中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

50 records (took 0.032 seconds)

    Surface topography measurement apparatus and method
    41.
    发明授权
    Surface topography measurement apparatus and method 有权

    公开(公告)号：US11604151B2

    公开(公告)日：2023-03-14

    申请号：US17747639

    申请日：2022-05-18

    Applicant: Applied Materials, Inc.

    Inventor： Weimin Li ,  Wen Xiao ,  Vibhu Jindal ,  Sanjay Bhat

    IPC: G01N21/956 ,  G03F7/20 ,  G03F1/24

    Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

    Physical vapor deposition system and processes
    42.
    发明授权
    Physical vapor deposition system and processes 有权

    公开(公告)号：US11599016B2

    公开(公告)日：2023-03-07

    申请号：US17552513

    申请日：2021-12-16

    Applicant: Applied Materials, Inc.

    Inventor： Vibhu Jindal ,  Wen Xiao ,  Sanjay Bhat

    IPC: G03F1/24

    Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

    System and method to control PVD deposition uniformity
    43.
    发明授权
    System and method to control PVD deposition uniformity 有权

    公开(公告)号：US11557473B2

    公开(公告)日：2023-01-17

    申请号：US16850670

    申请日：2020-04-16

    Applicant: Applied Materials, Inc.

    Inventor： Wen Xiao ,  Vibhu Jindal ,  Sanjay Bhat

    IPC: H01L21/02 ,  H01L21/68 ,  H01L21/687

    Abstract: A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.

    Process Kit Conditioning Chamber
    45.
    发明申请
    Process Kit Conditioning Chamber 有权

    公开(公告)号：US20220189749A1

    公开(公告)日：2022-06-16

    申请号：US17120721

    申请日：2020-12-14

    Applicant: Applied Materials, Inc.

    Inventor： Ribhu Gautam ,  Vibhu Jindal ,  Kamatchi Gobinath Manoharan ,  Sanjay Bhat ,  Praveen Kumar Choragudi ,  Wen Xiao ,  Vinodh Ramachandran

    IPC: H01J37/32 ,  C23C14/34

    Abstract: An ex situ physical vapor deposition (PVD) process kit conditioning apparatus configured to condition process kit components of a PVD substrate processing chamber, the ex situ PVD process kit conditioning apparatus comprising a chamber assembly, a central cathode assembly configured to mount one or more targets. The apparatus is configured to receive one or more components of a process kit of a PVD substrate processing chamber and the central cathode assembly is positioned and configured so that the apparatus deposits the defect reduction coating substantially uniformly on an inner surface of a process kit component of the PVD substrate processing chamber.

    Surface Topography Measurement Apparatus And Method
    47.
    发明申请
    Surface Topography Measurement Apparatus And Method 有权

    公开(公告)号：US20220170866A1

    公开(公告)日：2022-06-02

    申请号：US17106555

    申请日：2020-11-30

    Applicant: Applied Materials, Inc.

    Inventor： Weimin Li ,  Wen Xiao ,  Vibhu Jindal ,  Sanjay Bhat

    IPC: G01N21/956 ,  G03F1/24 ,  G03F7/20

    Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

Patent Agency Ranking