Abstract:
To provide a game device that can reduce the size of the device and can execute the simulation of a match game scene based on an operation input by a game player.A field panel 9 imitating a field of a sporting event, card holding stages 10 that are arranged in the locations indicating the positions of players in the sporting event on the field panel 9, and holding card 11 in a raised state, a card information reading means for reading card information recorded on the cards 11 held by the card holding stages 10, and a game execution control means for controlling the execution of a game are provided. Further, the game execution control means includes a means for controlling, based on the card information read by the card information reading means, the execution of the simulation of the match game scene, which is displayed on the touch panel 6 based on the operation by the game player, to be a predetermined number of times that is set in advance.
Abstract:
A manufacturing method for an SOI semiconductor device includes creating transistors and an element isolation region on a semiconductor layer in an SOI substrate. The method also includes covering the transistors and the element isolation region with a first insulation film. The method also includes creating a first opening section which penetrates the first insulation film, element isolation region and a buried oxide film to expose the support substrate. The method also includes creating a first source interconnect, first drain interconnect and first gate interconnect which are electrically connected to the transistors, on the second insulation film. The method also includes forming dummy interconnects which are connected with these interconnects, and are electrically connected with the support substrate via the first opening section, on the second insulation film. The method also includes disconnecting the dummy interconnects to electrically insulate the first source interconnect, first drain interconnect and first gate interconnect from the support substrate.
Abstract:
A semiconductor device has an LSI device provided with a plurality of power supply line connection pads and ground line connection pad in a peripheral edge part of a circuit-formation surface, metal foil leads 5 electrically connected to each of the pads and adhered to the LSI device via an insulation layer, and decoupling capacitors mounted on one surface of the metal foil leads.
Abstract:
There are herein disclosed a raw material for a complex perovskite ceramic composition which is intended to uniformly disperse a trace amount of an addition component (manganese) therein, and a process for preparing the ceramic composition.A manganese-containing composite oxide is represented by the general formula (Mn.sub.a MeI.sub.1-a)MeII.sub.b O.sub.c wherein a is a value in the range of 0
Abstract translation:本文公开了用于均匀分散微量添加成分(锰)的复合钙钛矿陶瓷组合物的原料及其制备方法。 含锰复合氧化物由通式(MnaMeI-a)MeIIbOc表示,其中+ E,uns a + EE是在0 <+ E,uns a +EE≤0.3的范围内的值; MeI是Mg,Ni和Zn中的至少一种; MeII是Nb,Ta和W之一; 当MeII是Nb或Ta,+ E时,uns b + EE是2和+ E,uns c + EE是6,或者当MeII是W,+ E时,uns b + EE是1和+ E,uns c + EE 通过使用含有该含锰复合氧化物的原料,可以制备含Mn的复合钙钛矿化合物组合物,其含有Mn和至少一种由通式Pb(BIBII)表示的复合钙钛矿化合物, 其中BI是Mg,Ni和Zn之一; BII是Nb,Ta和W之一。
Abstract:
Method for producing printed circuit board using a photocurable resin laminate comprising a support and a photocurable resin layer disposed on one surface of said support, said photocurable resin layer having:(a) a viscosity of from 10.sup.4 to 5.times.10.sup.5 poises as measured at 90.degree. C.;(b) a thickness of from 30 to 150 .mu.m; and(c) an ultraviolet ray transmittance of from 40 to 95% with respect to ultraviolet rays having a wavelength of 365 nm.When this photocurable resin laminate is laminated under pressure on both surfaces of a metal-clad insulting base board having through-holes of an inner diameter smaller than 0.5 mm so that both surfaces of the metal-clad insulating base board are covered with the photocurable layer of the photocurable resin laminate, the photocurable resin layer intrudes locally in the inner side of the inner circumferential edge of both terminal openings of each through-hole and extends from the inner circumferential edge along and on the inner wall of the through-hole to a predetermined depth. By the light exposure of such a laminate structure and the subsequent development, both terminal openings of each through-hole can be completely covered with a photocured resin layer without occurrence of coverage failure, wherein a photocured resin layer adhering to the inner wall of the through-hole is formed in the through-hole from the inner circumferential edge of the terminal opening thereof along and on the inner wall of the through-hole.