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    Thin film transistor and array substrate each having active layer comprising multiple oxide layers arranged in a stack
    41.
    发明授权
    Thin film transistor and array substrate each having active layer comprising multiple oxide layers arranged in a stack 有权

    公开(公告)号：US12300753B2

    公开(公告)日：2025-05-13

    申请号：US17780877

    申请日：2021-05-27

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

    IPC: H01L29/786 ,  H01L27/12

    Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

    Thin film transistor having a semiconductor layer comprising a plurality of semiconductor branches
    42.
    发明授权
    Thin film transistor having a semiconductor layer comprising a plurality of semiconductor branches 有权

    公开(公告)号：US12230683B2

    公开(公告)日：2025-02-18

    申请号：US17755380

    申请日：2021-05-19

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Lizhong Wang ,  Ce Ning ,  Hehe Hu ,  Tianmin Zhou ,  Jipeng Song

    IPC: H01L29/786 ,  H01L29/417

    Abstract: The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.

    Array substrate, flat panel detector, and method for manufacturing array substrate
    43.
    发明授权
    Array substrate, flat panel detector, and method for manufacturing array substrate 有权

    公开(公告)号：US12068355B2

    公开(公告)日：2024-08-20

    申请号：US17410677

    申请日：2021-08-24

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Kun Zhao

    IPC: H01L27/146 ,  H01L27/12

    CPC classification number: H01L27/14643 ,  H01L27/1214 ,  H01L27/14689

    Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

    Thin Film Transistor and Manufacturing Method Thereof, and Array Substrate and Electronic Device
    46.
    发明申请
    Thin Film Transistor and Manufacturing Method Thereof, and Array Substrate and Electronic Device 有权

    公开(公告)号：US20230015871A1

    公开(公告)日：2023-01-19

    申请号：US17780877

    申请日：2021-05-27

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

    IPC: H01L29/786 ,  H01L27/12

    Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

    Thin film transistor and method for fabricating the same, array substrate and display device
    47.
    发明授权
    Thin film transistor and method for fabricating the same, array substrate and display device 有权

    公开(公告)号：US11289513B2

    公开(公告)日：2022-03-29

    申请号：US16074282

    申请日：2018-01-19

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Ke Wang ,  Hehe Hu ,  Xinhong Lu

    IPC: H01L27/12

    Abstract: A thin film transistor and a method for fabricating the same, an array substrate and a display device are provided. The thin film transistor includes an active layer and a protective layer being provided on and in direct contact with the active layer, the protective layer is provided corresponding to a channel region of the thin film transistor; the protective layer is made of an oxygen-enriched metallic oxide insulation material which will not introduce any new element into the active layer. In the thin film transistor and the method for fabricating the same, the array substrate and the display device provided by the present disclosure, the active layer can be protected from being damaged by the etchant for forming the source/drain, and no new element will be introduced into the active layer; thus the characteristics and the stability of the thin film transistor is improved.

    Array substrate and manufacturing method thereof, and display device
    49.
    发明授权
    Array substrate and manufacturing method thereof, and display device 有权

    公开(公告)号：US11133363B2

    公开(公告)日：2021-09-28

    申请号：US16556342

    申请日：2019-08-30

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Ke Wang ,  Xinhong Lu ,  Hehe Hu ,  Wei Yang ,  Ce Ning

    IPC: H01L27/32 ,  H01L27/12 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

    Abstract: The present discloses an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a first transistor and a second transistor. The first transistor includes a first active layer, a first gate, a first source and a first drain. The second transistor includes a second active layer, a second gate, a second source and a second drain. An orthographic projection of the second source on the base substrate and an orthographic projection of the second drain on the base substrate at least partially overlap. One of the second source and the second drain is in the same layer as and made from the same material as the first gate. The first source and the first drain are in the same layer as and made from the same material as the other of the second source and the second drain.

    Display panel and manufacturing method thereof, driving method and display device
    50.
    发明授权
    Display panel and manufacturing method thereof, driving method and display device 有权

    公开(公告)号：US11092866B2

    公开(公告)日：2021-08-17

    申请号：US16631331

    申请日：2019-07-18

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Hehe Hu ,  Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu

    IPC: G02F1/1368 ,  G02F1/1362

    Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.

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