摘要:
A semiconductor device or a semiconductor integrated circuit includes a field effect transistor having a source region, a drain region and a channel regions formed within a semiconductor substrate. A lower wiring is formed on the semiconductor substrate to form a gate electrode and its extension and oxidized to form an oxide film covering the lower wiring. An upper wiring is formed over the lower wiring on the semiconductor substrate to make contact with the drain or source region. The lower wiring is electrically insulated from the upper wiring by the oxide film.
摘要:
A display device with over voltage protection circuits having zener diode characteristics. The protection circuits have pairs of TFTs connected to resistive dividers. Each resistive divider provide the voltage set levels for one direction of overvoltage application.
摘要:
A grey tone display and a driving method are described. The display comprises a light influencing layer, and electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected to the electrode pad at its source terminal, a p-channel field effect transistors connected to the electrode pad at its source terminal, a first control line connected to the drain terminal of the n-channel field effect transistor, a second control line connected to the drain terminal of the p-channel field effect transistor, a third control line connected to the gate terminals of the n-channel field effect transistor and the p-channel field effect transistor, and a control circuit for supplying control signals to the first, second and third control lines. By this configuration, the voltage of the electrode pad can be arbitrarily controlled by adjusting the input level at the gate terminals.
摘要:
An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.
摘要:
A liquid crystal display is provided having pressure detection ability. An information input can be implemented by directly touching the display which has presented an image. The pressure detection is performed by means of the liquid crystal material which is also provided for use in a displaying operation. In the method of operation, the displaying and pressure operations are carried out alternately.
摘要:
An improved liquid crystal device for display is disclosed. The device is comprised of a pair of substrates on whose insides a number of electrode strips are formed in a matrix. The electrode strips are formed also near the periphery portions of the substrates which are unnecessary for the pixels of the display. By virtue of the excess electrode strips, joining the substrates can be done without special attention to the coincidence of the substrates.
摘要:
A new type of pressure sensor is disclosed here. The sensor is composed of a pair of glass substrates and a ferroelectric liquid crystal which is interposed between the substrates and exhibits piezoelectric effect. Because of crystalline property in liquid phase, the piezoelectric medium can be easily disposed and aligned between the substrates in light of the orientation of the surface contiguous to the liquid crystal layer.
摘要:
An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.
摘要:
A novel structure of an active display device is disclosed. The device is characterized as having at least one display device comprising a substrate having an insulated surface with at least one thin film transistor (TFT) formed over the substrate and a gate insulating film and gate electrode adjacent to the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. In one embodiment, an interlayer insulating film covers the TFT and an aluminum lead electrode is formed over the interlayer insulating layer that is electrically connected to one of the source or drain regions of the TFT through a hole of the interlayer insulating film. In another embodiment of the invention the first and second holes of the interlayer insulating layer do not overlap. In a preferred embodiment, an organic resin film, with a pixel electrode form thereover, is formed over the thin film transistor, the interlayer insulating film and the lead electrode is provide a leveled upper surface. The pixel electrode is electrically connected to the TFT via the lead electrode. The present invention is applicable with any device with a display, such as a television or a personal computer.
摘要:
An electro-optical device comprising a display drive system with the display timing related to the unit time t for writing-in a picture element and to the time F for writing-in one picture is disclosed. In the device, a gradated display corresponding to the ratio of the division can be obtained by time-sharing the signal during a write-in of time t without changing the time F.