摘要:
A display device is disclosed. The pixels of the display are formed so that a chromaticity range of the red organic emission layer satisfies an NTSC standard if λpr=3.93557E−03 Wr2+1.07200E−01 Wr+6.10199E+02 and λpr=610 nm, a chromaticity range of the green organic emission layer satisfies the NTSC standard if 3.33879E−03 Wg2+3.03246E−02 Wg+5.18496E+02≦λpg≦−5.09468E−03 Wg2+4.45905E−02 Wg+5.37887E+02, 515 nm≦λpg≦540 nm, and Wg
摘要:
An organic light emitting diode (OLED) device is disclosed. In one embodiment, the OLED device includes: i) a substrate and ii) a first thin film formed on the substrate, wherein the first thin film comprises first and second surfaces opposing each other, wherein the first surface contacts the substrate, and wherein a plurality of protrusions and depressions are alternately formed on the second surface of the first thin film. The OLED device may further include a second thin film formed on the protrusions and depressions of the first thin film, a first electrode formed on the second thin film, a light emitting member formed on the first electrode and a second electrode formed on the organic light emitting member.
摘要:
A white organic light emitting device (OLED) includes an anode and a cathode spaced apart from each other; a blue light emitting layer, a green light emitting layer, and a red light emitting layer sequentially formed between the anode and the cathode; a first buffer layer formed between the blue light emitting layer and the green light emitting layer, and having a HOMO (highest occupied molecular orbital)−LOMO (lowest occupied molecular orbital) energy gap higher than or equal to that of the adjacent light emitting layers; and a second buffer layer formed between the green light emitting layer and the red light emitting layer, and having a LOMO energy level higher than that of the red light emitting layer.
摘要:
A pixel structure and an organic light emitting device including the pixel structure has at least one electronic material layer arranged between a lower electrode and an upper electrode. The pixel structure includes the lower electrode arranged in a desired pattern on a substrate and a bank covering the substrate on which the lower electrode is arranged, and defining an opening portion to expose at least a portion of the lower electrode. The area of the opening portion is greater than that of the exposed portion of the lower electrode. The pixel structure further includes an electronic material layer arranged in the opening portion and covering an upper surface of the lower electrode, and the upper electrode arranged on the electronic material layer.
摘要:
An organic electroluminescent device includes: a substrate; a plurality of first electrodes arranged on the substrate; a plurality of banks arranged on the substrate and the first electrodes to define pixels on the first electrodes, the plurality of banks being of an inorganic material; a plurality of separators arranged in stripe shapes on the plurality of banks between the pixels, the plurality of separators being of an organic material; organic Emitting Material Layers (organic EMLs), each having a predetermined color, the organic EMLs being arranged within each of the pixels; and a plurality of second electrodes arranged on the organic EMLs, the plurality of banks, and the plurality of separators.
摘要:
A cadmium sulfide nanocrystal, wherein the cadmium sulfide nanocrystal shows maximum luminescence peaks at two or more wavelengths and most of the atoms constituting the nanocrystal are present at the surface of the nanocrystal to form defects.
摘要:
A tray mechanism and a disk drive employing the tray mechanism. The tray mechanism includes a driving member rotatably coupled to a spindle motor; a pinion meshed with a rack provided at a surface of a tray to load the tray onto and unload the tray from a main frame; a pivotable plate pivotally provided at a shaft of the driving member, and having a connector which couples the driving member and the rack; and a limiting member provided on the main frame for limiting a pivotal range of the pivotable plate.
摘要:
A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. The luminescent efficiency and luminescence intensity of the electroluminescence device can be enhanced, and the electrical properties of the electroluminescence device can be controlled by the use of the multilayer of nanocrystals as a luminescent layer.
摘要:
A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. The luminescent efficiency and luminescence intensity of the electroluminescence device can be enhanced, and the electrical properties of the electroluminescence device can be controlled by the use of the multilayer of nanocrystals as a luminescent layer.
摘要:
A semiconductor memory device includes a device isolation layer formed in a semiconductor substrate to define a plurality of active regions. Floating gates are disposed on the active regions. A control gate line overlaps top surfaces of the floating gates and crosses over the active regions. The control gate line has an extending portion disposed in a gap between adjacent floating gates and overlapping sidewalls of the adjacent floating gates. First spacers are disposed on the sidewalls of the adjacent floating gates. Each of the first spacers extends along a sidewall of the active region and along a sidewall of the device isolation layer. Second spacers are disposed between outer sidewalls of the first spacers and the extending portion and are disposed above the device isolation layer. An electronic device including a semiconductor memory device and a method of fabricating a semiconductor memory device are also disclosed.