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公开(公告)号：US08305553B2
公开(公告)日：2012-11-06
申请号：US11660209
申请日：2005-08-17
CPC分类号： G03F7/7085 , G03F7/70341
摘要： Provided is an exposure apparatus that is able to prevent liquid from remaining on a measuring part. An exposure apparatus comprises a measuring system (60), which has a first pattern (61) formed on the upper surface of a substrate stage, and a second area (S2) specified on the upper surface in the vicinity of a first area (S1), which includes the first pattern (61), and a second pattern (80) is formed in the second area (S2) so that the liquid (LQ) that has remained so as to span the first area (S1) and the second area (S2) retreats from the first area (S1) and collects in the second area (S2).
摘要翻译： 提供能够防止液体残留在测量部件上的曝光装置。 曝光装置包括测量系统（60），该测量系统具有形成在衬底台的上表面上的第一图案（61）和在第一区域附近的上表面上指定的第二区域（S2） ），其包括第一图案（61），并且在第二区域（S2）中形成第二图案（80），使得保持以跨越第一区域（S1）的液体（LQ）和第二图案 区域（S2）从第一区域（S1）退回并收集在第二区域（S2）中。
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42.发明授权Image plane measurement method, exposure method, device manufacturing method, and exposure apparatus 有权图像平面测量方法，曝光方法，装置制造方法和曝光装置公开(公告)号：US07965387B2
公开(公告)日：2011-06-21
申请号：US11658034
申请日：2005-07-21
申请人： Tsuneyuki Hagiwara
发明人： Tsuneyuki Hagiwara
IPC分类号： G01N21/00
CPC分类号： G03F7/70358 , G03F7/70666 , G03F9/7026 , G03F9/7034 , G03F9/7069 , G03F9/7088
摘要： A main controller moves a reticle stage in a scanning direction, illuminates an area on a reticle including a mark area in which predetermined marks are formed with illumination light, forms an aerial image of at least one mark existing in the mark area via a projection optical system, and measures the aerial image using an aerial image measuring unit. The main controller repeatedly performs such aerial image measurement while moving the reticle stage in the scanning direction. Then, the main controller computes a scanning image plane on which an image of a pattern formed on a reticle is formed by the projection optical system, based on the measurement result of the aerial image of each mark at each movement position. Based on the computation result, the main controller performs focus leveling control of a wafer during scanning exposure. Thus, highly accurate exposure is realized without using a sensor for reticle (mask) position measurement.
摘要翻译： 主控制器沿着扫描方向移动标线片台，照亮包含具有用照明光形成预定标记的标记区域的掩模版上的区域，经由投影光学形成存在于标记区域中的至少一个标记的空间图像 系统，并使用空中图像测量单元测量空中图像。 主控制器在沿着扫描方向移动标线片平台的同时重复执行这种空间图像测量。 然后，主控制器基于每个移动位置处的每个标记的空中图像的测量结果来计算由投影光学系统形成在掩模版上的图案的图像的扫描图像平面。 基于计算结果，主控制器在扫描曝光期间执行晶片的聚焦调平控制。 因此，在不使用用于掩模版（掩模）位置测量的传感器的情况下实现高度准确的曝光。
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公开(公告)号：US20090047607A1
公开(公告)日：2009-02-19
申请号：US11910224
申请日：2006-03-30
CPC分类号： G03F7/70341 , G03F7/706
摘要： A liquid immersion region (LR) is formed on a measuring member (65) by use of the liquid immersion mechanism (1), and measurement is performed by receiving measurement light through liquid (LQ) which forms the liquid immersion region (LR), in order to determine an exposure condition of a substrate (P). The substrate (P) is exposed by taking into account a difference between a pressure of the liquid (LQ) in the process of measurement and that in the process of exposure and a result of the measurement thus performed.
摘要翻译： 通过浸液机构（1）在测量部件（65）上形成液浸区域（LR），并且通过接收通过形成液浸区域（LR）的液体（LQ）的测量光进行测量， 以确定基板（P）的曝光条件。 通过考虑在测量过程中的液体（LQ）的压力与曝光过程中的压力之间的差异以及由此进行的测量结果而使基板（P）暴露。
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44.发明授权Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method 有权晶片平坦度评估方法，执行评估方法的晶片平整度评估装置，使用评估方法的晶片制造方法，使用评估方法的晶片质量保证方法，使用评估方法的半导体器件制造方法和使用由 评估方法公开(公告)号：US07365830B2
公开(公告)日：2008-04-29
申请号：US11710410
申请日：2007-02-26
申请人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
发明人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
CPC分类号： G01B21/30 , G01B11/306 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.
摘要翻译： 公开了一种晶片平坦度评估方法，其包括测量晶片的前后表面形状。 测量的晶圆正面分为几个部位。 然后，根据要评估的位置的位置选择平坦度计算方法，并获得晶片表面的平坦度。
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公开(公告)号：US20080068595A1
公开(公告)日：2008-03-20
申请号：US11576379
申请日：2005-09-30
申请人： Tsuneyuki Hagiwara
发明人： Tsuneyuki Hagiwara
IPC分类号： G01B9/00
CPC分类号： G03F7/7085 , G03F7/70591 , G03F7/70666 , G03F7/70683 , G03F7/70941
摘要： Light is irradiated on a light-shielding pattern on an object surface side of a projection optical system and light intensity distribution of the light having passed through the projection optical system and slits is detected while slits of an aerial image measuring unit on the image plane side of the projection optical system are moved within a plane perpendicular to the optical axis of the projection optical system. The information concerning the flare of the projection optical system is computed from the light intensity distribution, so that the influence of resist coated on a wafer used in a conventional exposing method can be eliminated, and highly accurate measurement of information concerning the flare can be realized. Further, measurement of information concerning the flare can be performed in a short time comparing to the exposing method because development process or the like of the wafer is not necessary.
摘要翻译： 光照射在投影光学系统的物体表面上的遮光图案上，并且检测到通过投影光学系统的光的光强度分布和狭缝，同时在像面侧的空间像测量单元的狭缝 的投影光学系统在垂直于投影光学系统的光轴的平面内移动。 根据光强分布计算关于投影光学系统的闪光的信息，可以消除涂覆在常规曝光方法中使用的晶片上的抗蚀剂的影响，并且可以实现关于闪光的信息的高精度测量 。 此外，由于不需要晶片的显影处理等，因此可以在与曝光方法相比较的短时间内进行关于闪光的信息的测量。
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公开(公告)号：US20060181690A1
公开(公告)日：2006-08-17
申请号：US11403922
申请日：2006-04-14
申请人： Hisashi Nishinaga , Ikuo Hikima , Mitsunori Toyoda , Masahiro Nakagawa , Tsuneyuki Hagiwara , Yasushi Mizuno , Naonori Kita , Osamu Tanitsu , Nozomu Emura
发明人： Hisashi Nishinaga , Ikuo Hikima , Mitsunori Toyoda , Masahiro Nakagawa , Tsuneyuki Hagiwara , Yasushi Mizuno , Naonori Kita , Osamu Tanitsu , Nozomu Emura
IPC分类号： G03B27/42
CPC分类号： G03F7/7015 , G03F7/70058 , G03F7/70341 , G03F7/706 , G03F7/7085
摘要： A part of exposure beam through a liquid via a projection optical system enters a light-transmitting section, enters an optical member without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.
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公开(公告)号：US20050019678A1
公开(公告)日：2005-01-27
申请号：US10897078
申请日：2004-07-23
CPC分类号： G03F1/60
摘要： A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.
摘要翻译： 选择光掩模空白基板用于至少掩模膜或相移膜沉积在光掩模坯料基板的顶表面上以形成光掩模坯料的方法中，将沉积的膜图案化以形成光掩模，并且 光掩模安装在曝光工具中。 通过在其上形成膜之前，当将光掩模安装在曝光工具中时，通过模拟衬底的顶表面中的形状变化来选择衬底; 在所述变化之前确定所述衬底顶表面的形状，当所述光掩模安装在所述曝光工具中时，所述形状将赋予所述顶表面平坦的形状; 并且选择具有该顶表面形状的基板作为可接受的基板。 所选择的基底具有优化的顶表面形状，其提高光掩模制造的生产率。
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公开(公告)号：US06381004B1
公开(公告)日：2002-04-30
申请号：US09672850
申请日：2000-09-29
IPC分类号： G03B2742
CPC分类号： G03F7/70358 , G03B27/42
摘要： In the case the first selection criteria is set, a plurality of detection points are selected to control the pitching and rolling of the wafer, whereas in the case the second selection criteria is set, priority is put to control the rolling on the wafer. The exposure apparatus has a selection unit to choose between these criteria, and on scanning exposure the controller adjusts the wafer position in the optical axis direction, pitching, rolling or the wafer position in the optical axis direction and rolling according to the selection criteria. Accordingly, by precisely adjusting the wafer surface position in the optical axis direction and rolling that greatly affects defocus, the critical dimension variation by a macroscopic observation, which is caused by defocus, can be prevented. Moreover, by performing an alternate scanning on the entire shot area including shot areas to be exposed on the circumferential portion, throughput can be maintained extremely high.
摘要翻译： 在设定了第一选择标准的情况下，选择多个检测点来控制晶片的俯仰和滚动，而在设定了第二选择标准的情况下，优先考虑控制晶片上的滚动。 曝光装置具有选择单元，在这些标准之间进行选择，并且在扫描曝光时，控制器根据选择标准调整在光轴方向上的晶片位置，俯仰，滚动或光轴方向上的晶片位置。 因此，通过精确地调整光轴方向的晶片表面位置和大大影响散焦的滚动，可以防止由散焦引起的通过宏观观察的临界尺寸变化。 此外，通过在包括要在周向部分上露出的拍摄区域的整个拍摄区域上执行交替扫描，可以非常高地保持通过量。
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49.发明授权Optical detection system for detecting defects and/or particles on a substrate 失效用于检测衬底上的缺陷和/或颗粒的光学检测系统
公开(公告)号：US5907396A
公开(公告)日：1999-05-25
申请号：US934454
申请日：1997-09-19
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66 , G01N21/00
CPC分类号： G01N21/94
摘要： An optical detection system capable of detecting even small particles or defects on a specimen such as a mask with high sensitivity and being unaffected by diffracted light from the edges of the pattern even when inspecting a thick specimen. The optical detection system includes a light emission means for illuminating a pattern surface on the specimen with light, a first light reception optical system placed on the pattern surface side of the specimen for receiving scattered light emanating from the pattern surface, a second light reception optical system placed on the glass side of the specimen in symmetry with the first light reception optical system relative to the pattern surface for receiving scattered light emanating from the pattern surface through the specimen and a corrective optical element for correcting for differences in the aberration states of the first and second light reception optical systems.
摘要翻译： 光学检测系统即使在检查厚样品时，也能够高灵敏度地检测诸如掩模的样品上的甚至小的颗粒或缺陷，并且不受来自图案的边缘的衍射光的影响。 光学检测系统包括用光照射样本上的图案表面的发光装置，放置在样本的图案表面侧的第一光接收光学系统，用于接收从图案表面发出的散射光，第二光接收光 系统相对于图案表面放置在与第一光接收光学系统对称的样本的玻璃面上，用于接收从图案表面通过样本发出的散射光;以及校正光学元件，用于校正色差状态的差异 第一和第二光接收光学系统。
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公开(公告)号：US5680207A
公开(公告)日：1997-10-21
申请号：US638446
申请日：1996-04-26
申请人： Tsuneyuki Hagiwara
发明人： Tsuneyuki Hagiwara
CPC分类号： G01N21/88 , G01N21/8806 , G01N21/94
摘要： A defect inspecting apparatus and a defect inspecting method are provided to conduct discriminating detection of minute circuit patterns and foreign particles as well as to detect defectives on the surface of a substrate with a high precision. The beams from a laser light source are converged by a lens to be incident upon an inspecting point. The light emitted from the inspecting point by the incident beam is detected by a photoreceiver. On the light receiving surface of the photoreceiver, a plurality of light receiving areas are provided. Each of the light receiving areas has longitudinal direction and shorter direction on its positively projected view. The arrangement of the light receiving areas is selected in accordance with the arrangement information of the patterns formed on the substrate. The foreign particles and the patterns are distinguished by obtaining the logical product of the output signals from the selected light receiving area.
摘要翻译： 提供缺陷检查装置和缺陷检查方法以进行微小电路图案和异物的鉴别检测，以及以高精度检测基板表面上的缺陷。 来自激光光源的光束由透镜会聚以入射到检查点。 由入射光束从检查点发射的光由光接收器检测。 在光接收器的光接收表面上设置有多个光接收区域。 每个光接收区域在其正投影视图上具有纵向方向和较短方向。 根据形成在基板上的图案的配置信息来选择光接收区域的布置。 通过获得来自所选择的光接收区域的输出信号的逻辑积来区分外来粒子和图案。
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