B2

公开(公告)日：2019-09-10

申请号：US14582256

申请日：2014-12-24

Applicant: SunEdison, Inc.

Inventor： Puneet Gupta ,  Yue Huang ,  Satish Bhusarapu

IPC: C01B33/027 ,  C01B33/03

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

公开(公告)号：US10252916B2

公开(公告)日：2019-04-09

申请号：US14840514

申请日：2015-08-31

Applicant: SunEdison, Inc.

Inventor： Sathy Ponnuswamy ,  Nageswara Reddy Kota ,  Satish Bhusarapu ,  Puneet Gupta

IPC: C01B33/027 ,  C01B33/107 ,  C01B33/04 ,  B01J19/24 ,  B01D3/14

Abstract: Methods for separating halosilanes that involve use of a distillation column having a partition that divides the column into portions for producing three product fractions are disclosed. Methods and systems for producing silane by disproportionation of halosilanes that use such columns and methods for producing polycrystalline silicon are also disclosed.

公开(公告)号：US20170338768A1

公开(公告)日：2017-11-23

申请号：US15522662

申请日：2015-10-26

Applicant: SUNEDISON, INC.

Inventor： Marath Prakash ,  Anurag Mapati ,  Bharat Malapareddy ,  Selvam Ramasamy ,  Manickam Narayanan ,  Rajesh Manapat ,  Nagendra Srinivas Cherukupalli

IPC: H02S20/23 ,  F16B2/12 ,  F24J2/52 ,  H02S30/10 ,  F24J2/46

CPC classification number: H02S20/23 ,  F16B2/12 ,  F24S25/615 ,  F24S25/636 ,  F24S2025/6003 ,  H02S30/10 ,  Y02B10/12 ,  Y02B10/20 ,  Y02E10/47

Abstract: Clamping assemblies for securing a solar module to a structure include a base, a bracket, and a fastener. The base may be attached to a multi-planar roof of the structure. The base and the bracket together define a mounting region for receiving a portion of the solar module. The fastener connects the base and the clamp and can selectively apply a clamping force to the portion of the solar module.

公开(公告)号：US20170247809A1

公开(公告)日：2017-08-31

申请号：US15053870

申请日：2016-02-25

Applicant: SunEdison, Inc.

Inventor： Stephan Haringer ,  Gianni Dell'Amico ,  Giancarlo Zago ,  Renzo Odorizzi ,  Giorgio Agostini ,  Marco Zardoni

IPC: C30B15/04 ,  C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  C30B15/00 ,  C30B15/12

CPC classification number: C30B15/04 ,  C30B15/002 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

Abstract: A system for growing silicon crystal structures includes a housing defining a growth chamber and a feed system connected to the housing for delivering silicon particles to the growth chamber. The feed system includes a container for holding the silicon particles. The container includes an outlet for discharging the silicon particles. The feed system also includes a channel connected to the outlet such that silicon particles discharged from the container flow through the channel. The feed system further includes a separation valve connected to the channel and to the housing. The separation valve is configured such that a portion of the feed system rotates relative to the housing.

公开(公告)号：US20170016142A1

公开(公告)日：2017-01-19

申请号：US14802729

申请日：2015-07-17

Applicant: SunEdison, Inc.

Inventor： Jihong Chen ,  Tirumani N. Swaminathan

IPC: C30B15/04 ,  C30B15/10 ,  C30B29/06 ,  C30B15/00

CPC classification number: C30B15/04 ,  C30B15/00 ,  C30B15/002 ,  C30B15/02 ,  C30B15/10 ,  C30B29/06

Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.

Abstract translation: 公开了在坩埚接触点处降低侵蚀速率的晶体拉拔器中的硅锭的生产。

公开(公告)号：US20160348983A1

公开(公告)日：2016-12-01

申请号：US14723572

申请日：2015-05-28

Applicant: SunEdison, Inc.

Inventor： Peter Spicka ,  Puneet Gupta

IPC: F28D7/10 ,  B01J8/24 ,  C01B33/027 ,  F28F27/00

Abstract: Heat exchange apparatus and, particularly, heat exchangers having a baffled cooling jacket are disclosed. Methods for using the exchangers including methods that involve cooling an effluent gas produced from a fluidized bed reactor for producing polycrystalline silicon are also disclosed.

Abstract translation: 热交换装置，特别是具有挡板式冷却套的热交换器。 还公开了使用包括冷却由流化床反应器产生的多晶硅产生的废气的方法的交换器的方法。

公开(公告)号：US20160184909A1

公开(公告)日：2016-06-30

申请号：US14983954

申请日：2015-12-30

Applicant: SunEdison, Inc.

Inventor： Omid Rezvanian ,  Larry Wayne Shive ,  Rituraj Nandan ,  Dale A. Witte ,  Edward Calvin

IPC: B23D65/00 ,  B28D5/04 ,  B23D61/18

CPC classification number: B23D65/00 ,  B23D61/185 ,  B28D5/045

Abstract: A method for designing a diamond coated wire for use in a wafer slicing system includes adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated, wherein the intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and wherein penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using a diamond coated wire having an associated diamond size distribution. The method may include adjusting the intermediate diamond size distribution until a final diamond size distribution is generated, wherein the final diamond size distribution has a maximum diamond grit size that is substantially equal to a predetermined maximum diamond grit size, and manufacturing the diamond coated wire such that the diamond coated wire has a plurality of diamond grits that fit the final diamond size distribution.

Abstract translation: 用于设计用于晶片切片系统的金刚石涂层线的方法包括调整初始金刚石尺寸分布直到产生中间金刚石尺寸分布，其中中间金刚石尺寸分布具有小于或等于预定的相应模拟穿透厚度值 穿透厚度值，并且其中穿透厚度是与使用具有相关联的金刚石尺寸分布的金刚石涂层线切割锭时将发生的地下损伤深度成比例的参数。 该方法可以包括调整中间金刚石尺寸分布，直到产生最终的金刚石尺寸分布，其中最终金刚石尺寸分布具有基本上等于预定最大金刚石砂粒尺寸的最大金刚石砂粒尺寸，并且制造金刚石涂层线 金刚石涂层线材具有适合最终金刚石尺寸分布的多个金刚石砂粒。

公开(公告)号：US20160068399A1

公开(公告)日：2016-03-10

申请号：US14840514

申请日：2015-08-31

Applicant: SunEdison, Inc.

Inventor： Sathy Ponnuswamy ,  Nageswara Reddy Kota ,  Satish Bhusarapu ,  Puneet Gupta

IPC: C01B33/027 ,  B01D3/14 ,  B01J19/24 ,  C01B33/107 ,  C01B33/04

CPC classification number: C01B33/027 ,  B01D3/141 ,  B01J19/2445 ,  B01J2219/24 ,  C01B33/04 ,  C01B33/107 ,  C01B33/1071 ,  C01B33/10778

Abstract: Methods for separating halosilanes that involve use of a distillation column having a partition that divides the column into portions for producing three product fractions are disclosed. Methods and systems for producing silane by disproportionation of halosilanes that use such columns and methods for producing polycrystalline silicon are also disclosed.

Abstract translation: 公开了使用蒸馏塔的分离卤代硅烷的方法，所述蒸馏塔具有将塔分成用于产生三种产物馏分的部分的隔板。 还公开了通过歧化使用这种塔的卤代硅烷生产硅烷的方法和系统以及用于生产多晶硅的方法。

公开(公告)号：US20160024685A1

公开(公告)日：2016-01-28

申请号：US14341580

申请日：2014-07-25

Applicant: SunEdison, Inc.

Inventor： Tirumani Swaminathan

IPC: C30B15/14 ,  C30B15/12 ,  C30B29/06 ,  C30B15/00

CPC classification number: C30B15/14 ,  C30B15/002 ,  C30B15/12 ,  C30B15/206 ,  C30B29/06 ,  Y10T117/1052 ,  Y10T117/1068

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

Abstract translation: 提供了用于从熔体生长晶锭的系统。 该系统包括坩埚组件，第一加热器，第二加热器和无源加热器。 坩埚组件包括坩埚和将熔体的外部熔体区域与熔体的内部熔融区域分开的堰。 第一加热器构造成通过坩埚传导来向熔体提供热能。 第二加热器被配置成产生热辐射。 被动加热器被配置为通过将由第二加热器产生的热辐射传递到外部熔融区域而将热能提供给外部熔融区域。

公开(公告)号：US20150329366A1

公开(公告)日：2015-11-19

申请号：US14650959

申请日：2013-12-27

Applicant: SunEdison, Inc.

Inventor： Jia Wei CHEW ,  Baisheng ZOU

IPC: C01B33/021

CPC classification number: C01B33/021 ,  B01J8/1809 ,  B01J2208/00017 ,  B01J2208/00672 ,  B01J2219/00247

Abstract: A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems. Varying the width of the particle size distribution in the reactor alters the temperature gradient within the reactor, thereby providing a means of a better control of internal temperature profiles and hence better reactor performance.

Abstract translation: 公开了一种改善多晶硅流化床反应器运行的方法。 本发明涉及气固流化床系统中轴向温度梯度的优化。 改变反应器中的粒度分布的宽度改变反应器内的温度梯度，从而提供更好地控制内部温度分布并因此提高反应器性能的手段。