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198 条记录 (耗时 0.033 秒)

    Molecular level, precision control over the interfacial properties of high-T.sub.C superconductor structures and devices
    43.
    发明授权
    Molecular level, precision control over the interfacial properties of high-T.sub.C superconductor structures and devices 失效
    分子水平，精密控制高TC超导体结构和器件的界面特性

    公开(公告)号：US5846909A

    公开(公告)日：1998-12-08

    申请号：US445598

    申请日：1995-05-22

    申请人： John T. McDevitt ,  Chad A. Mirkin

    发明人： John T. McDevitt ,  Chad A. Mirkin

    IPC分类号： H01L39/24 ,  H01L39/00

    CPC分类号： B82Y30/00 ,  H01L39/247 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/704 ,  Y10T428/261 ,  Y10T428/268

    摘要： Use of monolayer films for the direct modification of high-T.sub.c superconductor structures and devices. Methods for the formation of superconductor localized monolayer films have been discovered based on the spontaneous adsorption of molecules containing ligating functionalities, such as alkylamine, arylamine, and alkylthiol moieties. Molecules containing these types of functionalities are found to bind tenaciously to the metal ions which form the high-T.sub.c superconductor surface. The derivatized superconductor structures can be prepared simply by soaking the high-T.sub.c, superconductor structure or device in a dry organic solvent system which contains the derivatizing agent. Large changes in the superconductor interfacial properties can be achieved with such procedures allowing for the atomic level control of the surface properties of the superconductor. This discovery is particularly important to provide a) new methods to fabricate superconductor devices with atomic level precision, b) to form defect-free anti-corrosion layers, c) improved/optimized methods for lithographic processing of high-T.sub.c devices, and d) improved adhesion of protective layers by surface-modification.

    摘要翻译： 使用单层膜直接改性高Tc超导体结构和器件。 已经基于含有连接官能团的分子的自发吸附（例如烷基胺，芳基胺和烷基硫醇部分）发现形成超导体局部单层膜的方法。 发现含有这些类型功能的分子与形成高Tc超导体表面的金属离子牢固结合。 衍生的超导体结构可以简单地通过将高Tc，超导体结构或器件浸入含有衍生剂的干燥有机溶剂体系中来制备。 可以通过这样的方法实现超导体界面特性的大的变化，从而允许超导体表面性质的原子水平控制。 这一发现对于提供a）用于制造具有原子级精度的超导体器件的新方法特别重要，b）形成无缺陷的防腐蚀层，c）用于高Tc器件的光刻处理的改进/优化方法，以及d） 通过表面改性改善保护层的附着力。

    Beam pen lithography
    45.
    发明授权
    Beam pen lithography 有权
    光笔光刻

    公开(公告)号：US09021611B2

    公开(公告)日：2015-04-28

    申请号：US13202142

    申请日：2010-02-18

    申请人： Chad A. Mirkin ,  Gengfeng Zheng ,  Fengwei Huo

    发明人： Chad A. Mirkin ,  Gengfeng Zheng ,  Fengwei Huo

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2051 ,  G03F7/70291 ,  G03F7/70383 ,  G03F7/70466 ,  G03F7/70525 ,  G03F7/70958

    摘要： The disclosure relates to methods of beam pen lithography using a tip array having a plurality of transparent, elastomeric, reversibly-deformable tips coated with a blocking layer and apertures defined in the blocking layer to expose tip ends of the tips in the array. The tip array can be used to perform a photolithography process in which the tips are illuminated with a radiation that is channeled through the tips and out the apertures to expose a photosensitive substrate. Also disclosed are tip arrays formed of polymers and gels, apparatus including the tip arrays and radiation sources, and related apparatus for selectively masking tips in the tip array from radiation emitted from the radiation source.

    摘要翻译： 本公开涉及使用具有多个透明，弹性，可逆变形的尖端的尖端阵列的光笔笔光刻方法，所述尖端涂覆有阻挡层和限定在阻挡层中的孔，以暴露阵列中尖端的尖端。 尖端阵列可以用于执行光刻工艺，其中尖端被通过尖端引导的辐射照射并且出射孔以暴露感光基底。 还公开了由聚合物和凝胶形成的尖端阵列，包括尖端阵列和辐射源的装置以及用于从辐射源发射的辐射中选择性地遮蔽尖端阵列中的尖端的相关装置。

    Force feedback leveling of tip arrays for nanolithography
    47.
    发明授权
    Force feedback leveling of tip arrays for nanolithography 有权
    用于纳米光刻的尖端阵列的力反馈调平

    公开(公告)号：US08745761B2

    公开(公告)日：2014-06-03

    申请号：US12960439

    申请日：2010-12-03

    申请人： Chad A. Mirkin ,  Xing Liao ,  Adam B. Braunschweig

    发明人： Chad A. Mirkin ,  Xing Liao ,  Adam B. Braunschweig

    IPC分类号： G01L1/06 ,  G01N13/16 ,  B05D3/12

    CPC分类号： G03F7/0002

    摘要： A method of leveling a polymer pen array includes contacting a pen array with a surface and measuring a total force exerted on the surface by the pen array, the pen array being disposed at a first angle with respect to a first axis of the surface and a second angle with respect to a second axis of the surface; tilting one or both of the pen array and the surface to vary the first and second angles of the pen array with respect to the surface; measuring the total force exerted by the tilted pen array on the surface; and repeating the tilting and measuring steps until a global maximum of the total force exerted on the surface by the pen array is measured, thereby determining first and second angles which correspond to a leveled position of the pen array with respect to the surface.

    摘要翻译： 调整聚合物笔阵列的方法包括使笔阵列与表面接触并且通过笔阵列测量施加在表面上的总力，笔阵列相对于表面的第一轴线以第一角度设置， 相对于表面的第二轴线的第二角度; 倾斜笔阵列和表面中的一个或两个以改变笔阵列相对于表面的第一和第二角度; 测量由倾斜笔阵列施加在表面上的总力; 并且重复倾斜和​​测量步骤，直到测量由笔阵列施加在表面上的总力的全局最大值，从而确定对应于笔阵列相对于表面的调平位置的第一和第二角度。

    MASSIVELY PARALLEL LITHOGRAPHY WITH TWO-DIMENSIONAL PEN ARRAYS
    49.
    发明申请
    MASSIVELY PARALLEL LITHOGRAPHY WITH TWO-DIMENSIONAL PEN ARRAYS 审中-公开
    具有两维笔阵列的大规模并行平版印刷

    公开(公告)号：US20120297509A1

    公开(公告)日：2012-11-22

    申请号：US13530006

    申请日：2012-06-21

    申请人： Chad A. Mirkin ,  Khalid Salaita ,  Yuhuang Wang ,  Joseph S. Fragala ,  Raymond R. Shile

    发明人： Chad A. Mirkin ,  Khalid Salaita ,  Yuhuang Wang ,  Joseph S. Fragala ,  Raymond R. Shile

    IPC分类号： G01Q70/16 ,  B82Y40/00

    CPC分类号： G03F7/0002

    摘要： Massive parallel printing of structures and nanostructures at high speed with high resolution and high quality using two dimensional arrays comprising cantilevers and tip-based transfer of material to a surface. The array is designed so only tips touch the surface. This can be accomplished by long tips and bent cantilevers and alignment. An article comprising: a two-dimensional array of a plurality of cantilevers, wherein the array comprises a plurality of base rows, each base row comprising a plurality of cantilevers, wherein each of the cantilevers comprise tips at the cantilever end away from the base, wherein the number of cantilevers is greater than 250, and wherein the tips have an apex height relative to the cantilever of at least four microns, and a support for the array. Combinatorial arrays and bioarrays can be prepared. The arrays can be manufactured by micromachining methods.

    摘要翻译： 以高分辨率和高质量高结构和纳米结构的大规模平行印刷，使用二维阵列，其包括悬臂和基于尖端的材料转移到表面。 该阵列设计为只有尖端触摸表面。 这可以通过长尖端和弯曲的悬臂和对准来实现。 一种制品，包括：多个悬臂的二维阵列，其中所述阵列包括多个基列，每个基列包括多个悬臂，其中每个所述悬臂包括远离所述基座的所述悬臂端处的尖端， 其中所述悬臂的数量大于250，并且其中所述尖端具有相对于至少四微米的所述悬臂的顶点高度，以及所述阵列的支撑。 可以制备组合阵列和生物阵列。 阵列可以通过微加工方法制造。