公开(公告)号：US20170229303A1

公开(公告)日：2017-08-10

申请号：US15496420

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO

IPC: H01L21/02 ,  B08B7/04 ,  B08B7/00

CPC classification number: H01L21/02661 ,  B08B5/00 ,  B08B7/0035 ,  B08B7/0071 ,  B08B7/04 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/67115

Abstract: Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.

公开(公告)号：US20170148918A1

公开(公告)日：2017-05-25

申请号：US15350967

申请日：2016-11-14

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan YE ,  Xinyu BAO ,  Errol Antonio C. SANCHEZ ,  Xuebin LI

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L29/08

CPC classification number: H01L29/7849 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/0847 ,  H01L29/24 ,  H01L29/66477

Abstract: The present disclosure generally relate to methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed germanium arsenic layer. The method includes heating a substrate disposed within a processing chamber, wherein the substrate comprises silicon, and exposing a surface of the substrate to a germanium-containing gas and an arsenic-containing gas to form a germanium arsenic alloy having an arsenic concentration of 4.5×1020 atoms per cubic centimeter or greater on the surface.

公开(公告)号：US20170133224A1

公开(公告)日：2017-05-11

申请号：US15277394

申请日：2016-09-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/66742 ,  H01L21/02057 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/8252 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/78681 ,  H01L29/78696

Abstract: Embodiments described herein generally relate to methods and structures for forming precise fins comprising Group III-V elements on a silicon substrate. A buffer layer is deposited in a trench formed in the dielectric material on a substrate. An isolation layer is then deposited over the buffer layer. A portion of the isolation layer is removed allowing for a precisely sized Group III-V channel layer to be deposited on the isolation layer.

公开(公告)号：US20160126322A1

公开(公告)日：2016-05-05

申请号：US14918604

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan YE ,  Xinyu BAO ,  Errol Antonio C. SANCHEZ ,  David K. CARLSON ,  Keun-Yong BAN

IPC: H01L29/205 ,  H01L21/02

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02587 ,  H01L21/0262

Abstract: Embodiments of the present disclosure generally relate to a film stack including layers of group III-V semiconductor materials. The film stack includes a phosphorous containing layer deposited over a silicon substrate, a GaAs containing layer deposited on the phosphorous containing layer, and an aluminum containing layer deposited on the GaAs containing layer. The GaAs containing layer between the phosphorous containing layer and the aluminum containing layer improves the surface smoothness of the aluminum containing layer.

Abstract translation: 本公开的实施例一般涉及包括III-V族III族半导体材料层的薄膜叠层。 膜叠层包括沉积在硅衬底上的含磷层，沉积在含磷层上的含GaAs层，以及沉积在含砷层上的含铝层。 含磷层和含铝层之间的含砷化物层提高了含铝层的表面光滑度。

公开(公告)号：US20160035562A1

公开(公告)日：2016-02-04

申请号：US14445410

申请日：2014-07-29

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON

IPC: H01L21/02 ,  H01L29/161 ,  H01L21/311 ,  H01L29/16

CPC classification number: H01L21/02046 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

Abstract: A method for cleaning a substrate, such as a silicon substrate, a silicon-germanium substrate, or other silicon-containing substrate is disclosed. The method includes exposing the substrate to a first plasma configured to attack a sub-oxide on the substrate. The method also includes exposing the substrate to a second plasma configured to attack the native oxide on the substrate. The method further includes exposing the substrate to a gas containing at least one of molecular chlorine or a chlorine compound. The gas may be configured to remove at least some of the remaining native oxide and sub-oxide. After the cleaning process, the substrate may be further processed. Further processing steps may include, for example, an epitaxial growth process. An epitaxial growth process performed on a substrate cleaned according to the methods disclosed herein will exhibit few defects.

Abstract translation: 公开了一种用于清洁诸如硅衬底，硅锗衬底或其它含硅衬底的衬底的方法。 该方法包括将衬底暴露于构造成攻击衬底上的次氧化物的第一等离子体。 该方法还包括将衬底暴露于配置成攻击衬底上的自然氧化物的第二等离子体。 该方法还包括将基底暴露于含有分子氯或氯化合物中的至少一种的气体。 气体可以被配置为去除至少一些剩余的天然氧化物和亚氧化物。 在清洁处理之后，可以进一步处理基板。 另外的处理步骤可以包括例如外延生长工艺。 在根据本文公开的方法清洁的基底上进行的外延生长工艺将显示出很少的缺陷。

公开(公告)号：US20140159112A1

公开(公告)日：2014-06-12

申请号：US14100720

申请日：2013-12-09

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Errol Antonio C. SANCHEZ ,  David K. CARLSON ,  Zhiyuan YE

IPC: H01L21/02 ,  H01L29/267

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/0262 ,  H01L21/02694 ,  H01L29/267 ,  Y10T117/1008

Abstract: A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.

Abstract translation: 一种在硅衬底上形成保形III / V层的方法，其上形成有III / V层的所得衬底。 该方法包括从衬底去除原生氧化物，将衬底定位在处理室内，将衬底加热至第一温度，将衬底冷却至第二温度，将III族前体流入处理室，保持第二温度，同时 将III族前体和V族前体流入处理室，直到形成共形层，同时停止III族前体的流动，将处理室加热至退火温度，并将处理室冷却至第二温度。 可以通过使用优先蚀刻电介质区域的卤化物气蚀刻来选择性地制备III / V层的沉积。