Fluoropolymer emulsions
    42.
    发明授权
    Fluoropolymer emulsions 有权
    含氟聚合物乳液

    公开(公告)号:US08314037B2

    公开(公告)日:2012-11-20

    申请号:US12268470

    申请日:2008-11-11

    Abstract: A fluoropolymer composition comprising monomers copolymerized in the following percentages by weight: (a) from about 20% to about 95% of a fluoroalkyl monomer, or mixture of monomers, (b) from about 5% to about 80% of at least one of: (i) an alkyl (meth)acrylate monomer having a linear, branched or cyclic alkyl group of from about 6 to about 18 carbons; or (ii) one or more ionizable water solvatable monomers; and (c) from about 0.05% to about 2% non-fluorinated polymerizable nanoparticles.

    Abstract translation: 一种含氟聚合物组合物,其包含按以下重量百分比共聚的单体:(a)约20%至约95%的氟烷基单体或单体混合物,(b)约5%至约80% :(i)具有约6至约18个碳原子的直链,支链或环状烷基的(甲基)丙烯酸烷基酯单体; 或(ii)一种或多种可离子化的水可溶性单体; 和(c)约0.05%至约2%的非氟化可聚合纳米颗粒。

    METHOD AND APPARATUS FOR REALIZING INTEGRITY PROTECTION
    43.
    发明申请
    METHOD AND APPARATUS FOR REALIZING INTEGRITY PROTECTION 审中-公开
    实现完整性保护的方法和装置

    公开(公告)号:US20120289220A1

    公开(公告)日:2012-11-15

    申请号:US13520562

    申请日:2011-01-04

    Applicant: Yi Yang Ying Wang

    Inventor: Yi Yang Ying Wang

    CPC classification number: H04L63/123 H04W12/10 H04W76/12 H04W84/047

    Abstract: Provided in the present invention are a method, an apparatus and a system for realizing integrity protection. The method includes the following steps: a relay node (RN) receives a message, from a base station, carrying integrity protection information; the RN provides integrity protection for the transmitted data according to the integrity protection information. The embodiments of the present invention can provide integrity protection for the data that requires the integrity protection, especially for S1-AP messages and X2-AP messages.

    Abstract translation: 在本发明中提供了一种用于实现完整性保护的方法,装置和系统。 该方法包括以下步骤:中继节点(RN)从基站接收携带完整性保护信息的消息; RN根据完整性保护信息为传输的数据提供完整性保护。 本发明的实施例可以为需要完整性保护的数据提供完整性保护,特别是对于S1-AP消息和X2-AP消息。

    Electronic device including phenanthroline derivative
    44.
    发明授权
    Electronic device including phenanthroline derivative 失效
    电子器件包括菲咯啉衍生物

    公开(公告)号:US08309731B2

    公开(公告)日:2012-11-13

    申请号:US13299845

    申请日:2011-11-18

    Abstract: There is provided an organic electronic device having an anode, a hole injection layer, a photoactive layer, an electron transport layer, and a cathode. At least one of the photoactive layer and the electron transport layer includes a compound having Formula I where: R1 is the same or different and can be phenyl, biphenyl, naphthyl, naphthylphenyl, triphenylamino, or carbazolylphenyl; and one of the following conditions is met: (i) R2=R3 and is H, phenyl, biphenyl, naphthyl, naphthylphenyl, arylanthracenyl, phenanthryl, triphenylamino, or carbazolylphenyl; or (ii) R2 is H or phenyl; and R3 is phenyl, biphenyl, naphthyl, naphthylphenyl, arylanthracenyl, phenanthryl, triphenylamino, and carbazolylphenyl; When both R1 are phenyl, R2 and R3 can be 2-naphthyl, naphthylphenyl, arylanthracenyl, 9-phenanthryl, triphenylamino, or m-carbazolylphenyl.

    Abstract translation: 提供了具有阳极,空穴注入层,光活性层,电子传输层和阴极的有机电子器件。 光活性层和电子传输层中的至少一个包括具有式I的化合物,其中:R 1相同或不同,可以是苯基,联苯基,萘基,萘基苯基,三苯基氨基或咔唑基苯基; 满足以下条件之一:(i)R2 = R3,为H,苯基,联苯基,萘基,萘基苯基,芳基蒽基,菲基,三苯基氨基或咔唑基苯基; 或(ii)R 2为H或苯基; 联苯基,萘基,萘基苯基,芳基蒽基,菲基,三苯基氨基和咔唑基苯基; 当R 1都是苯基时,R 2和R 3可以是2-萘基,萘基苯基,芳基蒽基,9-菲基,三苯基氨基或间 - 咔唑基苯基。

    SCHOTTKY DIODE WITH HIGH ANTISTATIC CAPABILITY
    49.
    发明申请
    SCHOTTKY DIODE WITH HIGH ANTISTATIC CAPABILITY 有权
    肖特基二极管具有高抗静电能力

    公开(公告)号:US20120205770A1

    公开(公告)日:2012-08-16

    申请号:US13186494

    申请日:2011-07-20

    CPC classification number: H01L29/872 H01L29/8611

    Abstract: A Schottky diode with high antistatic capability has an N− type doped drift layer formed on an N+ type doped layer. The N− type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N− type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N− type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

    Abstract translation: 具有高抗静电能力的肖特基二极管具有形成在N +型掺杂层上的N型掺杂漂移层。 N型掺杂漂移层具有形成有保护环的表面。 保护环内部是P型掺杂区域。 N型掺杂漂移层表面还形成有氧化物层和金属层。 金属层和N型掺杂漂移层和P型掺杂区域之间的接触区域形成肖特基接触。 P型掺杂区域具有低浓度下层和高浓度上层,使得P型掺杂区域中的表面离子浓度高。 因此,肖特基二极管具有降低正向压降和高抗静电能力的优点。

    Pyridone GPR119 G protein-coupled receptor agonists
    50.
    发明授权
    Pyridone GPR119 G protein-coupled receptor agonists 有权
    吡啶酮GPR119 G蛋白偶联受体激动剂

    公开(公告)号:US08232404B2

    公开(公告)日:2012-07-31

    申请号:US13159497

    申请日:2011-06-14

    CPC classification number: C07D401/12 C07D401/14

    Abstract: Novel compounds are provided which are GPR119 G protein-coupled receptor modulators. GPR119 G protein-coupled receptor modulators are useful in treating, preventing, or slowing the progression of diseases requiring GPR119 G protein-coupled receptor modulator therapy. These novel compounds have the structure Formula I or Formula IA.

    Abstract translation: 提供了新的化合物,它们是GPR119G蛋白偶联受体调节剂。 GPR119 G蛋白偶联受体调节剂可用于治疗,预防或减缓需要GPR119 G蛋白偶联受体调节剂治疗的疾病进展。 这些新化合物具有结构式I或式IA。

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