公开(公告)号：US20070155140A1

公开(公告)日：2007-07-05

申请号：US11711623

申请日：2007-02-28

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

公开(公告)号：US07202144B2

公开(公告)日：2007-04-10

申请号：US11007188

申请日：2004-12-09

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L21/20

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

公开(公告)号：US20050170618A1

公开(公告)日：2005-08-04

申请号：US11007188

申请日：2004-12-09

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： G02F1/1368 ,  C30B1/06 ,  G02F1/133 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

公开(公告)号：US07456428B2

公开(公告)日：2008-11-25

申请号：US11711623

申请日：2007-02-28

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L29/04

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μos。

公开(公告)号：US20050169330A1

公开(公告)日：2005-08-04

申请号：US10987003

申请日：2004-11-15

申请人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L21/324 ,  B23K26/073 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268 ,  H01L29/04 ,  H01L29/786 ,  H01S3/00 ,  H01L21/00 ,  H01L21/84 ,  H01L21/76 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/02691 ,  B23K26/0738 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L29/04 ,  H01L29/78675

摘要： When a laser bean temporally modulated in amplitude by a modulator is shaped into a long and narrow beam by a beam shaper, the scanning-direction size of the long and narrow beam shaped by the beam shaper is selected to be in a range of from 2 to 10 microns, preferably in a range of from 2 to 4 microns and the scanning speed of the beam is selected to be in a range of from 300 to 1000 mm/s, preferably in a range of from 500 to 1000 m/s. As a result, damage of the silicon thin film can be suppressed while energy utilizing efficiency of the laser beam can be improved. Accordingly, laterally grown crystals (belt-like crystals) improved in throughput can be obtained on a required region of a substrate scanned and irradiated with the laser beam.

摘要翻译： 当通过调制器在振幅时间上调制的激光束通过光束整形器成形为长而窄的光束时，由光束整形器成形的长而窄的光束的扫描方向尺寸被选择在2 至10微米，优选在2至4微米的范围内，并且光束的扫描速度选择在300至1000mm / s的范围内，优选在500至1000m / s的范围内。 结果，可以抑制硅薄膜的损伤，同时提高激光束的能量利用效率。 因此，可以在扫描并照射激光束的基板的所需区域上获得提高生产量的横向生长的晶体（带状晶体）。

公开(公告)号：US20050214959A1

公开(公告)日：2005-09-29

申请号：US11030065

申请日：2005-01-07

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/66 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L22/12 ,  H01L27/1214 ,  H01L27/1285 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor thin film. includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.

摘要翻译： 一种形成半导体薄膜的方法。 包括用于检测横向晶体的高灵敏度检查方法和结晶方法。 在结晶方法中，激光SXL的时间脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB 1的同时，在所需区域中形成近似带状晶体硅膜SPSI。 在检查方法中，在激光SXL关闭之后，将检查光束PRO 1照射到基板。 如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。 检测光束PRO 1由突出部TOKI散射并由检测器观测。 如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

公开(公告)号：US07193693B2

公开(公告)日：2007-03-20

申请号：US10991482

申请日：2004-11-19

申请人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

发明人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

IPC分类号： G01N21/00 ,  G01J1/00 ,  B23K26/06

CPC分类号： B23K26/073 ,  B23K26/702 ,  H01L27/14625

摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing.In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.

摘要翻译： 提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号 。 入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件， 基于信号处理的结果。 以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

公开(公告)号：US07981701B2

公开(公告)日：2011-07-19

申请号：US11030065

申请日：2005-01-07

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L22/12 ,  H01L27/1214 ,  H01L27/1285 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.

摘要翻译： 形成半导体薄膜的方法包括用于检测横向晶体的高灵敏度检测方法和结晶方法。 在结晶方法中，激光SXL的基于时间的脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB1的同时，在所需区域中形成近似带状晶体硅膜SPSI。 在检查方法中，在激光SXL关闭之后，将检查光束PRO1照射到基板。 如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。 检测光束PRO1由突出部TOKI散射并由检测器观测。 如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

公开(公告)号：US20050170569A1

公开(公告)日：2005-08-04

申请号：US10991482

申请日：2004-11-19

申请人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

发明人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

IPC分类号： G02F1/1345 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/42 ,  G02F1/136 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/38 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/84 ,  H01L29/786

CPC分类号： B23K26/073 ,  B23K26/702 ,  H01L27/14625

摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing. In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.

摘要翻译： 提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号 。 入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件， 基于信号处理的结果。 以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

公开(公告)号：US20060001051A1

公开(公告)日：2006-01-05

申请号：US11171219

申请日：2005-07-01

申请人： Mitsuharu Tai ,  Mutsuko Hatano ,  Yoichi Takahara ,  Hiroki Takahashi ,  Akio Yazaki ,  Takeshi Noda

发明人： Mitsuharu Tai ,  Mutsuko Hatano ,  Yoichi Takahara ,  Hiroki Takahashi ,  Akio Yazaki ,  Takeshi Noda

IPC分类号： H01L29/745 ,  H01L21/335

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78675

摘要： Agglomeration of a polycrystalline silicon film is eliminated at the time of obtaining a high quality polycrystalline silicon film by forming a silicon layer on an insulating film substrate and conducting long-term melting and re-crystallization. For this purpose, a layer or a plurality of layers of an underlayer UCL are provided on an insulating substrate GLS, the area near the surface in contact with a precursory silicon film PCF provided on this underlayer UCL is formed as an insulating film UCLP showing a film composition to improve the wettability of the melted silicon layer, and thereafter a high quality polycrystalline silicon film PSI is formed through elimination of agglomeration by melting of the precursory silicon film PCF using a laser beam LSR.

摘要翻译： 通过在绝缘膜基板上形成硅层并进行长期熔化和再结晶，在获得高质量的多晶硅膜时消除了多晶硅膜的聚集。 为此，在绝缘基板GLS上设置一层或多层下层UCL，在与该底层UCL上设置的前体硅膜PCF接触的表面附近的区域形成为绝缘膜UCLP， 膜组合物以提高熔融硅层的润湿性，然后通过使用激光束LSR熔化前体硅膜PCF消除聚集而形成高质量的多晶硅膜PSI。