公开(公告)号：US20120128225A1

公开(公告)日：2012-05-24

申请号：US13290227

申请日：2011-11-07

申请人： Takeshi Noda

发明人： Takeshi Noda

IPC分类号： G06K9/00

CPC分类号： G06T11/006 ,  G06T2211/436

摘要： An image processing apparatus which processes an image obtained by tomosynthesis shooting by using a radiation source and a two-dimensional detector. The image processing apparatus includes an obtaining unit configured to obtain a plurality of projection data output from the two-dimensional detector upon tomosynthesis shooting; and a reconstruction unit configured to perform analytical reconstruction processing of a tomogram of a subject from the plurality of projection data obtained by tomosynthesis shooting without transforming the projection data into virtual projection data on a virtual CT detection plane virtually set to be perpendicular to a radiation center direction of the radiation source.

摘要翻译： 一种图像处理装置，其通过使用辐射源和二维检测器处理通过断层摄影拍摄获得的图像。 图像处理装置包括获取单元，被配置为在层析合成拍摄时获得从二维检测器输出的多个投影数据; 以及重建单元，被配置为从通过层析合成拍摄获得的多个投影数据中对被摄体的断层图像进行分析重建处理，而不将投影数据变换为虚拟设置为垂直于辐射中心的虚拟CT检测平面上的虚拟投影数据 辐射源的方向。

公开(公告)号：US20110207255A1

公开(公告)日：2011-08-25

申请号：US13099804

申请日：2011-05-03

申请人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC分类号： H01L33/02

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/0011 ,  H01L51/5052 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/56 ,  H01L2251/5315

摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

公开(公告)号：US07981701B2

公开(公告)日：2011-07-19

申请号：US11030065

申请日：2005-01-07

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L22/12 ,  H01L27/1214 ,  H01L27/1285 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.

摘要翻译： 形成半导体薄膜的方法包括用于检测横向晶体的高灵敏度检测方法和结晶方法。 在结晶方法中，激光SXL的基于时间的脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB1的同时，在所需区域中形成近似带状晶体硅膜SPSI。 在检查方法中，在激光SXL关闭之后，将检查光束PRO1照射到基板。 如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。 检测光束PRO1由突出部TOKI散射并由检测器观测。 如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

公开(公告)号：US07663305B2

公开(公告)日：2010-02-16

申请号：US10602980

申请日：2003-06-24

申请人： Shunpei Yamazaki ,  Takeshi Noda

发明人： Shunpei Yamazaki ,  Takeshi Noda

IPC分类号： H01J1/62

CPC分类号： H01L27/3246 ,  H01L27/3272 ,  H01L51/0005 ,  H01L51/5218 ,  H01L51/5228 ,  H01L51/5253 ,  H01L51/5284

摘要： In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (61) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film (61) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode (66b) whereas an organic resin film (67) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials.

摘要翻译： 在顶部发光结构中，存在在发光区域以外的区域中设置布线，TFT等的问题，使得由布线反射的光到达观察者的眼睛。 本发明通过在除了发光区域之外的区域中设置吸光多层膜（61）来防止被电线反射的光到达观察者的眼睛。 具体而言，吸光性多层膜（61）用作覆盖第一电极（66b）的端部的分隔壁（也称为隔堤或隔壁）的上层，有机树脂膜（67）为 用作分隔壁的下层。 本发明的分隔壁的特征在于由不同材料形成的3层以上的层叠体。

公开(公告)号：US20090134399A1

公开(公告)日：2009-05-28

申请号：US12331679

申请日：2008-12-10

申请人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC分类号： H01L33/00 ,  H01J1/62

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/0011 ,  H01L51/5052 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/56 ,  H01L2251/5315

摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

公开(公告)号：US20090072695A1

公开(公告)日：2009-03-19

申请号：US12281717

申请日：2007-05-25

申请人： Taro Hiroike ,  Akira Hayama ,  Takeshi Noda ,  Hideaki Mitsutake

发明人： Taro Hiroike ,  Akira Hayama ,  Takeshi Noda ,  Hideaki Mitsutake

IPC分类号： H01J1/88

CPC分类号： H01J29/028 ,  H01J29/864 ,  H01J31/127 ,  H01J2329/863 ,  H01J2329/8635 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/866

摘要： This is to provide an image display device using a spacer 103 which can reduce an influence which charge has on an electron orbit greatly without depending on electroconductivity of the spacer 103 itself, and a characteristic of a material by making effectual charge amount zero by controlling positive and negative charge distributions generated on a surface of the spacer 103. This is an image display device using a spacer 103 on a main surface of which concavo-convex structure 106 is formed, the spacer 103 having the concavo-convex structure 106 which can cancel mutually positive charge in a convex portion of the concavo-convex structure 106, and negative charge in a concave portion.

摘要翻译： 这是为了提供使用间隔物103的图像显示装置，其可以在不依赖于间隔物103本身的导电性的情况下大大降低电荷对电子轨道的影响，并且通过控制正的方式使有效的电荷量为零，从而使材料的特性 以及在间隔件103的表面上产生的负电荷分布。这是在形成有凹凸结构106的主表面上使用间隔件103的图像显示装置，具有可以取消的凹凸结构106的间隔件103 凹凸结构106的凸部中的相互正电荷，凹部的负电荷。

公开(公告)号：US07456428B2

公开(公告)日：2008-11-25

申请号：US11711623

申请日：2007-02-28

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L29/04

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μos。

公开(公告)号：US07446742B2

公开(公告)日：2008-11-04

申请号：US11041264

申请日：2005-01-25

申请人： Takeshi Noda ,  Ryota Fukumoto

发明人： Takeshi Noda ,  Ryota Fukumoto

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G3/3291 ,  G09G2300/0465 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2320/0295 ,  G09G2320/043 ,  H01L27/1296 ,  H01L27/3262 ,  H01L27/3276

摘要： A light emitting device is provided where an area occupied by capacitors is decreased, luminance variations of light emitting elements caused by characteristics variations or fluctuations of the gate voltage Vgs of driving TFTs can be suppressed. Each of multiple pixels includes a light emitting element, a first transistor for determining a current value supplied thereto, a second transistor for selecting emission/non-emission thereof according to video signals, a first power supply line, and a second power supply line shared by the multiple pixels. In addition, a compensation circuit is provided each of which includes a third transistor whose gate and drain are connected to the second power supply line, and a fourth transistor for controlling the connection between a third power supply line and the gate and drain of the third transistor. The first and second transistors are connected in series between the light emitting element and the first power supply line, and the gate of the first transistor is connected to the second power supply line.

摘要翻译： 提供了一种发光器件，其中由电容器占据的面积减小，可以抑制由驱动TFT的栅极电压Vgs的特性变化或波动引起的发光元件的亮度变化。 多个像素中的每一个包括发光元件，用于确定提供给其的电流值的第一晶体管，用于根据视频信号选择发光/不发光的第二晶体管，第一电源线和第二电源线共享 由多个像素。 此外，提供了一种补偿电路，每个补偿电路包括栅极和漏极连接到第二电源线的第三晶体管，以及用于控制第三电源线与第三电源线的栅极和漏极之间的连接的第四晶体管 晶体管。 第一和第二晶体管串联在发光元件和第一电源线之间，第一晶体管的栅极连接到第二电源线。

公开(公告)号：US20080176351A1

公开(公告)日：2008-07-24

申请号：US11843693

申请日：2007-08-23

申请人： Hideaki Shimmoto ,  Takahiro Kamo ,  Takeshi Noda ,  Takuo Kaitoh ,  Eiji Oue

发明人： Hideaki Shimmoto ,  Takahiro Kamo ,  Takeshi Noda ,  Takuo Kaitoh ,  Eiji Oue

IPC分类号： H01L21/00

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L29/04

摘要： The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction. The first region and the second region set sizes thereof at a position where the radiation of the energy beam is finished smaller than sizes thereof at a position where the radiation of the energy beam is started. The second region includes a portion where the second region overlaps the first region and a portion where the second region does not overlap the first region.

摘要翻译： 本发明提供一种显示装置的制造方法，其可以防止在基板上形成这样的假单晶硅区域时具有带状晶体的伪单晶区域的尺寸的减小。 在形成在衬底上的半导体膜的预设区域上形成具有带状晶体的伪单晶的步骤包括：通过在移动辐射的同时将能量束照射到半导体膜的第一区域来形成伪单晶的步骤 能量束在第一方向的位置，以及通过在与第一方向相反的第二方向移动能量束的辐射位置的同时将能量束照射到半导体膜的第二区域来形成伪单晶的步骤 。 第一区域和第二区域在能量束的辐射被完成的位置处的尺寸设定为小于能量束的辐射开始的位置处的尺寸。 第二区域包括第二区域与第一区域重叠的部分和第二区域与第一区域不重叠的部分。

公开(公告)号：US20080050893A1

公开(公告)日：2008-02-28

申请号：US11882828

申请日：2007-08-06

申请人： Hideaki Shimmoto ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda ,  Takuo Kaitoh

发明人： Hideaki Shimmoto ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L21/479

CPC分类号： H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L27/1285

摘要： A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.

摘要翻译： 一种制造显示装置的方法，通过在显示区域中形成具有使用非晶硅的TFT器件的多个像素，从而在衬底的显示区域的外侧使非晶硅脱氢和多晶化时提高多晶硅的质量 并且在显示区域的外部形成具有使用多晶硅的半导体器件的多个驱动电路，该方法包括仅在用于形成驱动电路的区域中的非晶硅上照射第一连续振荡激光，以及 其周边区域进行脱氢，然后仅将第二连续振荡区域照射到脱氢区域以将非晶硅多晶化，其中第一连续振荡激光器照射的区域比第二连续振荡区域 激光被照射。